Abstract: A purified phage having a specific bactericidal activity against Burkholderia pseudomallei (Bp), such as a Bp phage vB_BpP_HN01. A composition for preventing or treating an infectious disease caused by the Bp includes the phage as an active ingredient. The present disclosure further provides an antibiotic including the phage as an active ingredient, a feed additive composition including the phage as an active ingredient, and a disinfectant or a cleaning agent including the phage as an active ingredient. The present disclosure further provides a method for using the Bp. The purified phage has a specific bactericidal activity against the Bp. Therefore, the phage may be used for the prevention or treatment of an infectious disease caused by the Bp, and may also be widely used for the preparation of an antibiotic, a drug, a bactericide, an antiseptic, a disinfectant, and a diagnostic preparation for a bacterial infection.

Abstract: The present invention relates to a rapid assembled small-sized block polymer material with low quenching temperature and the preparation and application thereof. In particular, the present invention discloses a block copolymer, and glass transition temperature of the block copolymer is less than 120° C. The present invention also discloses the preparation and application of the block copolymer. The block copolymer can achieve excellent phase separation and rapid patterning at a lower annealing temperature (e.g. 80° C.) and a shorter annealing time (e.g. 30 s), and a photolithographic pattern with a very high resolution (e.g. 5 nm half-pitch) can be further obtained by etching, which provides a new photolithographic mean for further extension of Moore's Law to achieve semiconductor photolithography with a resolution of less than 10 nm, or even 5 nm (half-pitch).

Abstract: The present invention discloses a block copolymer comprising at least a block A and a block B, wherein the monomer of block A contains one or more of the structural units: a C3-C6 alkenyl group containing a substituent or a C3-C6 alkenyl group; wherein the number of R1 is 0, 1, 2, 3, 4 or 5; R2 is selected from the group consisting of: absent, substituted or unsubstituted C1-C6 alkyl, substituted or unsubstituted C1-C6 alkoxyl, hydroxyl, halogen; “substituted” means a group is substituted by one or more substituents selected from halogen and hydroxyl; block B is obtained by polymerization of the monomer R6 is selected from F or a group containing F, and the number of R6 is 0, 1, 2, 3, 4 or 5. The block copolymer can assemble rapidly at a low temperature with self-repairing performance to reduce the defect rate.

Abstract: The present invention relates to a rapid assembled small-sized block polymer material with low quenching temperature and the preparation and application thereof. In particular, the present invention discloses a block copolymer, and glass transition temperature of the block copolymer is less than 120° C. The present invention also discloses the preparation and application of the block copolymer. The block copolymer can achieve excellent phase separation and rapid patterning at a lower annealing temperature (e.g. 80° C.) and a shorter annealing time (e.g. 30 s), and a photolithographic pattern with a very high resolution (e.g. 5 nm half-pitch) can be further obtained by etching, which provides a new photolithographic mean for further extension of Moore's Law to achieve semiconductor photolithography with a resolution of less than 10 nm, or even 5 nm (half-pitch).