Patents by Inventor Xufan Li

Xufan Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250240102
    Abstract: This disclosure provides systems, methods and apparatuses for single photon emitters based on nanoribbons. A single photon emitter includes: a substrate; at least one nanostructure disposed on the substrate; and a nanoribbon disposed over at least one apex of the at least one nanostructure. The nanoribbon may include a transition metal dichalcogenide (TMD). A method of manufacturing a single photon emitter includes: growing a transition metal dichalcogenide (TMD) nanoribbon on a first substrate; collecting the TMD nanoribbon on a polymer film; stacking the TMD nanoribbon and polymer film on a second substrate having nanostructures with the TMD nanoribbon disposed over an apex of the at least one nanostructure; and removing the polymer film.
    Type: Application
    Filed: January 24, 2025
    Publication date: July 24, 2025
    Inventors: Xufan Li, Avetik R. Harutyunyan, Peter James Schuck, James Curtis Hone
  • Publication number: 20250109520
    Abstract: A manufacturing method for a single-crystal silicon rod and a single-crystal furnace. The single-crystal silicon rod is pulled through a single-crystal furnace, and a crucible of the single-crystal furnace has a depth ranging from 680 mm to 800 mm. The manufacturing method for a single-crystal silicon rod includes: initially charging a silicon material to the crucible, wherein a contact area between the silicon material in the crucible and the crucible is a, a contact area between a liquid level of the silicon material in the crucible and the outside is b, and 1.2?a/b?3.7.
    Type: Application
    Filed: December 22, 2023
    Publication date: April 3, 2025
    Inventors: Peng XIANG, Ziyang OU, Xufan LI, Yonghui LI, Yuang YANG
  • Publication number: 20240410080
    Abstract: The present disclosure generally relates to processes for forming a two-dimensional single atomic layer transition metal dichalcogenide (TMD). The present disclosure also generally relates to a two-dimensional single atomic layer TMD formed by the process. In an embodiment, a process for forming a continuous TMD film is provided. The process includes flowing a carrier gas into a processing volume of a processing chamber having a substrate positioned therein; heating an alkali metal salt, a transition metal oxide, and a chalcogenide to form reactive species; and exposing the substrate to the reactive species to form a continuous TMD film, wherein: the continuous TMD film comprises crystals having an average grain size of about 50 ?m to about 500 ?m; the crystals of the continuous TMD film are aligned in the same crystallographic orientation; and the continuous TMD film consists of a single atomic layer of transition metal dichalcogenide.
    Type: Application
    Filed: June 6, 2023
    Publication date: December 12, 2024
    Inventors: Xufan LI, Avetik HARUTYUNYAN
  • Publication number: 20240330734
    Abstract: Hybrid quantum sensors are provided. In some aspects, a hybrid quantum sensor comprises a first layer of diamond having multiple nitrogen-vacancy defect centers; and a second layer overlaying the first layer. The second layer forms a planar interface with the first layer, and includes at least one paramagnetic metal phthalocyanine. The at least one paramagnetic metal phthalocyanine comprises at least one transition metal.
    Type: Application
    Filed: March 29, 2024
    Publication date: October 3, 2024
    Inventors: Avetik HARUTYUNYAN, Xufan Li, Paola Cappellaro
  • Patent number: 12060642
    Abstract: A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: August 13, 2024
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Avetik R. Harutyunyan, Xufan Li
  • Patent number: 12053769
    Abstract: Aspects of the present disclosure generally relate to catalyst compositions including metal chalcogenides, processes for producing such catalyst compositions, processes for enhancing catalytic active sites in such catalyst compositions, and uses of such catalyst compositions in, e.g., processes for producing conversion products. In an aspect, a process for forming a catalyst composition is provided. The process includes introducing an electrolyte material and an amphiphile material to a metal chalcogenide to form the catalyst composition. In another aspect, a catalyst composition is provided. The catalyst composition includes a metal chalcogenide, an electrolyte material, and an amphiphile material. Devices for hydrogen evolution reaction are also provided.
