Abstract: A method for enhancing a solubility of a plant protein includes: mixing a plant protein and water, and adjusting the pH value of a resulting mixture of the plant protein and water to 10-12 for dissolution of the plant protein, thereby obtaining a swollen plant protein; treating the swollen plant protein through ion exchange until the pH value of the mixture is 7-8, and filtering the mixture, to yield a first supernatant; separating the first supernatant to yield a second supernatant; and drying the second supernatant, to yield a modified plant protein whose solubility is higher than that of the raw plant protein.

Abstract: A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The thin film transistor comprises a copper gate, a gate insulating layer, an active layer, a source, and a drain. The thin film transistor further comprises a copper alloy layer which is arranged on a side of the gate facing the active layer.

Abstract: The present disclosure relates to a thin film transistor, a method for manufacturing a thin film transistor and an array substrate. The thin film transistor comprises an active layer, a source and a drain, the source comprising a source first conductive layer and a source first buffer layer, the drain comprising a drain first conductive layer and a drain first buffer layer; at least a part of an upper surface of the source first buffer layer and at least a part of an upper surface of the drain first buffer layer being in contact with a lower surface of the active layer, at least a part of a side wall of the source first conductive layer and at least a part of a side wall of the drain first conductive layer being in contact with the active layer, the side wall of the source first conductive layer and the side wall of the drain first conductive layer in contact with the active layer being formed with an oxide layer.

Abstract: An embodiment of the present disclosure provides an organic electroluminescent transistor array substrate, including a substrate, and a gate layer, a gate insulating layer, a semiconductor layer, a source layer, a pixel defining layer, an electroluminescent layer and a drain layer formed on the substrate, wherein, the source layer and the drain layer are located in different levels, the source layer includes plural source electrode units corresponding to sub-pixel units respectively, the pixel defining layer includes plural pixel defining units corresponding to the source electrode units respectively, and the respective source electrode units are embedded within the pixel defining units corresponding thereto.

Abstract: A thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display apparatus are provided. The method for manufacturing the TFT includes: forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate; the forming the metal oxide semiconductor active layer includes: forming the metal oxide semiconductor active layer by electrochemical reaction. The method for manufacturing the TFT is applied in the production of the TFT and the array substrate and the display apparatus comprising the TFTs and provides a new method for forming the metal oxide semiconductor active layer.

Abstract: A display substrate, a manufacturing method and a driving method thereof, and a display device are provided. The display substrate includes a substrate, a gate layer disposed on the substrate, a gate insulating layer disposed on the gate layer, a pixel defining layer disposed on the gate insulating layer, the pixel defining layer includes a plurality of defining regions, a light emitting layer in the defining regions of the pixel defining layer disposed on the gate insulating layer, wherein the light emitting layer includes an electron excitation layer, a light excitation layer and a hole excitation layer, and a source/drain layer disposed on the light emitting layer.

Abstract: A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The thin film transistor comprises a copper gate, a gate insulating layer, an active layer, a source, and a drain. The thin film transistor further comprises a copper alloy layer which is arranged on a side of the gate facing the active layer.

Abstract: A bottom emission organic electroluminescence display, a preparation method thereof, and a display apparatus are provided. The display includes a base substrate (100), and at least one dielectric thin film layer group (200) and a thin film transistor (300) that are successively arranged on the base substrate; each dielectric thin film layer group (200) comprising at least two stacked dielectric thin film layers (201, 202, 203), the refractive indices of which are increased progressively from the base substrate towards the thin film transistor.

Abstract: A display substrate, a manufacturing method and a driving method thereof, and a display device are provided. The display substrate includes a substrate, a gate layer disposed on the substrate, a gate insulating layer disposed on the gate layer, a pixel defining layer disposed on the gate insulating layer, the pixel defining layer includes a plurality of defining regions, a light emitting layer in the defining regions of the pixel defining layer disposed on the gate insulating layer, wherein the light emitting layer includes an electron excitation layer, a light excitation layer and a hole excitation layer, and a source/drain layer disposed on the light emitting layer.

