Abstract: The present invention relates to a rapid assembled small-sized block polymer material with low quenching temperature and the preparation and application thereof. In particular, the present invention discloses a block copolymer, and glass transition temperature of the block copolymer is less than 120° C. The present invention also discloses the preparation and application of the block copolymer. The block copolymer can achieve excellent phase separation and rapid patterning at a lower annealing temperature (e.g. 80° C.) and a shorter annealing time (e.g. 30 s), and a photolithographic pattern with a very high resolution (e.g. 5 nm half-pitch) can be further obtained by etching, which provides a new photolithographic mean for further extension of Moore's Law to achieve semiconductor photolithography with a resolution of less than 10 nm, or even 5 nm (half-pitch).

Abstract: The present invention discloses a block copolymer comprising at least a block A and a block B, wherein the monomer of block A contains one or more of the structural units: a C3-C6 alkenyl group containing a substituent or a C3-C6 alkenyl group; wherein the number of R1 is 0, 1, 2, 3, 4 or 5; R2 is selected from the group consisting of: absent, substituted or unsubstituted C1-C6 alkyl, substituted or unsubstituted C1-C6 alkoxyl, hydroxyl, halogen; “substituted” means a group is substituted by one or more substituents selected from halogen and hydroxyl; block B is obtained by polymerization of the monomer R6 is selected from F or a group containing F, and the number of R6 is 0, 1, 2, 3, 4 or 5. The block copolymer can assemble rapidly at a low temperature with self-repairing performance to reduce the defect rate.

Abstract: The present invention relates to a rapid assembled small-sized block polymer material with low quenching temperature and the preparation and application thereof. In particular, the present invention discloses a block copolymer, and glass transition temperature of the block copolymer is less than 120° C. The present invention also discloses the preparation and application of the block copolymer. The block copolymer can achieve excellent phase separation and rapid patterning at a lower annealing temperature (e.g. 80° C.) and a shorter annealing time (e.g. 30 s), and a photolithographic pattern with a very high resolution (e.g. 5 nm half-pitch) can be further obtained by etching, which provides a new photolithographic mean for further extension of Moore's Law to achieve semiconductor photolithography with a resolution of less than 10 nm, or even 5 nm (half-pitch).