    Type: Grant
    Filed: December 21, 2022
    Date of Patent: August 6, 2024
    Assignees: Honda Motor Co., Ltd., The Trustees of Columbia University in the City of New York
    Inventors: Xufan Li, Avetik Harutyunyan, Xiangye Liu, Baiching Li, James Curtis Hone, Daniel V. Esposito
  • Patent number: 11981996
    Abstract: A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.
    Type: Grant
    Filed: November 2, 2022
    Date of Patent: May 14, 2024
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Avetik R. Harutyunyan, Xufan Li
  • Publication number: 20240067827
    Abstract: An encapsulated nanoribbon having a nanotube of a dielectric material, wherein the nanotube has a diameter and a first length, and a nanoribbon at least partially encapsulated within the nanotube, the nanoribbon including a transition metal dichalcogenide and having a width and a second length, the second length being coextensive with the first length, and the width being no greater than the diameter. Also disclosed are methods of making the encapsulated nanoribbon.
    Type: Application
    Filed: August 25, 2023
    Publication date: February 29, 2024
    Inventors: Avetik R. HARUTYUNYAN, Xufan LI
  • Publication number: 20230141275
    Abstract: A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.
    Type: Application
    Filed: November 2, 2022
    Publication date: May 11, 2023
    Inventors: Avetik R. HARUTYUNYAN, Xufan LI
  • Patent number: 11639546
    Abstract: A method of forming a single atomic layer nanoribbon on a substrate by subjecting two or more precursor powders to a moisturized gas flow at a temperature sufficient to deposit the single atomic layer nanoribbon on the substrate via chemical vapor deposition, the single atomic layer nanoribbon having a transition metal dichalcogenide material and the substrate including fluorophlogopite mica, highly oriented pyrolytic graphite, or a combination thereof. Also described are single atomic layer nanoribbons prepared by the method.
    Type: Grant
    Filed: December 15, 2021
    Date of Patent: May 2, 2023
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Avetik R. Harutyunyan, Xufan Li
  • Publication number: 20230131300
    Abstract: Aspects of the present disclosure generally relate to catalyst compositions including metal chalcogenides, processes for producing such catalyst compositions, processes for enhancing catalytic active sites in such catalyst compositions, and uses of such catalyst compositions in, e.g., processes for producing conversion products. In an aspect, a process for forming a catalyst composition is provided. The process includes introducing an electrolyte material and an amphiphile material to a metal chalcogenide to form the catalyst composition. In another aspect, a catalyst composition is provided. The catalyst composition includes a metal chalcogenide, an electrolyte material, and an amphiphile material. Devices for hydrogen evolution reaction are also provided.
    Type: Application
    Filed: December 21, 2022
    Publication date: April 27, 2023
    Inventors: Xufan LI, Avetik HARUTYUNYAN, Xiangye LIU, Baiching LI, James Curtis HONE, Daniel V. ESPOSITO
  • Patent number: 11565247
    Abstract: Aspects of the present disclosure generally relate to catalyst compositions including metal chalcogenides, processes for producing such catalyst compositions, processes for enhancing catalytic active sites in such catalyst compositions, and uses of such catalyst compositions in, e.g., processes for producing conversion products. In an aspect, a process for forming a catalyst composition is provided. The process includes introducing an electrolyte material and an amphiphile material to a metal chalcogenide to form the catalyst composition. In another aspect, a catalyst composition is provided. The catalyst composition includes a metal chalcogenide, an electrolyte material, and an amphiphile material. Devices for hydrogen evolution reaction are also provided.