Abstract: The present invention discloses a pixel defining layer and a manufacturing method thereof, a display panel and a display device. The pixel defining layer comprises a first pixel defining layer and a second pixel defining layer stacked on the first pixel defining layer, wherein the first pixel defining layer has a plurality of first openings corresponding to light-emitting regions of respective sub-pixels in one-to-one correspondence, the second pixel defining layer has a plurality of second openings corresponding to the first openings in one-to-one correspondence, a cross section of the first opening is in a regular trapezoidal shape which is narrow at top and wide at bottom, and a cross section of the second opening is in an inverted trapezoidal shape which is wide at top and narrow at bottom. The present invention can effectively avoid the short between the anode and the cathode and the open of the cathode.

Abstract: The present disclosure relates to a thin film transistor, a method for manufacturing a thin film transistor and an array substrate. The thin film transistor comprises an active layer, a source and a drain, the source comprising a source first conductive layer and a source first buffer layer, the drain comprising a drain first conductive layer and a drain first buffer layer; at least a part of an upper surface of the source first buffer layer and at least a part of an upper surface of the drain first buffer layer being in contact with a lower surface of the active layer, at least a part of a side wall of the source first conductive layer and at least a part of a side wall of the drain first conductive layer being in contact with the active layer, the side wall of the source first conductive layer and the side wall of the drain first conductive layer in contact with the active layer being formed with an oxide layer.

Abstract: The present disclosure provides an array substrate, including multiple metallic pattern layers which are insulated and spaced from each other. Each metallic pattern layer comprises a metallic piece made of a metallic material. An oxide film is formed on a lateral face of the metallic piece in at least one of the multiple metallic pattern layers and made of an oxide of the metallic material forming the metallic piece. The present disclosure further provides a display device and a method for manufacturing an array substrate.

Abstract: An embodiment of the present disclosure provides an organic electroluminescent transistor array substrate, including a substrate, and a gate layer, a gate insulating layer, a semiconductor layer, a source layer, a pixel defining layer, an electroluminescent layer and a drain layer formed on the substrate, wherein, the source layer and the drain layer are located in different levels, the source layer includes plural source electrode units corresponding to sub-pixel units respectively, the pixel defining layer includes plural pixel defining units corresponding to the source electrode units respectively, and the respective source electrode units are embedded within the pixel defining units corresponding thereto.

Abstract: The present invention discloses a pixel defining layer and a manufacturing method thereof, a display panel and a display device. The pixel defining layer comprises a first pixel defining layer and a second pixel defining layer stacked on the first pixel defining layer, wherein the first pixel defining layer has a plurality of first openings corresponding to light-emitting regions of respective sub-pixels in one-to-one correspondence, the second pixel defining layer has a plurality of second openings corresponding to the first openings in one-to-one correspondence, a cross section of the first opening is in a regular trapezoidal shape which is narrow at top and wide at bottom, and a cross section of the second opening is in an inverted trapezoidal shape which is wide at top and narrow at bottom. The present invention can effectively avoid the short between the anode and the cathode and the open of the cathode.

Abstract: A thin-film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display apparatus are provided. The method for manufacturing the TFT includes: forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate; the forming the metal oxide semiconductor active layer includes: forming the metal oxide semiconductor active layer by electrochemical reaction. The method for manufacturing the TFT is applied in the production of the TFT and the array substrate and the display apparatus comprising the TFTs and provides a new method for forming the metal oxide semiconductor active layer.

Abstract: A bottom emission organic electroluminescence display, a preparation method thereof, and a display apparatus are provided. The display includes a base substrate (100), and at least one dielectric thin film layer group (200) and a thin film transistor (300) that are successively arranged on the base substrate; each dielectric thin film layer group (200) comprising at least two stacked dielectric thin film layers (201, 202, 203), the refractive indices of which are increased progressively from the base substrate towards the thin film transistor.