Patents by Inventor Xuzhou YAN

Xuzhou YAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DYNAMICALLY-BONDED SUPRAMOLECULAR POLYMERS FOR STRETCHABLE BATTERIES
    Publication number: 20220115692
    Abstract: A battery includes: 1) an anode; 2) a cathode; and 3) a solid or gel electrolyte disposed between the anode and the cathode, wherein the electrolyte includes a supramolecular polymer formed of, or including, molecules crosslinked through dynamic bonds, and each of the molecules includes an ionic ally conductive domain.
    Type: Application
    Filed: January 17, 2020
    Publication date: April 14, 2022
    Applicant: The Board of Trustees of the Leland Stanford Junior University
    Inventors: David George Mackanic, Xuzhou Yan, Yi Cui, Zhenan Bao
  • Thin film transistor and thin film transistor array and electronic device
    Patent number: 11075348
    Abstract: Disclosed are a thin film transistor includes a gate electrode, an active layer including a semiconductor material and a first elastomer, a gate insulator between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer, wherein each of the semiconductor material and the first elastomer has a hydrogen bondable moiety, and the semiconductor material and the first elastomer are subjected to a dynamic intermolecular bonding by a hydrogen bond and a thin film transistor array and an electronic device including the same.
    Type: Grant
    Filed: August 7, 2019
    Date of Patent: July 27, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Youngjun Yun, Xuzhou Yan, Jinyoung Oh, Zhenan Bao, Hung-Chin Wu
  • THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR ARRAY AND ELECTRONIC DEVICE
    Publication number: 20210043860
    Abstract: Disclosed are a thin film transistor includes a gate electrode, an active layer including a semiconductor material and a first elastomer, a gate insulator between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer, wherein each of the semiconductor material and the first elastomer has a hydrogen bondable moiety, and the semiconductor material and the first elastomer are subjected to a dynamic intermolecular bonding by a hydrogen bond and a thin film transistor array and an electronic device including the same.
    Type: Application
    Filed: August 7, 2019
    Publication date: February 11, 2021
    Applicants: Samsung Electronics Co., Ltd., THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
    Inventors: Youngjun YUN, Xuzhou YAN, Jinyoung OH, Zhenan BAO, Hung-Chin WU