Abstract: A control method for a series hybrid power system or synergic electric power supply and a control device thereof are disclosed. The control device includes: a generator reference current value generating module and a generator current control module. The generator reference current value generating module is configured to generate a reference current value of a generator according to an actual current value of an energy storage device, a reference current value of the energy storage device, an actual voltage value of a DC bus, and a reference voltage value of the DC bus. The generator current control module is configured to generate a control signal of a rectifier according to the reference current value of the generator, the actual value of any two-phase current of the generator, and an actual angular velocity of the generator, thereby controlling the series hybrid power system or the synergic electric power supply.

Abstract: A control method for a series hybrid power system or synergic electric power supply and a control device thereof are disclosed. The control device includes: a generator reference current value generating module and a generator current control module. The generator reference current value generating module is configured to generate a reference current value of a generator according to an actual current value of an energy storage device, a reference current value of the energy storage device, an actual voltage value of a DC bus, and a reference voltage value of the DC bus. The generator current control module is configured to generate a control signal of a rectifier according to the reference current value of the generator, the actual value of any two-phase current of the generator, and an actual angular velocity of the generator, thereby controlling the series hybrid power system or the synergic electric power supply.

Abstract: A measurement method for a junction-to-case thermal resistance is provided. First, a first transient cooling curve of the chip for the semiconductor device under test (DUT) without grease is measured. Then a second transient cooling curve of the chip for the DUT with grease is measured. A difference ?T of temperature variations of the two transient cooling curves with and without grease is calculated. The temperature of a constant temperature cold plate for fixing the semiconductor DUT is increased by ?T, and a third transient cooling curve of the chip for the DUT with grease is measured again. The first transient cooling curve and the third transient cooling curve are used to calculate the junction-to-case thermal resistance.