Abstract: The present invention provides a packaging structure and a manufacturing method thereof. The packaging structure includes a lower package, an upper package and a first redistribution stack layer disposed between the lower package and the upper package, wherein the first redistribution stack layer is electrically connected to the lower package and the upper package; the lower package includes a prefabricated substrate and a first plastic packaging layer surrounding the periphery of the prefabricated substrate; and the minimum line width/line spacing of the first redistribution stack layer is less than the minimum line width/line spacing of the prefabricated substrate. The lower package includes the prefabricated substrate and the first redistribution stack layer is disposed above the prefabricated substrate and has the minimum line width/line spacing less than that of the prefabricated substrate, so that more chips and/or device packages are integrated in the packaging structure.

Abstract: The present invention provides a packaging structure and a manufacturing method thereof. The packaging structure includes: a lower package, an upper package disposed above the lower package, and a first redistribution stack layer that is disposed between the lower package and the upper package and is electrically connected to the lower package and the upper package. The lower package includes a first prefabricated redistribution stack layer and a first plastic packaging layer surrounding the first prefabricated redistribution stack layer. A minimum line width and line spacing of at least one first prefabricated conductive layer in the first prefabricated redistribution stack layer is less than a minimum line width and line spacing of at least one first conductive layer in the first redistribution stack layer.

Abstract: A tantalum powder, a tantalum powder compact, a tantalum powder sintered body, a tantalum anode, an electrolytic capacitor and a preparation method for tantalum powder. The tantalum powder contains boron element, and the tantalum powder has a specific surface area of greater than or equal to 4 m2/g; the ratio of the boron content of the tantalum powder to the specific surface area of the tantalum powder is 2˜16; the boron content is measured in weight ppm, and the specific surface area is measured in m2/g; Powder that can pass through a ?-mesh screen in the tantalum powder accounts for over 85% of the total weight of the tantalum powder, where ?=150˜170; and the tantalum powder with high CV has a low leakage current and dielectric loss, and good moldability.

Abstract: The present invention relates to an integrated package structure. The integrated package structure includes a main substrate, a first module, a second module, a cavity element and a large-size device, wherein the main substrate includes a first surface of the main substrate and a second surface of the main substrate opposite to each other; the first module and the second module are stacked; the first module and the second module which are stacked, the cavity element and the large-size device are horizontally arranged on the first surface of the main substrate, and are respectively electrically connected to the main substrate. Owing to this arrangement, the demand of a current integrated package structure for a further high-density, miniaturized, multi-dimensional and multi-demand layout design can be met.

Abstract: The present invention provides an SIP package structure. The SIP package structure comprises a first module, a second module and a shielding assembly, wherein the first module and the second module are horizontally distributed or vertically stacked; electromagnetic sensitive frequencies of the first module and the second module are different; the shielding assembly comprises a first shielding structure covering the first module and a second shielding structure covering the second module; and at least part of the first shielding structure and/or at least part of the second shielding structure are/is disposed between the first module and the second module.

Abstract: The present invention relates to a package structure and package method for a cavity device group. The package structure includes a substrate, the substrate including a first substrate surface and a second substrate surface which face each other, wherein a first cavity device group is provided on the first substrate surface. The package structure further includes: a first sealing layer encapsulating the first cavity device group; and a first plastic package layer encapsulating the first sealing layer, wherein the flowability of a sealing material of the first sealing layer is less than that of a plastic package material of the first plastic package layer. The problems of device damage and functional failure of a cavity device group in the existing package structure because it is likely affected by a mold flow pressure in the injection molding process can be solved, while the function and miniaturization of a module are maintained.

Abstract: A tantalum powder, a tantalum powder compact, a tantalum powder sintered body, a tantalum anode, an electrolytic capacitor and a preparation method for tantalum powder. The tantalum powder contains boron element, and the tantalum powder has a specific surface area of greater than or equal to 4 m2/g; the ratio of the boron content of the tantalum powder to the specific surface area of the tantalum powder is 2˜16; the boron content is measured in weight ppm, and the specific surface area is measured in m2/g; Powder that can pass through a ?-mesh screen in the tantalum powder accounts for over 85% of the total weight of the tantalum powder, where ?=150˜170; and the tantalum powder with high CV has a low leakage current and dielectric loss, and good moldability.

