Abstract: This application provides a polyimide fiber and a preparation method thereof. This method comprises first subjecting a dianhydride compound and a diamine compound to a polymerization reaction in a solvent to obtain a polyamic acid solution, wherein said diamine compound comprises a diamine having a structure of Formula 12 or Formula 13, wherein A is S or O; said dianhydride compound comprises one or more of dianhydrides having structures of Formula 14 and Formula 15; and t is 0 or 1; then subjecting said polyamic acid solution to spinning to obtain a polyamic acid fiber; and sequentially subjecting said polyamic acid fiber to imidization and thermal drawing to obtain a polyimide fiber. The polyimide fiber having the above structure has a higher rigidity and can introduce a hydrogen bond to provide an interaction between molecular chains so as to influence the arrangement of the molecular chain in the polymer and the crystallinity, which imparts more excellent mechanical properties to the polyimide fiber.

Abstract: This disclosure provides a polyimide fiber prepared from a dianhydride compound and a diamine compound, wherein said diamine compound is selected from one or more of the compounds represented by the following formulae (I), (II), (III) and (IV). A polyimide fiber is prepared by using a polyimide polymer system having a specific hydroxyl heterocyclic diamine copolymerization structure, and the prepared polyimide fiber has relatively high strength and modulus and is resistant to high temperature. Furthermore, the polyimide fiber prepared by this disclosure is provided with an active group on its surface, thus being easily adhered to various resin matrices, and the composite material prepared has good mechanical properties.

Abstract: In one embodiment, a SO-STT device has a non-symmetric device geometry. The device may be fabricated to have a non-symmetric magnetic pattern by tilting a shaped magnetic pattern (e.g., an ellipse, diamond, rectangle, etc. shaped magnetic pattern) such that the pattern's main (long and short) axes are tilted with respected to an in-plane current direction. Alternatively, the non-symmetric device geometry may be produced by locating the magnetic pattern away from the center of a current injection line. The non-symmetric may permit switching absent application of an external magnetic field. A SO-STT device with non-symmetric device geometry, or another type of SO-STT device, may further integrate an additional semiconductor, insulator or metal layer into the device's multilayer stack. By integrating the additional semiconductor, insulator or metal layer, a significant reduction of SO-STT switching current density may be achieved.

Abstract: Various embodiments relate a method for depositing a layer onto a workpiece using plasma. The method comprises arranging the workpiece and a source material inside a vacuum chamber. The method also comprises applying energy to the source material to cause atoms of the source material to be ejected from a surface of the source material into a plasma. The method further comprises orientating the workpiece with respect to the source material to prevent direct propagation of the ejected atoms from the source material to a work surface of the workpiece and to permit deposition of the layer onto the workpiece by ejected atoms which impact the work surface after colliding with particles of the plasma. Various embodiments also provide a corresponding apparatus.

Abstract: A spin orbit torque-based spintronics device that includes a ferromagnet layer having a first surface and a second surface opposed to each other, a metal layer and a spacer layer covering the first surface and the second surface of the ferromagnet layer, respectively, and an dielectric layer covering either the metal layer or the spacer layer. Also disclosed are two related spin orbit torque-based spintronics devices and methods of using these three spintronics devices.

Abstract: Disclosed is a graphene-based terahertz device that includes a top graphene layer, a bottom graphene layer, and a middle layer disposed between the top graphene layer and the bottom graphene layer. The middle layer is a liquid crystal layer, a piezocrystal layer, an ionic liquid layer, or an ion gel layer. Also disclosed are methods of preparing different embodiments of the above-described graphene-based terahertz device.

Abstract: In one embodiment, a SO-STT device has a non-symmetric device geometry. The device may be fabricated to have a non-symmetric magnetic pattern by tilting a shaped magnetic pattern (e.g., an ellipse, diamond, rectangle, etc. shaped magnetic pattern) such that the pattern's main (long and short) axes are tilted with respected to an in-plane current direction. Alternatively, the non-symmetric device geometry may be produced by locating the magnetic pattern away from the center of a current injection line. The non-symmetric may permit switching absent application of an external magnetic field. A SO-STT device with non-symmetric device geometry, or another type of SO-STT device, may further integrate an additional semiconductor, insulator or metal layer into the device's multilayer stack. By integrating the additional semiconductor, insulator or metal layer, a significant reduction of SO-STT switching current density may be achieved.

Abstract: A spin orbit torque-based spintronics device that includes a ferromagnet layer having a first surface and a second surface opposed to each other, a metal layer and a spacer layer covering the first surface and the second surface of the ferromagnet layer, respectively, and an dielectric layer covering either the metal layer or the spacer layer. Also disclosed are two related spin orbit torque-based spintronics devices and methods of using these three spintronics devices.

Abstract: Disclosed is a graphene-based terahertz device that includes a top graphene layer, a bottom graphene layer, and a middle layer disposed between the top graphene layer and the bottom graphene layer. The middle layer is a liquid crystal layer, a piezocrystal layer, an ionic liquid layer, or an ion gel layer. Also disclosed are methods of preparing different embodiments of the above-described graphene-based terahertz device.

Abstract: Various embodiments relate a method for depositing a layer onto a workpiece using plasma. The method comprises arranging the workpiece and a source material inside a vacuum chamber. The method also comprises applying energy to the source material to cause atoms of the source material to be ejected from a surface of the source material into a plasma. The method further comprises orientating the workpiece with respect to the source material to prevent direct propagation of the ejected atoms from the source material to a work surface of the workpiece and to permit deposition of the layer onto the workpiece by ejected atoms which impact the work surface after colliding with particles of the plasma. Various embodiments also provide a corresponding apparatus.

