Patents by Inventor Xun Zheng

Xun Zheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240117007
    Abstract: The present invention relates to a proliferation enhancer. The enhancer comprises a protein molecule capable of initiating the cellular STATS and/or STAT3 signaling pathway and comprising the intracellular domain, the transmembrane domain and the extracellular domain. The present invention further relates to a lymphocyte expressing the proliferation enhancer and the use thereof as an immunotherapy drug.
    Type: Application
    Filed: February 10, 2022
    Publication date: April 11, 2024
    Inventors: Zhuo HUANG, Yanni Lin, Xun ZHAO, Xiaocui ZHENG
  • Patent number: 11941872
    Abstract: A progressive localization method for text-to-video clip localization. The method comprises: first, respectively extracting features of two modes, namely a video mode and a text mode by using different feature extraction methods; then progressively selecting different step sizes, and learning the correlation between the video and the text in multiple stages; and finally, training a model in an end-to-end manner based on the correlation loss of each stage. Moreover, the fine time granularity stage is fused with information of the coarse time granularity stage by means of a condition feature update module and up-sampling connection, such that different stages are mutually promoted. Different stages can pay attention to clips with different time granularities, and the model can cope with the situation that the length of a target clip is obviously changed based on the interrelation between the stages.
    Type: Grant
    Filed: April 19, 2023
    Date of Patent: March 26, 2024
    Assignee: ZHEJIANG GONGSHANG UNIVERSITY
    Inventors: Xun Wang, Jianfeng Dong, Qi Zheng, Jingwei Peng
  • Publication number: 20240041803
    Abstract: A dosage form of lacosamide and a pharmaceutical dosage form thereof is disclosed. The dosage form includes an extended release portion and optionally an immediate release portion. Also provided are methods of providing extended release of lacosamide and treatment of a neurological or psychiatric disease or condition.
    Type: Application
    Filed: September 29, 2023
    Publication date: February 8, 2024
    Applicant: Shanghai Aucta Pharmaceuticals Co., Ltd.
    Inventors: Shaoqiong Lyu, Shoufeng Li, Xun Zheng, Zhongqin Wang
  • Patent number: 11883374
    Abstract: A dosage form of lacosamide and a pharmaceutical dosage form thereof is disclosed. The dosage form includes an extended release portion and optionally an immediate release portion. Also provided are methods of providing extended release of lacosamide and treatment of a neurological or psychiatric disease or condition.
    Type: Grant
    Filed: May 23, 2022
    Date of Patent: January 30, 2024
    Assignee: SHANGHAI AUCTA PHARMACEUTICALS CO., LTD.
    Inventors: Shaoqiong Lyu, Shoufeng Li, Xun Zheng, Zhongqin Wang
  • Publication number: 20230348749
    Abstract: The invention discloses a hydrophilic anti-fog nano paint for endoscope, which includes the following according to the number of weight parts: plant polyphenols of 1-10 parts, metal ions of 0.1-2 parts, biomass molecules of 0.1-0.5 parts, additives of 10-20 parts and solvents of 250 parts; the paint is coated on the surface of the substrate, and the desired coating can be obtained after drying; the plant polyphenol and metal ions in the invention combine to form the plant polyphenol-metal nano complex, form hydrophilic nano-film with biomass molecules on the surface of the laparoscope, and cooperatively enhance the surface interface hydrophilicity of the lens; the formula of the invention has good biocompatibility, will not cause clinical side effects when it comes into contact with tissues, and can meet the needs of clinical use.
    Type: Application
    Filed: July 2, 2023
    Publication date: November 2, 2023
    Applicant: CHENGDU HONGBO JIAYUAN BIOTECHNOLOGY CO., LTD
    Inventors: Xun ZHENG, Zhihui LI, Junling GUO, Yunxiang HE, Xiaoling WANG
  • Patent number: 11594625
    Abstract: Described herein are III-N (e.g. GaN) devices having a stepped cap layer over the channel of the device, for which the III-N material is orientated in an N-polar orientation.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: February 28, 2023
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Matthew Guidry, Stacia Keller, Umesh K. Mishra, Brian Romanczyk, Xun Zheng
  • Publication number: 20220280456
    Abstract: A dosage form of lacosamide and a pharmaceutical dosage form thereof is disclosed. The dosage form includes an extended release portion and optionally an immediate release portion. Also provided are methods of providing extended release of lacosamide and treatment of a neurological or psychiatric disease or condition.
    Type: Application
    Filed: May 23, 2022
    Publication date: September 8, 2022
    Applicant: Shanghai Aucta Pharmaceuticals Co., Ltd.
    Inventors: Shaoqiong Lyu, Shoufeng Li, Xun Zheng, Zhongqin Wang
  • Patent number: 11337943
    Abstract: A dosage form of lacosamide and a pharmaceutical dosage form thereof is disclosed. The dosage form includes an extended release portion and optionally an immediate release portion. Also provided are methods of providing extended release of lacosamide and treatment of a neurological or psychiatric disease or condition.
    Type: Grant
    Filed: February 17, 2021
    Date of Patent: May 24, 2022
    Assignee: SHANGHAI AUCTA PHARMACEUTICALS CO., LTD.
    Inventors: Shaoqiong Lyu, Shoufeng Li, Xun Zheng, Zhongqin Wang
  • Publication number: 20210283076
    Abstract: A dosage form of lacosamide and a pharmaceutical dosage form thereof is disclosed. The dosage form includes an extended release portion and optionally an immediate release portion. Also provided are methods of providing extended release of lacosamide and treatment of a neurological or psychiatric disease or condition.
    Type: Application
    Filed: February 17, 2021
    Publication date: September 16, 2021
    Applicant: Shanghai Aucta Pharmaceuticals Co. Ltd.
    Inventors: Shaoqiong Lyu, Shoufeng Li, Xun Zheng, Zhongqin Wang
  • Patent number: 11101379
    Abstract: A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As illustrated herein, a thin InGaN layer introduced in the channel increases the carrier density, reduces the electric field in the channel, and increases the carrier mobility. The dependence of p on InGaN thickness (tInGaN) and indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT, the electron mobility increased from 606 to 1141 cm2/(V·s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: August 24, 2021
    Assignee: THEREGENIS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Brian Romanczyk, Haoran Li, Elaheh Ahmadi, Steven Wienecke, Matthew Guidry, Xun Zheng, Stacia Keller, Umesh K. Mishra
  • Publication number: 20200273974
    Abstract: Described herein are III-N (e.g. GaN) devices having a stepped cap layer over the channel of the device, for which the III-N material is orientated in an N-polar orientation.
    Type: Application
    Filed: February 26, 2020
    Publication date: August 27, 2020
    Applicant: The Regents of the University of California
    Inventors: Matthew Guidry, Stacia Keller, Umesh K. Mishra, Brian Romanczyk, Xun Zheng
  • Publication number: 20190348532
    Abstract: A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As illustrated herein, a thin InGaN layer introduced in the channel increases the carrier density, reduces the electric field in the channel, and increases the carrier mobility. The dependence of p on InGaN thickness (tInGaN) and indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT, the electron mobility increased from 606 to 1141 cm2/(V·s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.
    Type: Application
    Filed: November 16, 2017
    Publication date: November 14, 2019
    Applicant: The Regents of the University of California
    Inventors: Brian Romanczyk, Haoran Li, Elaheh Ahmadi, Steven Wienecke, Matthew Guidry, Xun Zheng, Stacia Keller, Umesh K. Mishra