Patents by Inventor Xue Ying Chen

Xue Ying Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040135637
    Abstract: A preamplifier includes a detector to detect an input optical power level and convert the detected input optical power level into an input current. The preamplifier also includes a transimpedance amplifier that provides a gain for the input current received from the detector. A dummy transimpedance amplifier is provided to supply a reference voltage. The dummy transimpedance amplifier has a structure similar to that of the transimpedance amplifier. A unity gain buffer is used to reduce the output impedance of the reference voltage and to output a bias voltage to both the transimpedance amplifier and the dummy transimpedance amplifier. This bias voltage can make the gate-controlled MOSFET working in its triode region, and the load resistance of the core amplifier can be easily controlled such that the gain and bandwidth of the core amplifier can be widely controlled. This results in the preamplifier having a high stability while its feedback resistor is controlled to achieve wide dynamic range.
    Type: Application
    Filed: January 15, 2003
    Publication date: July 15, 2004
    Inventor: Xue Ying Chen
  • Patent number: 6759900
    Abstract: A preamplifier includes a detector to detect an input optical power level and convert the detected input optical power level into an input current. The preamplifier also includes a transimpedance amplifier that provides a gain for the input current received from the detector. A dummy transimpedance amplifier is provided to supply a reference voltage. The dummy transimpedance amplifier has a structure similar to that of the transimpedance amplifier. A unity gain buffer is used to reduce the output impedance of the reference voltage and to output a bias voltage to both the transimpedance amplifier and the dummy transimpedance amplifier. This bias voltage can make the gate-controlled MOSFET working in its triode region, and the load resistance of the core amplifier can be easily controlled such that the gain and bandwidth of the core amplifier can be widely controlled. This results in the preamplifier having a high stability while its feedback resistor is controlled to achieve wide dynamic range.
    Type: Grant
    Filed: January 15, 2003
    Date of Patent: July 6, 2004
    Assignee: Agilent Technologies, Inc.
    Inventor: Xue Ying Chen