Abstract: A display panel includes an array substrate having a first substrate, a gate line, a data line, and a thin film transistor (TFT); and a plurality of sub-pixel regions defined by the gate and data lines; and an opposite substrate including a second substrate, a plurality of additional electrodes arranged on a side of the second substrate facing the array substrate; at least one sub-pixel region including at least one of: a first overlap region at an intersection region by the gate and data lines, a second overlap region between the TFT gate and source electrodes, or a third overlap region between the TFT gate and drain electrodes; and an orthographic projection of the additional electrodes on the first substrate substantially overlaps with orthographic projections of at least one of the first, second, or third overlap regions on the first substrate.

Abstract: An array substrate and a method of manufacturing the same are provided. The method of manufacturing an array substrate includes: forming a black matrix and an organic insulating pattern on a base substrate with a thin film transistor formed thereon, wherein the black matrix and the organic material pattern are formed by using an identical mask.

Abstract: A display panel includes an array substrate having a first substrate, a gate line, a data line, and a thin film transistor (TFT); and a plurality of sub-pixel regions defined by the gate and data lines; and an opposite substrate including a second substrate, a plurality of additional electrodes arranged on a side of the second substrate facing the array substrate; at least one sub-pixel region including at least one of: a first overlap region at an intersection region by the gate and data lines, a second overlap region between the TFT gate and source electrodes, or a third overlap region between the TFT gate and drain electrodes; and an orthographic projection of the additional electrodes on the first substrate substantially overlaps with orthographic projections of at least one of the first, second, or third overlap regions on the first substrate.

Abstract: Embodiments of the present invention provide a display substrate, a fabricating method thereof, and a display panel. The display substrate includes a substrate, a display structure layer disposed on the substrate, and an alignment layer. A grating polarizing layer is disposed in the display structure layer, and an optical alignment direction of the alignment layer is parallel to or perpendicular to a transmission axis direction of the grating polarizing layer.

Abstract: An array substrate and a method of manufacturing the same are provided. The method of manufacturing an array substrate includes: forming a black matrix and an organic insulating pattern on a base substrate with a thin film transistor formed thereon, wherein the black matrix and the organic material pattern are formed by using an identical mask.

Abstract: The present disclosure provides a method for manufacturing a thermal insulation film, a thermal insulation structure, and a display device. The method for manufacturing the thermal insulation film includes: providing a substrate; forming a sacrificial layer on the substrate; forming a thermal insulation layer on the sacrificial layer, the thermal insulation layer including at least one opening capable of exposing a portion of the sacrificial layer; and etching the sacrificial layer through the opening, so as to form a plurality of hollow holes between the thermal insulation layer and the substrate. A method for manufacturing the thermal insulation film according to the present disclosure is used for manufacturing a thermal insulation film.

Abstract: Embodiments of the present invention provide a display substrate, a fabricating method thereof, and a display panel. The display substrate includes a substrate, a display structure layer disposed on the substrate, and an alignment layer. A grating polarizing layer is disposed in the display structure layer, and an optical alignment direction of the alignment layer is parallel to or perpendicular to a transmission axis direction of the grating polarizing layer.

Abstract: The present disclosure provides a method for manufacturing a thermal insulation film, a thermal insulation structure, and a display device. The method for manufacturing the thermal insulation film includes: providing a substrate; forming a sacrificial layer on the substrate; forming a thermal insulation layer on the sacrificial layer, the thermal insulation layer including at least one opening capable of exposing a portion of the sacrificial layer; and etching the sacrificial layer through the opening, so as to form a plurality of hollow holes between the thermal insulation layer and the substrate. A method for manufacturing the thermal insulation film according to the present disclosure is used for manufacturing a thermal insulation film.

Abstract: Embodiments of the present disclosure relate to the display technical field and provide a thin film transistor and a method for producing the same, an array baseplate, and a display device. The method for producing the thin film transistor includes forming an active layer which includes: forming a plurality of processing regions along a first direction on a substrate, where any two adjacent processing regions have different hydrophilicities and the first direction is parallel with the transmission direction of carriers in the thin film transistor, forming an active layer on the substrate to cover at least part of a junctional region between two adjacent processing regions.

