Patents by Inventor Xun Zheng
Xun Zheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240117007Abstract: The present invention relates to a proliferation enhancer. The enhancer comprises a protein molecule capable of initiating the cellular STATS and/or STAT3 signaling pathway and comprising the intracellular domain, the transmembrane domain and the extracellular domain. The present invention further relates to a lymphocyte expressing the proliferation enhancer and the use thereof as an immunotherapy drug.Type: ApplicationFiled: February 10, 2022Publication date: April 11, 2024Inventors: Zhuo HUANG, Yanni Lin, Xun ZHAO, Xiaocui ZHENG
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Patent number: 11941872Abstract: A progressive localization method for text-to-video clip localization. The method comprises: first, respectively extracting features of two modes, namely a video mode and a text mode by using different feature extraction methods; then progressively selecting different step sizes, and learning the correlation between the video and the text in multiple stages; and finally, training a model in an end-to-end manner based on the correlation loss of each stage. Moreover, the fine time granularity stage is fused with information of the coarse time granularity stage by means of a condition feature update module and up-sampling connection, such that different stages are mutually promoted. Different stages can pay attention to clips with different time granularities, and the model can cope with the situation that the length of a target clip is obviously changed based on the interrelation between the stages.Type: GrantFiled: April 19, 2023Date of Patent: March 26, 2024Assignee: ZHEJIANG GONGSHANG UNIVERSITYInventors: Xun Wang, Jianfeng Dong, Qi Zheng, Jingwei Peng
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Publication number: 20240041803Abstract: A dosage form of lacosamide and a pharmaceutical dosage form thereof is disclosed. The dosage form includes an extended release portion and optionally an immediate release portion. Also provided are methods of providing extended release of lacosamide and treatment of a neurological or psychiatric disease or condition.Type: ApplicationFiled: September 29, 2023Publication date: February 8, 2024Applicant: Shanghai Aucta Pharmaceuticals Co., Ltd.Inventors: Shaoqiong Lyu, Shoufeng Li, Xun Zheng, Zhongqin Wang
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Patent number: 11883374Abstract: A dosage form of lacosamide and a pharmaceutical dosage form thereof is disclosed. The dosage form includes an extended release portion and optionally an immediate release portion. Also provided are methods of providing extended release of lacosamide and treatment of a neurological or psychiatric disease or condition.Type: GrantFiled: May 23, 2022Date of Patent: January 30, 2024Assignee: SHANGHAI AUCTA PHARMACEUTICALS CO., LTD.Inventors: Shaoqiong Lyu, Shoufeng Li, Xun Zheng, Zhongqin Wang
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Publication number: 20230348749Abstract: The invention discloses a hydrophilic anti-fog nano paint for endoscope, which includes the following according to the number of weight parts: plant polyphenols of 1-10 parts, metal ions of 0.1-2 parts, biomass molecules of 0.1-0.5 parts, additives of 10-20 parts and solvents of 250 parts; the paint is coated on the surface of the substrate, and the desired coating can be obtained after drying; the plant polyphenol and metal ions in the invention combine to form the plant polyphenol-metal nano complex, form hydrophilic nano-film with biomass molecules on the surface of the laparoscope, and cooperatively enhance the surface interface hydrophilicity of the lens; the formula of the invention has good biocompatibility, will not cause clinical side effects when it comes into contact with tissues, and can meet the needs of clinical use.Type: ApplicationFiled: July 2, 2023Publication date: November 2, 2023Applicant: CHENGDU HONGBO JIAYUAN BIOTECHNOLOGY CO., LTDInventors: Xun ZHENG, Zhihui LI, Junling GUO, Yunxiang HE, Xiaoling WANG
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Patent number: 11594625Abstract: Described herein are III-N (e.g. GaN) devices having a stepped cap layer over the channel of the device, for which the III-N material is orientated in an N-polar orientation.Type: GrantFiled: February 26, 2020Date of Patent: February 28, 2023Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Matthew Guidry, Stacia Keller, Umesh K. Mishra, Brian Romanczyk, Xun Zheng
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Publication number: 20220280456Abstract: A dosage form of lacosamide and a pharmaceutical dosage form thereof is disclosed. The dosage form includes an extended release portion and optionally an immediate release portion. Also provided are methods of providing extended release of lacosamide and treatment of a neurological or psychiatric disease or condition.Type: ApplicationFiled: May 23, 2022Publication date: September 8, 2022Applicant: Shanghai Aucta Pharmaceuticals Co., Ltd.Inventors: Shaoqiong Lyu, Shoufeng Li, Xun Zheng, Zhongqin Wang
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Patent number: 11337943Abstract: A dosage form of lacosamide and a pharmaceutical dosage form thereof is disclosed. The dosage form includes an extended release portion and optionally an immediate release portion. Also provided are methods of providing extended release of lacosamide and treatment of a neurological or psychiatric disease or condition.Type: GrantFiled: February 17, 2021Date of Patent: May 24, 2022Assignee: SHANGHAI AUCTA PHARMACEUTICALS CO., LTD.Inventors: Shaoqiong Lyu, Shoufeng Li, Xun Zheng, Zhongqin Wang
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Publication number: 20210283076Abstract: A dosage form of lacosamide and a pharmaceutical dosage form thereof is disclosed. The dosage form includes an extended release portion and optionally an immediate release portion. Also provided are methods of providing extended release of lacosamide and treatment of a neurological or psychiatric disease or condition.Type: ApplicationFiled: February 17, 2021Publication date: September 16, 2021Applicant: Shanghai Aucta Pharmaceuticals Co. Ltd.Inventors: Shaoqiong Lyu, Shoufeng Li, Xun Zheng, Zhongqin Wang
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Patent number: 11101379Abstract: A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As illustrated herein, a thin InGaN layer introduced in the channel increases the carrier density, reduces the electric field in the channel, and increases the carrier mobility. The dependence of p on InGaN thickness (tInGaN) and indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT, the electron mobility increased from 606 to 1141 cm2/(V·s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.Type: GrantFiled: November 16, 2017Date of Patent: August 24, 2021Assignee: THEREGENIS OF THE UNIVERSITY OF CALIFORNIAInventors: Brian Romanczyk, Haoran Li, Elaheh Ahmadi, Steven Wienecke, Matthew Guidry, Xun Zheng, Stacia Keller, Umesh K. Mishra
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Publication number: 20200273974Abstract: Described herein are III-N (e.g. GaN) devices having a stepped cap layer over the channel of the device, for which the III-N material is orientated in an N-polar orientation.Type: ApplicationFiled: February 26, 2020Publication date: August 27, 2020Applicant: The Regents of the University of CaliforniaInventors: Matthew Guidry, Stacia Keller, Umesh K. Mishra, Brian Romanczyk, Xun Zheng
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Publication number: 20190348532Abstract: A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As illustrated herein, a thin InGaN layer introduced in the channel increases the carrier density, reduces the electric field in the channel, and increases the carrier mobility. The dependence of p on InGaN thickness (tInGaN) and indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT, the electron mobility increased from 606 to 1141 cm2/(V·s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.Type: ApplicationFiled: November 16, 2017Publication date: November 14, 2019Applicant: The Regents of the University of CaliforniaInventors: Brian Romanczyk, Haoran Li, Elaheh Ahmadi, Steven Wienecke, Matthew Guidry, Xun Zheng, Stacia Keller, Umesh K. Mishra