Abstract: A method of preparing an ITO ceramic target includes that: In2O3 powder with mass fraction of 90˜97 and SnO2 powder with mass fraction of 10˜3 are ball-milled and mixed with deionized water, diluent, binder and polymer material by a sand mill to obtain an ITO ceramic slurry with a solid content between 70˜80% and a viscosity between 120˜300 mpa·s, with an average particle size D50 of the mixed powder controlled at 100˜300 nm; the ITO ceramic slurry is shaped by a pressure grouting to obtain an ITO ceramic green body with a relative density of 58˜62%; the ITO ceramic green body is put into a degreasing and sintering integrated furnace, and under a degreasing temperature of 700˜800° C., the ITO ceramic target is degreased in an atmospheric oxygen atmosphere for the time set to 12˜36 hours; the temperature increases from the degreasing temperature to the first sintering temperature of 1,600˜1,650° C.

Abstract: A method of preparing an indium oxide spherical powder with a controllable grain shape includes: (1) reacting a sulfuric acid solution, and then adding a nitric acid solution, to react with the metal indium to obtain a mixed solution system containing indium sulfate and indium nitrate; (2) adjusting a concentration of indium ions in the mixed solution system to between 0.45˜0.6M; (3) performing a precipitation reaction of the mixed solution with a precipitant, until a pH value of the solution is between 9˜10, and then having the solution precipitated and aged to obtain an indium hydroxide precursor slurry; (4) using a ceramic membrane to filter and wash the precursor slurry, and ending the washing to obtain a purified precursor sample; (5) drying the precursor sample at 80˜130° C.; and (6) ball-milling the precursor sample, and calcining the precursor at a calcination temperature to obtain the indium oxide powder.

Abstract: A variable-temperature and fast-sintering process for an alumina-doped zinc oxide target material is provided. Integrated degreasing and sintering processes are carried out on an alumina-doped zinc oxide biscuit, The degreasing process is carried out in air atmosphere, and a high-density alumina-doped zinc oxide target material is produced by a variable-temperature treatment during the sintering process under a state of circulating controllable mixed atmosphere. The mixed atmosphere is air and oxygen. As a result, a sintering time is greatly reduced, so that a fast-activated sintering is realized to inhibit grain growth.

Abstract: A method of preparing an ITO ceramic target includes that: In2O3 powder with mass fraction of 90˜97 and SnO2 powder with mass fraction of 10˜3 are ball-milled and mixed with deionized water, diluent, binder and polymer material by a sand mill to obtain an ITO ceramic slurry with a solid content between 70˜80% and a viscosity between 120˜300 mpa·s, with an average particle size D50 of the mixed powder controlled at 100˜300 nm; the ITO ceramic slurry is shaped by a pressure grouting to obtain an ITO ceramic green body with a relative density of 58˜62%; the ITO ceramic green body is put into a degreasing and sintering integrated furnace, and under a degreasing temperature of 700˜800° C., the ITO ceramic target is degreased in an atmospheric oxygen atmosphere for the time set to 12˜36 hours; the temperature increases from the degreasing temperature to the first sintering temperature of 1,600˜1,650° C.

Abstract: A method of preparing an indium oxide spherical powder with a controllable grain shape includes: (1) reacting a sulfuric acid solution, and then adding a nitric acid solution, to react with the metal indium to obtain a mixed solution system containing indium sulfate and indium nitrate; (2) adjusting a concentration of indium ions in the mixed solution system to between 0.45˜0.6M; (3) performing a precipitation reaction of the mixed solution with a precipitant, until a pH value of the solution is between 9-10, and then having the solution precipitated and aged to obtain an indium hydroxide precursor slurry; (4) using a ceramic membrane to filter and wash the precursor slurry, and ending the washing to obtain a purified precursor sample; (5) drying the precursor sample at 80˜130° C.; and (6) ball-milling the precursor sample, and calcining the precursor at a calcination temperature to obtain the indium oxide powder.