Abstract: The present disclosure provides a touch display substrate and a touch display device, relates to a display field and solves a technical problem of lower sensibility of the touch display device. The touch display substrate comprises a plurality of touch electrodes, wherein the plurality of touch electrodes are divided into at least one touch electrode pair; each of the touch electrode pair includes first and second touch electrodes which are adjacent to each other; the first touch electrode comprises a first bending portion; the second touch electrode comprises second bending portion; and the second bending portions correspond to the first bending portions at positions. The touch display substrate according to the present disclosure may be applied to the touch display device.

Abstract: Embodiments of the invention disclose a thin-film transistor having a channel structure that has an increased width-length ratio and a manufacturing method thereof, a display substrate and a display device. The thin-film transistor comprises a gate, a gate insulation layer and an active layer stacked on a substrate, the active layer is formed therein with a source region, a drain region and a channel region, a surface of the active layer facing the gate insulation layer is at least partially formed with a non-planar surface in the channel region, such that the non-planar surface of the active layer has a tortuous shape in a width direction of the channel region.

Abstract: It is disclosed an etching method, comprising: applying a photoresist layer on a layer to be patterned; forming a photoresist removing region and a photoresist retaining region on the photoresist layer; forming a cross linking material in the photoresist removing region, and making the cross linking material to react with the photoresist retaining region in predefined conditions to form a reacting region; removing the cross linking material, retaining the photoresist retaining region and the reacting region, and etching a layer in a region where the cross linking material is removed; and removing a shielding layer in the photoresist retaining region and the reacting region to form a patterned layer. Conditions for the reaction between the cross linking material and the photoresist are controlled to modify the width of the reacting region, and a CD smaller than the resolution limit of exposure machine is reached without photoresist residual.

Abstract: Embodiments of the invention disclose a thin-film transistor having a channel structure that has an increased width-length ratio and a manufacturing method thereof, a display substrate and a display device. The thin-film transistor comprises a gate, a gate insulation layer and an active layer stacked on a substrate, the active layer is formed therein with a source region, a drain region and a channel region, a surface of the active layer facing the gate insulation layer is at least partially formed with a non-planar surface in the channel region, such that the non-planar surface of the active layer has a tortuous shape in a width direction of the channel region.

Abstract: This invention relates to an apparatus and a method for multistage hierarchical pyrolysis and gasification of solid fuels. The apparatus comprises a feeding device 1, a multistage fluidized bed reactor 6, a residual discharging valve 9, a cyclone 10 and a condenser 11. A gas inlet is provided at the bottom of the multistage fluidized bed reactor 6 and a number of stages of fluidized beds 3 are provided within the multistage fluidized bed 6, wherein the fluidized beds 3 are separated by a number of perforated distributors 5. The top stage fluidized bed 3 is connected with the feeding device 1 and the coal fed thereto is heated by char obtained from pyrolysis in this stage and the mixture of high temperature ascending pyrolysis and gasification gas to undergo pyrolysis reactions at low temperature, thereby to obtain solid particles after preliminary pyrolytic process.

Abstract: This invention relates to an apparatus and a method for multistage hierarchical pyrolysis and gasification of solid fuels. The apparatus comprises a feeding device 1, a multistage fluidized bed reactor 6, a residual discharging valve 9, a cyclone 10 and a condenser 11. A gas inlet is provided at the bottom of the multistage fluidized bed reactor 6 and a number of stages of fluidized beds 3 are provided within the multistage fluidized bed 6, wherein the fluidized beds 3 are separated by a number of perforated distributors 5. The top stage fluidized bed 3 is connected with the feeding device 1 and the coal fed thereto is heated by char obtained from pyrolysis in this stage and the mixture of high temperature ascending pyrolysis and gasification gas to undergo pyrolysis reactions at low temperature, thereby to obtain solid particles after preliminary pyrolytic process.