Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may compare an external list of ping pong handovers or redirections that is maintained by an access point, and an internal list of ping pong handovers or redirections that is maintained by the UE. The UE may identify a ping pong detection criterion, for a handover or redirection between a first network node and a second network node, based, at least in part, on the external list, the internal list, both the external list and the internal list, or neither of the external list nor the internal list indicating a previous ping pong handover or redirection between the first network node and the second network node. Numerous other aspects are described.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive, from a high speed train (HST) cell, a system information block (SIB) indicating an HST flag based at least in part on the UE camping on the HST cell. The UE may disconnect from the HST cell and camping on a non-HST cell based at least in part on a UE mobility in an HST railway. The UE may determine that disconnecting from the non-HST cell and camping on a new HST cell is to be prioritized over remaining on the non-HST cell, based at least in part on the UE being in the HST railway and based at least in part on a priority of HST cells being greater than a priority of non-HST cells. Numerous other aspects are described.

Abstract: A current protection-type semiconductor device includes an internal resistance that may be instantaneously changed from a low resistance to a high resistance when an overload current appears in a circuit, thereby blocking other elements in a surge current protection circuit. The device comprises an (N+)-type semiconductor substrate, and an N-type voltage-sustaining layer arranged above the (N+)-type semiconductor substrate which serves as a main layer of the device for sustaining a voltage. At least one N-type converter area and at least one P-type source body area are arranged on an upper surface of the N-type voltage-sustaining layer. At least one P-type buried layer is further arranged in the N-type voltage-sustaining layer, and the P-type buried layer is surrounded by the N-type voltage-sustaining layer. Under different voltages between two ports of a TBC, the internal resistance of the TBC is switched between two different states of low resistance and high resistance.