Abstract: An encapsulated nanoribbon having a nanotube of a dielectric material, wherein the nanotube has a diameter and a first length, and a nanoribbon at least partially encapsulated within the nanotube, the nanoribbon including a transition metal dichalcogenide and having a width and a second length, the second length being coextensive with the first length, and the width being no greater than the diameter. Also disclosed are methods of making the encapsulated nanoribbon.

Abstract: A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

Abstract: A method of forming a single atomic layer nanoribbon on a substrate by subjecting two or more precursor powders to a moisturized gas flow at a temperature sufficient to deposit the single atomic layer nanoribbon on the substrate via chemical vapor deposition, the single atomic layer nanoribbon having a transition metal dichalcogenide material and the substrate including fluorophlogopite mica, highly oriented pyrolytic graphite, or a combination thereof. Also described are single atomic layer nanoribbons prepared by the method.

Abstract: Aspects of the present disclosure generally relate to catalyst compositions including metal chalcogenides, processes for producing such catalyst compositions, processes for enhancing catalytic active sites in such catalyst compositions, and uses of such catalyst compositions in, e.g., processes for producing conversion products. In an aspect, a process for forming a catalyst composition is provided. The process includes introducing an electrolyte material and an amphiphile material to a metal chalcogenide to form the catalyst composition. In another aspect, a catalyst composition is provided. The catalyst composition includes a metal chalcogenide, an electrolyte material, and an amphiphile material. Devices for hydrogen evolution reaction are also provided.

Abstract: Aspects of the present disclosure generally relate to catalyst compositions including metal chalcogenides, processes for producing such catalyst compositions, processes for enhancing catalytic active sites in such catalyst compositions, and uses of such catalyst compositions in, e.g., processes for producing conversion products. In an aspect, a process for forming a catalyst composition is provided. The process includes introducing an electrolyte material and an amphiphile material to a metal chalcogenide to form the catalyst composition. In another aspect, a catalyst composition is provided. The catalyst composition includes a metal chalcogenide, an electrolyte material, and an amphiphile material. Devices for hydrogen evolution reaction are also provided.

Abstract: Aspects of the present disclosure generally relate to catalyst compositions, processes for producing such catalyst compositions, and uses of such catalyst compositions. In an embodiment, a composition is provided. The composition includes an electrolyte material or an ion thereof, an amphiphile material or an ion thereof, and a metal component, the metal component comprising an alloy having the formula (M1)a(M2)b, wherein M1 is a Group 10-11 metal of the periodic table of the elements, M2 is a first Group 8-11 metal of the periodic table of the elements, M1 and M2 are different, and a and b are positive numbers. In another embodiment, a device is provided that includes an electrolyte material or ion thereof, an amphiphile material or ion thereof, and a metal component disposed on an electrode, the metal component comprising a bimetallic nanoframe, a trimetallic nanoframe, or a combination thereof.

Abstract: The present disclosure generally relates to bilayer metal dichalcogenides, to processes for forming bilayer metal dichalcogenides, and to uses of bilayer metal dichalcogenides in devices for quantum electronics. In an aspect, a device is provided. The device includes a gate electrode, a substrate disposed over at least a portion of the gate electrode, and a bottom layer including a first metal dichalcogenide, the bottom layer disposed over at least a portion of the substrate. The device further includes a top layer including a second metal dichalcogenide, the top layer disposed over at least a portion of the bottom layer, the first metal dichalcogenide and the second metal dichalcogenide being the same or different. The device further includes a source electrode and a drain electrode disposed over at least a portion of the top layer.

Abstract: A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

Abstract: A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

Abstract: Aspects of the present disclosure generally relate to catalyst compositions including metal chalcogenides, processes for producing such catalyst compositions, processes for enhancing catalytic active sites in such catalyst compositions, and uses of such catalyst compositions in, e.g., processes for producing conversion products. In an aspect, a process for forming a catalyst composition is provided. The process includes introducing an electrolyte material and an amphiphile material to a metal chalcogenide to form the catalyst composition. In another aspect, a catalyst composition is provided. The catalyst composition includes a metal chalcogenide, an electrolyte material, and an amphiphile material. Devices for hydrogen evolution reaction are also provided.

Abstract: A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

Abstract: A method of forming a single atomic layer nanoribbon on a substrate by subjecting two or more precursor powders to a moisturized gas flow at a temperature sufficient to deposit the single atomic layer nanoribbon on the substrate via chemical vapor deposition, the single atomic layer nanoribbon having a transition metal dichalcogenide material and the substrate including fluorophlogopite mica, highly oriented pyrolytic graphite, or a combination thereof. Also described are single atomic layer nanoribbons prepared by the method.

Abstract: A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

Abstract: A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

Abstract: A method for direct growth of a patterned transition metal dichalcogenide monolayer, the method including the steps of providing a substrate covered by a mask, the mask having a pattern defined by one or more shaped voids; thermally depositing a salt on the substrate through the one or more shaped voids such that a deposited salt is provided on the substrate in the pattern of the mask; and thermally co-depositing a transition metal oxide and a chalcogen onto the deposited salt to form the patterned transition metal dichalcogenide monolayer having the pattern of the mask. Also provided is a patterned transition metal dichalcogenide monolayer prepared according to the method.

Abstract: A method for direct growth of a patterned transition metal dichalcogenide monolayer, the method including the steps of providing a substrate covered by a mask, the mask having a pattern defined by one or more shaped voids; thermally depositing a salt on the substrate through the one or more shaped voids such that a deposited salt is provided on the substrate in the pattern of the mask; and thermally co-depositing a transition metal oxide and a chalcogen onto the deposited salt to form the patterned transition metal dichalcogenide monolayer having the pattern of the mask. Also provided is a patterned transition metal dichalcogenide monolayer prepared according to the method.

Abstract: Embodiments of the present disclosure relate to visible luminescent phosphors, visible luminescent nanobelt phosphors, methods of making visible luminescent phosphors, methods of making visible luminescent nanobelt phosphors, mixtures of visible luminescent phosphors, methods of using visible luminescent phosphors, waveguides including visible luminescent phosphors, white light emitting phosphors, and the like.

Abstract: Embodiments of the present disclosure relate to visible luminescent phosphors, visible luminescent nanobelt phosphors, methods of making visible luminescent phosphors, methods of making visible luminescent nanobelt phosphors, mixtures of visible luminescent phosphors, methods of using visible luminescent phosphors, waveguides including visible luminescent phosphors, white light emitting phosphors, and the like.