Abstract: A light-emitting device comprising a pair of electrodes and a light-emitting layer or a plurality of organic layers comprising a light-emitting layer disposed therebetween, the light emitting layer or at least one of a plurality of organic layers comprising the light-emitting layer comprising at least one compound represented by the following general formula (1): wherein each of Ar11, Ar12, Ar13, Ar14 and Ar15 represents an aryl group or a heteroaryl group; Ar represents a benzene ring, a naphthalene ring; a phenanthrene ring or an anthracene ring; at least one of Ar, Ar11, Ar12, Ar13, Ar14 and Ar15 is a condensed aryl group, a condensed or uncondensed heteroaryl group or a group comprising a condensed aryl group or a condensed or uncondensed heteroaryl group; Ar11, Ar12, Ar13, Ar14 and Ar15 are not bonded to each other to form a ring; R11 represents a substituent; and n11 represents an integer of 0 or more.

Abstract: A light-emitting device comprising a pair of electrodes and a light-emitting layer or a plurality of organic layers comprising a light-emitting layer disposed therebetween, the light-emitting layer or at least one of a plurality of organic layers comprising the light-emitting layer comprising at least one compound represented by the following general formula (1): wherein each of Ar11, Ar12, Ar13, Ar14 and Ar15 represents an aryl group or a heteroaryl group; Ar represents a benzene ring, a naphthalene ring, a phenanthrene ring or an anthracene ring; at least one of Ar, Ar11, Ar12, Ar13, Ar14 and Ar15 is a condensed aryl group, a condensed or uncondensed heteroaryl group or a group comprising a condensed aryl group or a condensed or uncondensed heteroaryl group; Ar11, Ar12, Ar13, AR14 and Ar15 are not bonded to each other to form a ring; R11 represents a substituent; and n11 represents an integer of 0 or more.

Abstract: The present invention belongs to a bonding technical field of biochips or micromechanical electrical devices, more specifically, to a novel method for bonding two solid planes containing silicon, oxygen, metal or other elements at a moderate temperature via surface assembling of active functional groups. The method includes the steps of: (1) cleaning and hydroxylating solid planes of silicon plate, quartz or glass; (2) aminating a hydroxylated surfaces of the substrate; (3) forming a mono-layer or multi-layer assembled film with compound monomers having an active bi-functional or multi-functional group on an aminated substrate surface; and (4) contacting two solid planes with a assembled film having the same or different active functional groups on its surface tightly, and forming covalent bonds at an appropriate temperature, pressure and a vacuum degree.

Abstract: A light-emitting device comprising a pair of electrodes and one or more organic layers disposed therebetween, one or more organic layers comprising a light-emitting layer, wherein the light-emitting device utilizes a triplet exciton for light emission and comprises at least one compound represented by the following formula (1): wherein each of Ar11, Ar12, Ar13, Ar14 and Ar15 represents an aryl group or a heteroaryl group; Ar represents an aryl group; R1 represents a substituent; and n1 represents an integer of 0 or more.

Abstract: A light-emitting device comprising a pair of electrodes and a light-emitting layer or a plurality of organic layers comprising a light-emitting layer disposed therebetween, the light emitting layer or at least one of a plurality of organic layers comprising the light-emitting layer comprising at least one compound represented by the following general formula (1): wherein each of Ar11, Ar12, Ar13, Ar14 and Ar15 represents an aryl group or a heteroaryl group; Ar represents a benzene ring, a naphthalene ring; a phenanthrene ring or an anthracene ring; at least one of Ar, Ar11, Ar12, Ar13, Ar14 and Ar15 is a condensed aryl group, a condensed or uncondensed heteroaryl group or a group comprising a condensed aryl group or a condensed or uncondensed heteroaryl group; Ar11, Ar12, Ar13, Ar14 and Ar15 are not bonded to each other to form a ring; R11 represents a substituent; and n11 represents an integer of 0 or more.

Abstract: A light-emitting device comprising: a pair of electrodes formed on a substrate; and organic compound layers provided in between the electrodes, wherein the organic compound layers comprises a light-emitting layer comprising a hole-transporting material and a phosphorescent compound and an electron-transporting layer comprising an electron-transporting material, and an ionization potential of the electron-transporting material is 5.9 eV or more or wherein the organic compound layers comprises a hole-transporting layer comprising a hole-transporting material, a light-emitting layer comprising a phosphorescent compound and an electron-transporting layer comprising an electron-transporting material, and an ionization potential of the electron-transporting material is 5.9 eV or more.

Abstract: A light-emitting device comprising a pair of electrodes and one or more organic layers disposed therebetween, one or more organic layers comprising a light-emitting layer, wherein the light-emitting device utilizes a triplet exciton for light emission and comprises at least one compound represented by the following formula (1): 1

Abstract: A light-emitting device comprising: a pair of electrodes formed on a substrate; and organic compound layers provided in between the electrodes, wherein the organic compound layers comprises a light-emitting layer comprising a hole-transporting material and a phosphorescent compound and an electron-transporting layer comprising an electron-transporting material, and an ionization potential of the electron-transporting material is 5.9 eV or more or wherein the organic compound layers comprises a hole-transporting layer comprising a hole-transporting material, a light-emitting layer comprising a phosphorescent compound and an electron-transporting layer comprising an electron-transporting material, and an ionization potential of the electron-transporting material is 5.9 eV or more.