Abstract: The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The manufacturing method of a semiconductor structure includes: providing a substrate having bit line contact regions; and forming a first conductive layer and a second conductive layer in each of the bit line contact regions. In the present disclosure, a first conductive layer and a second conductive layer are formed through two deposition processes separately, and a concentration of doped impurities in the first conductive layer is lower than a concentration of doped impurities in the second conductive layer.

Abstract: A semiconductor structure and a method for forming the same are provided. The method for forming a semiconductor structure includes the following operations. A substrate is provided. A dielectric layer having a first trench is formed on the substrate. A first filling layer is formed for partially filling the first trench. A first mask layer having a first opening is formed on the dielectric layer. The first opening exposes the first filling layer and part of the dielectric layer. The dielectric is etched by taking the first mask layer as a mask to form a second trench. The first filling layer is removed. And, conductive materials are formed in the first trench and the second trench.

Abstract: A method for accurately obtaining a photolithography parameter. In the method, photolithography is performed on a target carrier with different preset photolithography parameters by using a same mask pattern as a mask, to obtain a plurality of target patterns. Each of the target pattern is compared with a standard pattern to obtain an evaluation value, and the target pattern is set as a valid pattern, when the evaluation value corresponding to the target pattern is greater than or equal to a preset value. A Bosung curve is drawn by taking a line width of the valid pattern and a preset photolithography parameter corresponding to the line width as data. The photolithography parameter corresponding to a preset line width is obtained according to the Bosung curve.

Abstract: The present disclosure provides a manufacturing method of a semiconductor structure, and a semiconductor structure. The method includes: providing a substrate, where the substrate has active areas, and grooves or holes each for connecting a bit line structure to the active area are formed on a surface of the substrate; forming a protective layer, where the protective layer covers a bottom and a sidewall of each of the grooves or holes; removing the protective layer located at the bottom of each of the grooves or holes; performing pickling to remove a native oxide on a surface of each of the active areas exposed at the bottom of the grooves or holes, where partial protective layer is retained on the sidewall of each of the grooves or holes after pickling; and forming bit line structures.

Abstract: The present disclosure provides a method of preparing a semiconductor structure and a semiconductor structure, which relate to the field of semiconductors. The method includes: setting a top surface of a second conductive layer to be lower than a top surface of a first conductive layer; setting a top surface of a first initial bit line conductive layer to be higher than a top surface of a second initial bit line conductive layer; etching the first initial bit line conductive layer by a first etching process, and performing the first etching process on a part of the second initial bit line conductive layer; etching the first conductive layer by a second etching process, and etching a remaining part of the second initial bit line conductive layer; and forming a bit line contact structure wrapping a void, widths of parts of the bit line contact structure gradually increasing.

Abstract: The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The manufacturing method of a semiconductor structure includes: providing a substrate having bit line contact regions; and forming a first conductive layer and a second conductive layer in each of the bit line contact regions. In the present disclosure, a first conductive layer and a second conductive layer are formed through two deposition processes separately, and a concentration of doped impurities in the first conductive layer is lower than a concentration of doped impurities in the second conductive layer.

Abstract: A semiconductor structure and a method for forming the same are provided. The method for forming a semiconductor structure includes the following operations. A substrate is provided. A dielectric layer having a first trench is formed on the substrate. A first filling layer is formed for partially filling the first trench. A first mask layer having a first opening is formed on the dielectric layer. The first opening exposes the first filling layer and part of the dielectric layer. The dielectric is etched by taking the first mask layer as a mask to form a second trench. The first filling layer is removed. And, conductive materials are formed in the first trench and the second trench.

Abstract: A method for accurately obtaining a photolithography parameter. In the method, photolithography is performed on a target carrier with different preset photolithography parameters by using a same mask pattern as a mask, to obtain a plurality of target patterns. Each of the target pattern is compared with a standard pattern to obtain an evaluation value, and the target pattern is set as a valid pattern, when the evaluation value corresponding to the target pattern is greater than or equal to a preset value. A Bosung curve is drawn by taking a line width of the valid pattern and a preset photolithography parameter corresponding to the line width as data. The photolithography parameter corresponding to a preset line width is obtained according to the Bosung curve.

