Abstract: A semiconductor device having cells is provided, with each cell including a gate. The device includes a gate pad, a gate busbar and gate lines. The busbar connects the gate pad to the gate lines, the gate lines connect the gate busbar to the gates of the cells, and each of the gate lines is disposed along a first axis. The gate busbar includes first portions each disposed along a second axis, and the second axis intersects with the first axis. The first portions are spaced apart from each other to divide the semiconductor device into emitter segments. Lengths of the emitter segments along the first axis changes with distances of the segments from the gate pad, so that gate signals arriving at the gates of the cells from the gate pad via the gate busbar and the gate lines are substantially consistent.

Abstract: A semiconductor device having cells is provided, with each cell including a gate. The device includes a gate pad, a gate busbar and gate lines. The busbar connects the gate pad to the gate lines, the gate lines connect the gate busbar to the gates of the cells, and each of the gate lines is disposed along a first axis. The gate busbar includes first portions each disposed along a second axis, and the second axis intersects with the first axis. The first portions are spaced apart from each other to divide the semiconductor device into emitter segments. Lengths of the emitter segments along the first axis changes with distances of the segments from the gate pad, so that gate signals arriving at the gates of the cells from the gate pad via the gate busbar and the gate lines are substantially consistent.

Abstract: A cell structure of an insulated gate bipolar transistor (IGBT) with a control gate and a carrier storage layer, is provided including: an N-type drift layer with a first surface, an active region on a second surface opposing the first and an N-type storage layer, a P-type body layer and an N-type doped layer sequentially stacked in the active region from the first to the second surface, gate trench bodies, each of which extends from the second to the first surface in a first direction perpendicular to the first surface and contacts the N-type drift layer, and each of the at least three gate trench bodies is a gate trench or a control gate trench. A sidewall of the gate trench is in contact with the active region, and a sidewall of the control gate trench is in contact with the P-type layer but not with the N-type layer.

Abstract: A semiconductor device and a manufacturing method thereof is provided. The device includes a semiconductor layer having a first and second surface opposing each other; a trench gate in the semiconductor layer, extends in a first direction parallel to the first and second surface, and from the first surface to an interior of the layer, and has a gate open end distant from the second surface; a source region of a first conductivity type and a channel region of a second conductivity type, orthographic projections of the source region and the channel region on the second surface at least partially overlap with each other in a depth direction of the trench gate, the source region having a source open end distant from the second surface, and the farther the source open end is from the second surface, the smaller a width of the source open end in the second direction.

Abstract: A semiconductor device and a method for manufacturing the same is provided. The semiconductor device includes: a semiconductor body having a first surface and a second surface, the semiconductor body includes: a depletion region, a drift region having a first conductivity type, an island region having the first conductivity type, a buffer region having the first conductivity type, the drift region is more proximal to the first surface of the semiconductor body than the buffer region, the depletion region is located within the drift region, and the island region is located within the drift region, an ion concentration of the first conductivity type of the island region is higher than an ion concentration of the first conductivity type of the drift region.

Abstract: Disclosed are a multi-stage gravity-type sludge drying apparatus and a sludge drying method using the same. The drying apparatus includes: a dryer, a preheater, a steam generator, a filter, a steam or water separation buffer tank, a steam compressor, a cooling water pump, a sealed discharge device, pipes and valves. The dryer includes several indirect dryer modules. The transportation of sludge in the dryer is achieved by gravity. The inner cavity of respective indirect dryers is filled with high-temperature steam to dry the sludge by indirect heating. The condensate water in the cavity is recycled and fed into the preheater to perform preheating and impurity removal on the wet sludge. The secondary steam generated in the dryer is filtered, compressed and overheated to become a new heat source for indirect heating in the cavity and convection drying at a bottom of the dryer.

Abstract: An IGBT device comprises a super-junction structure arranged in a drift region and formed by a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed. Device cell structures of the IGBT device are formed in an N-type epitaxial layer at the tops of super-junction cells. Each device cell structure comprises a body region, a gate structure and an emitter region. N-type isolation layers having a doping concentration greater than that of the N-type epitaxial layer are formed between the bottom surfaces of the body regions and the top surfaces of the P-type pillars and are used for isolating the body regions from the P-type pillars. The super-junction structure and the N-type isolation layers can increase the current density of the device, decrease the on-state voltage drop of the device and reduce the turn-off loss of the device.

Abstract: A super-junction IGBT device comprises a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed in a horizontal direction. Device cell structures are formed at tops of super-junction cells and each comprise a trench gate having a gate trench striding across an interface of the corresponding P-type pillar and the corresponding N-type pillar. A body region is formed at a top of the corresponding N-type pillar, and a source region is formed on a surface of the body region. The top of each N-type pillar is provided with one body region and two trench gates located on two sides of the body region, and each body region is isolated from the P-type pillars on the two sides of the body region through the corresponding trench gates. The invention further discloses a method for manufacturing a super-junction IGBT device. Self-isolation of the P-type pillars is realized, the on-state current capacity of the device is improved, and the on-state voltage drop of the device is reduced.

Abstract: Disclosed are a multi-stage gravity-type sludge drying apparatus and a sludge drying method using the same. The drying apparatus includes: a dryer, a preheater, a steam generator, a filter, a steam or water separation buffer tank, a steam compressor, a cooling water pump, a sealed discharge device, pipes and valves. The dryer includes several indirect dryer modules. The transportation of sludge in the dryer is achieved by gravity. The inner cavity of respective indirect dryers is filled with high-temperature steam to dry the sludge by indirect heating. The condensate water in the cavity is recycled and fed into the preheater to perform preheating and impurity removal on the wet sludge. The secondary steam generated in the dryer is filtered, compressed and overheated to become a new heat source for indirect heating in the cavity and convection drying at a bottom of the dryer.

Abstract: A super-junction IGBT device comprises a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed in a horizontal direction. Device cell structures are formed at tops of super-junction cells and each comprise a trench gate having a gate trench striding across an interface of the corresponding P-type pillar and the corresponding N-type pillar. A body region is formed at a top of the corresponding N-type pillar, and a source region is formed on a surface of the body region. The top of each N-type pillar is provided with one body region and two trench gates located on two sides of the body region, and each body region is isolated from the P-type pillars on the two sides of the body region through the corresponding trench gates. The invention further discloses a method for manufacturing a super-junction IGBT device. Self-isolation of the P-type pillars is realized, the on-state current capacity of the device is improved, and the on-state voltage drop of the device is reduced.

Abstract: An IGBT device comprises a super-junction structure arranged in a drift region and formed by a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed. Device cell structures of the IGBT device are formed in an N-type epitaxial layer at the tops of super-junction cells. Each device cell structure comprises a body region, a gate structure and a source region. N-type isolation layers having a doping concentration greater than that of the N-type epitaxial layer are formed between the bottom surfaces of the body regions and the top surfaces of the P-type pillars and are used for isolating the body regions from the P-type pillars. The super-junction structure and the N-type isolation layers can increase the current density of the device, decrease the on-state voltage drop of the device and reduce the turn-off loss of the device.