    Type: Grant
    Filed: March 11, 2021
    Date of Patent: January 31, 2023
    Assignees: HONDA MOTOR CO., LTD., THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
    Inventors: Xufan Li, Avetik Harutyunyan, Xiangye Liu, Baiching Li, James Curtis Hone, Daniel V. Esposito
  • Publication number: 20220411944
    Abstract: Aspects of the present disclosure generally relate to catalyst compositions, processes for producing such catalyst compositions, and uses of such catalyst compositions. In an embodiment, a composition is provided. The composition includes an electrolyte material or an ion thereof, an amphiphile material or an ion thereof, and a metal component, the metal component comprising an alloy having the formula (M1)a(M2)b, wherein M1 is a Group 10-11 metal of the periodic table of the elements, M2 is a first Group 8-11 metal of the periodic table of the elements, M1 and M2 are different, and a and b are positive numbers. In another embodiment, a device is provided that includes an electrolyte material or ion thereof, an amphiphile material or ion thereof, and a metal component disposed on an electrode, the metal component comprising a bimetallic nanoframe, a trimetallic nanoframe, or a combination thereof.
    Type: Application
    Filed: March 30, 2022
    Publication date: December 29, 2022
    Inventors: Avetik HARUTYUNYAN, Shutang CHEN, Xufan LI
  • Publication number: 20220406923
    Abstract: The present disclosure generally relates to bilayer metal dichalcogenides, to processes for forming bilayer metal dichalcogenides, and to uses of bilayer metal dichalcogenides in devices for quantum electronics. In an aspect, a device is provided. The device includes a gate electrode, a substrate disposed over at least a portion of the gate electrode, and a bottom layer including a first metal dichalcogenide, the bottom layer disposed over at least a portion of the substrate. The device further includes a top layer including a second metal dichalcogenide, the top layer disposed over at least a portion of the bottom layer, the first metal dichalcogenide and the second metal dichalcogenide being the same or different. The device further includes a source electrode and a drain electrode disposed over at least a portion of the top layer.
    Type: Application
    Filed: June 17, 2021
    Publication date: December 22, 2022
    Inventors: Avetik Harutyunyan, Xufan Li
  • Patent number: 11519068
    Abstract: A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.
    Type: Grant
    Filed: January 13, 2021
    Date of Patent: December 6, 2022
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Avetik R. Harutyunyan, Xufan Li
  • Publication number: 20220325415
    Abstract: A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.
    Type: Application
    Filed: June 29, 2022
    Publication date: October 13, 2022
    Inventors: Avetik R. HARUTYUNYAN, Xufan Li
  • Publication number: 20220288576
    Abstract: Aspects of the present disclosure generally relate to catalyst compositions including metal chalcogenides, processes for producing such catalyst compositions, processes for enhancing catalytic active sites in such catalyst compositions, and uses of such catalyst compositions in, e.g., processes for producing conversion products. In an aspect, a process for forming a catalyst composition is provided. The process includes introducing an electrolyte material and an amphiphile material to a metal chalcogenide to form the catalyst composition. In another aspect, a catalyst composition is provided. The catalyst composition includes a metal chalcogenide, an electrolyte material, and an amphiphile material. Devices for hydrogen evolution reaction are also provided.
    Type: Application
    Filed: March 11, 2021
    Publication date: September 15, 2022
    Inventors: Xufan LI, Avetik HARUTYUNYAN, Xiangye LIU, Baiching LI, James Curtis HONE, Daniel V. ESPOSITO
  • Patent number: 11408073
    Abstract: A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.
    Type: Grant
    Filed: June 25, 2020
    Date of Patent: August 9, 2022
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Avetik R. Harutyunyan, Xufan Li
  • Publication number: 20220106681
    Abstract: A method of forming a single atomic layer nanoribbon on a substrate by subjecting two or more precursor powders to a moisturized gas flow at a temperature sufficient to deposit the single atomic layer nanoribbon on the substrate via chemical vapor deposition, the single atomic layer nanoribbon having a transition metal dichalcogenide material and the substrate including fluorophlogopite mica, highly oriented pyrolytic graphite, or a combination thereof. Also described are single atomic layer nanoribbons prepared by the method.
    Type: Application
    Filed: December 15, 2021
    Publication date: April 7, 2022
    Inventors: Avetik R. Harutyunyan, Xufan Li
  • Publication number: 20210324522
    Abstract: A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.
    Type: Application
    Filed: June 25, 2020
    Publication date: October 21, 2021
    Inventors: Avetik R. HARUTYUNYAN, Xufan LI