Abstract: This invention relates in part to a method for preparing a pressure vessel for receiving high purity acetylene at elevated pressure. The method involves providing a porous filler-containing pressure vessel, deep cleaning the porous filler-containing pressure vessel, purifying a solvent, and charging the purified solvent into the deep cleaned, porous filler-containing pressure vessel. The pressure vessel is then charged with high purity acetylene for storage, transport and/or delivery of the high purity acetylene. The high purity acetylene may be useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.

Abstract: This invention is directed to various protocols for reprocessing off-spec gas to produce a concentration of off-spec gases to a desired target concentration. A combination of source gases is blended with the off-spec gas. This technique has the effect of enabling relatively small adjustments to the concentration of off-spec gas. Processes are also described that incorporate the blending protocols.

Abstract: This invention relates in part to a process for producing high purity acetylene by withdrawing a crude acetylene stream from a storage source, and passing said stream through an adsorbent bed that contains layered adsorption media to selectively remove moisture, solvent and carbon dioxide from the stream, thereby producing the high purity acetylene. The adsorption media is regenerated in-situ. The high purity acetylene product is useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.

Abstract: This invention relates in part to a method for preparing a pressure vessel for receiving high purity acetylene at elevated pressure. The method involves providing a porous filler-containing pressure vessel, deep cleaning the porous filler-containing pressure vessel, purifying a solvent, and charging the purified solvent into the deep cleaned, porous filler-containing pressure vessel. The pressure vessel is then charged with high purity acetylene for storage, transport and/or delivery of the high purity acetylene. The high purity acetylene may be useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.