Abstract: The present invention relates to a high-purity tantalum powder and a preparation method therefore. The tantalum powder has a purity of more than 99.995%, as analyzed by GDMS. Preferably, the tantalum powder has an oxygen content of not more than 1000 ppm, a nitrogen content of not more than 50 ppm, a hydrogen content of not more than 20 ppm, a magnesium content of not more than 5 ppm, and an average particle diameter D50 of less than 25 ?m.

Abstract: Provided are a flaked tantalum powder and method for preparation thereof; said flaked tantalum powder contains 300-1800 ppm of nitrogen, 10-100 ppm of phosphorus, and 1-40 ppm of boron. The flaked tantalum powder has high capacity and low leakage current, good puncture-resistance, and particularly outstanding high-frequency attributes. Doping with nitrogen during oxygen reduction is performed before three thermal treatments are carried out; the solution of performing three thermal treatments and a subsequent process improves the uniformity of distribution of elemental nitrogen and makes up for the deficiency of an oxide film, thereby increasing the pressure resistance of the product, and especially its high-frequency attributes.

Abstract: The present invention relates to a hot melt extrusion composition, a process for preparing a hot melt extruded product using the hot melt extrusion composition, a solid dispersion of decoquinate, and pharmaceutical uses of the composition and the solid dispersion of decoquinate. The hot melt extrusion composition comprises 5 to 30% of decoquinate, 60 to 90% of a polymeric carrier and 0 to 10% of a surfactant. The hot melt extrusion composition can be melted into a liquid at a temperature below the melting point of decoquinate to achieve complete mixing, effectively avoiding the possible thermal decomposition of decoquinate and other components of the composition during the hot-melt process, thus retaining their original structures and pharmacodynamic activity.

Abstract: A method for providing a tantalum powder with a piece+block structure, comprising the following steps: 1) providing a granulous tantalum powder, and dividing same into a first part and a second part; 2) putting the first part of the tantalum powder in a ball mill for ball milling, taking the powder out after the ball milling and sieving same, and obtaining a tantalum powder in the form of a piece; 3) mixing the tantalum powder in the form of a piece and the second part of the tantalum powder to obtain a mixture, and preferably, the mixing proportion of the tantalum powder in the form of a piece and the granulous tantalum powder being 1:0.1˜1, preferably being 1:0.25˜0.8, and more preferably being 1:0.4˜0.6; and 4) performing the steps of water washing, acid washing, and nodularization on the mixture to finally obtain a tantalum powder with a piece+block structure.

Abstract: The present invention relates to a hot melt extrusion composition, a process for preparing a hot melt extruded product using the hot melt extrusion composition, a solid dispersion of decoquinate, and pharmaceutical uses of the composition and the solid dispersion of decoquinate. The hot melt extrusion composition comprises 5 to 30% of decoquinate, 60 to 90% of a polymeric carrier and 0 to 10% of a surfactant. The hot melt extrusion composition can be melted into a liquid at a temperature below the melting point of decoquinate to achieve complete mixing, effectively avoiding the possible thermal decomposition of decoquinate and other components of the composition during the hot-melt process, thus retaining their original structures and pharmacodynamic activity.

Abstract: The present invention relates to a high-purity tantalum powder and a preparation method therefore. The tantalum powder has a purity of more than 99.995%, as analyzed by GDMS. Preferably, the tantalum powder has an oxygen content of not more than 1000 ppm, a nitrogen content of not more than 50 ppm, a hydrogen content of not more than 20 ppm, a magnesium content of not more than 5 ppm, and an average particle diameter D50 of less than 25 ?m.