Abstract: The present application relates to semiconductor equipment and a method for manufacturing a semiconductor structure. The semiconductor equipment includes: a process chamber for processing a wafer; a gas intake apparatus, configured to introduce gas into the process chamber; and a gas distribution plate, located above the wafer and on a flow path of the gas; and at least part of the gas flows to a surface of the wafer through the gas distribution plate.

Abstract: The present invention comprises methods for making compositions derived from Ilex species, particularly Ilex paraguariensis, having lowered caffeine and tannin concentrations, compositions made by such methods, oral delivery formulations, and methods of use of such compositions. In particular, the present invention comprises methods for making maté compositions that have a predetermined characeteristic, such as a lowered amount of caffeine, elevated amounts of caffeoyls, and/or lowered amounts of tannin compounds compared to the native maté plant materials. Further, the invention comprises methods of additional processing steps tp produce compositions having a predetermined alkaloid ratio or profiles to meet particular considerations for final products. The compositions of the present invention may be processed for specific uses such as tablets or other oral delivery vehicles. These compositions may be used in methods for treatment of physiological and medical conditions.

Abstract: The present invention comprises methods for making compositions derived from Ilex species, particularly Ilex paraguariensis, having lowered caffeine and tannin concentrations, compositions made by such methods, oral delivery formulations, and methods of use of such compositions. In particular, the present invention comprises methods for making maté compositions that have a predetermined characeteristic, such as a lowered amount of caffeine, elevated amounts of caffeoyls, and/or lowered amounts of tannin compounds compared to the native maté plant materials. Further, the invention comprises methods of additional processing steps to produce compositions having a predetermined alkaloid ratio or profiles to meet particular considerations for final products. The compositions of the present invention may be processed for specific uses such as tablets or other oral delivery vehicles. These compositions may be used in methods for treatment of physiological and medical conditions.

Abstract: The present invention comprises compositions comprising essential oils, ginsenosides, and polysaccharides. The present invention comprises methods comprising sequential solvent extraction and polymer absorbent purification to obtain fractions comprising essential oils, ginsenosides, and polysaccharides. The compositions of the present invention may be used in forms such as tablets, gel caps, or fast-dissolve tablets for use as dietary supplements or pharmaceutical compositions. The compositions of the present invention may be used for treatment of cardiovascular diseases, neurodegenerative diseases, inflammatory diseases, hepatic disorders, viral diseases, and cancer.

Abstract: The present invention comprises methods for making compositions derived from Ilex species, particularly Ilex paraguariensis, having lowered caffeine and tannin concentrations, compositions made by such methods, oral delivery formulations, and methods of use of such compositions. In particular, the present invention comprises methods for making maté compositions that have a predetermined characeteristic, such as a lowered amount of caffeine, elevated amounts of caffeoyls, and/or lowered amounts of tannin compounds compared to the native maté plant materials. Further, the invention comprises methods of additional processing steps to produce compositions having a predetermined alkaloid ratio or profiles to meet particular considerations for final products. The compositions of the present invention may be processed for specific uses such as tablets or other oral delivery vehicles. These compositions may be used in methods for treatment of physiological and medical conditions.

Abstract: The present invention comprises methods for making compositions derived from Ilex species, particularly Ilex paraguariensis, having lowered caffeine and tannin concentrations, compositions made by such methods, oral delivery formulations, and methods of use of such compositions. In particular, the present invention comprises methods for making maté compositions that have a predetermined characeteristic, such as a lowered amount of caffeine, elevated amounts of caffeoyls, and/or lowered amounts of tannin compounds compared to the native maté plant materials. Further, the invention comprises methods of additional processing steps tp produce compositions having a predetermined alkaloid ratio or profiles to meet particular considerations for final products. The compositions of the present invention may be processed for specific uses such as tablets or other oral delivery vehicles. These compositions may be used in methods for treatment of physiological and medical conditions.