Abstract: A method of forming a resistor circuit, the method comprising forming a first resistor comprising a first type of resistor, forming a second resistor comprising a second type of resistor, the first type of resistor being different from the second type of resistor and simultaneously doping a first part of the first resistor and a second part of the second resistor, the first resistor and the second resistor being configured such that doping of the first part of the first resistor and the second part of the second resistor defines a temperature coefficient of the first resistor and a temperature coefficient of the second resistor, wherein the temperature coefficient of the first resistor and the temperature coefficient of the second resistor have opposite signs.

Abstract: In one aspect, a transistor includes a diffusion region having a drain, a source, and a channel between said drain and source. The transistor further includes an isolation region around said diffusion region for electrically isolating said transistor. In addition, the transistor includes a gate poly overlapping at least a part of said channel, wherein said diffusion region extends laterally beyond said gate poly in a channel width direction.

Abstract: A method of forming a resistor circuit, the method comprising forming a first resistor comprising a first type of resistor, forming a second resistor comprising a second type of resistor, the first type of resistor being different from the second type of resistor and simultaneously doping a first part of the first resistor and a second part of the second resistor, the first resistor and the second resistor being configured such that doping of the first part of the first resistor and the second part of the second resistor defines a temperature coefficient of the first resistor and a temperature coefficient of the second resistor, wherein the temperature coefficient of the first resistor and the temperature coefficient of the second resistor have opposite signs.

Abstract: A light shield for shielding a light sensitive element in an image sensor comprising a primary plate located such as to shield the light sensitive element from incident light, the primary plate comprising at least one aperture and the or each aperture being associated with a light blocking structure, wherein the light blocking structure comprises a secondary plate and a wall; the wall is arranged between the primary plate and the secondary plate, and is configured to act as a light barrier to light passing between the primary plate and the secondary plate.

Abstract: A CMOS image sensor pixel (200) comprising a photosensitive element (101) for generating a charge in response to incident light; a plurality of charge storage elements (103); a plurality of transfer gates (102) for enabling the transfer of charge between the photosensitive element and an associated one of the charge storage elements; and one or more first electrical connections (201) for placing at least two of the plurality of charge storage elements in mutual electrical contact.

Abstract: A CMOS image sensor pixel (200) comprising a photo-sensitive element (101) for generating a charge in response to incident light; a plurality of charge storage elements (103); a plurality of transfer gates (102) for enabling the transfer of charge between the photosensitive element and an associated one of the charge storage elements; and one or more first electrical connections (201) for placing at least two of the plurality of charge storage elements in mutual electrical contact.

Abstract: A light shield for shielding a light sensitive element in an image sensor comprising a primary plate located such as to shield the light sensitive element from incident light, the primary plate comprising at least one aperture and the or each aperture being associated with a light blocking structure, wherein the light blocking structure comprises a secondary plate and a wall; the wall is arranged between the primary plate and the secondary plate, and is configured to act as a light barrier to light passing between the primary plate and the secondary plate.

Abstract: A bipolar junction transistor is provided with an emitter region, an oxide region, a base region and a collector region. The base region is located between the emitter region and the oxide region and has a junction with the emitter region and an interface with the oxide region. An at least partially conductive element such as metal or silicon is positioned to overlap with at least part of the junction between the base region and the emitter region, thereby forming a gate. The gate also overlaps with at least part of the interface between the base region and the oxide region. When a suitable bias voltage is applied to the gate, the gain of the transistor can be increased.

Abstract: A bipolar junction transistor is provided with an emitter region, an oxide region, a base region and a collector region. The base region is located between the emitter region and the oxide region and has a junction with the emitter region and an interface with the oxide region. An at least partially conductive element such as metal or silicon is positioned to overlap with at least part of the junction between the base region and the emitter region, thereby forming a gate. The gate also overlaps with at least part of the interface between the base region and the oxide region. When a suitable bias voltage is applied to the gate, the gain of the transistor can be increased.