Abstract: A method for providing a tantalum powder with a piece+block structure, comprising the following steps: 1) providing a granulous tantalum powder, and dividing same into a first part and a second part; 2) putting the first part of the tantalum powder in a ball mill for ball milling, taking the powder out after the ball milling and sieving same, and obtaining a tantalum powder in the form of a piece; 3) mixing the tantalum powder in the form of a piece and the second part of the tantalum powder to obtain a mixture, and preferably, the mixing proportion of the tantalum powder in the form of a piece and the granulous tantalum powder being 1:0.1˜1, preferably being 1:0.25˜0.8, and more preferably being 1:0.4˜0.6; and 4) performing the steps of water washing, acid washing, and nodularization on the mixture to finally obtain a tantalum powder with a piece+block structure.

Abstract: The present invention provides a process for preparing a tantalum powder with high specific capacity, which process comprising the steps of, in sequence, (1) a first reduction step: mixing tantalum oxide powder and a first reducing agent powder homogenously, and then carrying out reduction reaction in hydrogen and/or inert gas or vacuum atmosphere to obtain a tantalum suboxides powder; (2) a second reduction step: mixing the tantalum suboxides powder obtained from the step (1), in which impurities have been removed, and a second reducing agent powder homogenously, and then carrying out reduction reaction in hydrogen and/or inert gas or vacuum atmosphere to obtain a tantalum powder having high oxygen content; (3) a third reduction step: mixing the tantalum powder having high oxygen content obtained from the step (2), in which impurities have been removed, with a third reducing agent powder homogenously, and then carrying out reduction reaction in hydrogen and/or inert gas or vacuum atmosphere to obtain a tanta

Abstract: The present invention provides a process for preparing a tantalum powder with high specific capacity, which process comprising the steps of, in sequence, (1) a first reduction step: mixing tantalum oxide powder and a first reducing agent powder homogenously, and then carrying out reduction reaction in hydrogen and/or inert gas or vacuum atmosphere to obtain a tantalum suboxides powder; (2) a second reduction step: mixing the tantalum suboxides powder obtained from the step (1), in which impurities have been removed, and a second reducing agent powder homogenously, and then carrying out reduction reaction in hydrogen and/or inert gas or vacuum atmosphere to obtain a tantalum powder having high oxygen content; (3) a third reduction step: mixing the tantalum powder having high oxygen content obtained from the step (2), in which impurities have been removed, with a third reducing agent powder homogenously, and then carrying out reduction reaction in hydrogen and/or inert gas or vacuum atmosphere to obtain a tanta

Abstract: The present invention relates to a process for preparing powders of niobium suboxides or niobium, wherein the process comprising: mixing the niobium oxides as raw material with reducing agent, conducting a reaction at a temperature in the range of 600˜1300° C. in an atmosphere of vacuum or inert gas or hydrogen gas, leaching the reaction product to remove the residual reducing agent and the oxides of the reducing agent and other impurities, heat treating at a temperature of the range of 1000˜1600° C. in an atmosphere of vacuum or inert gas, and screening to obtain the powders of niobium suboxide or niobium of capacitor grade. According to the present invention, the niobium oxides were directly reduced into capacitor grade niobium suboxides or niobium with reducing agents which can be easily removed by mineral acids, wherein the speed of the reaction can be controlled and the reaction can directly reduce the niobium oxides into capacitor grade niobium suboxides or niobium powder.

Abstract: The present invention relates to a process for preparing powders of niobium suboxides or niobium, wherein the process comprising: mixing the niobium oxides as raw material with reducing agent, conducting a reaction at a temperature in the range of 600˜1300° C. in an atmosphere of vacuum or inert gas or hydrogen gas, leaching the reaction product to remove the residual reducing agent and the oxides of the reducing agent and other impurities, heat treating at a temperature of the range of 1000˜1600° C. in an atmosphere of vacuum or inert gas, and screening to obtain the powders of niobium suboxide or niobium of capacitor grade. According to the present invention, the niobium oxides were directly reduced into capacitor grade niobium suboxides or niobium with reducing agents which can be easily removed by mineral acids, wherein the speed of the reaction can be controlled and the reaction can directly reduce the niobium oxides into capacitor grade niobium suboxides or niobium powder.