Patents by Inventor Y.C. KUO

Y.C. KUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11903193
    Abstract: A MOSFET device and method of making, the device including a floating gate layer formed within a trench in a substrate, a tunnel dielectric layer located on sidewalls and a bottom of the trench, a control gate dielectric layer located on a top surface of the floating gate layer, a control gate layer located on a top surface of the control gate dielectric layer and sidewall spacers located on sidewalls of the control gate dielectric layer and the control gate layer.
    Type: Grant
    Filed: July 13, 2022
    Date of Patent: February 13, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chi-Chung Jen, Yu-Chu Lin, Y. C. Kuo, Wen-Chih Chiang, Keng-Ying Liao, Huai-Jen Tung
  • Patent number: 11792981
    Abstract: A MOSFET device and method of making, the device including a floating gate layer formed within a trench in a substrate, a tunnel dielectric layer located on sidewalls and a bottom of the trench, a control gate dielectric layer located on a top surface of the floating gate layer, a control gate layer located on a top surface of the control gate dielectric layer and sidewall spacers located on sidewalls of the control gate dielectric layer and the control gate layer.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: October 17, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chi-Chung Jen, Yu-Chu Lin, Y. C. Kuo, Wen-Chih Chiang, Keng-Ying Liao, Huai-Jen Tung
  • Publication number: 20220352192
    Abstract: A MOSFET device and method of making, the device including a floating gate layer formed within a trench in a substrate, a tunnel dielectric layer located on sidewalls and a bottom of the trench, a control gate dielectric layer located on a top surface of the floating gate layer, a control gate layer located on a top surface of the control gate dielectric layer and sidewall spacers located on sidewalls of the control gate dielectric layer and the control gate layer.
    Type: Application
    Filed: July 13, 2022
    Publication date: November 3, 2022
    Inventors: Chi-Chung JEN, Yu-Chu Lin, Y. C. Kuo, Wen-Chih Chiang, Keng-Ying Liao, Huai-Jen Tung
  • Publication number: 20220059556
    Abstract: A MOSFET device and method of making, the device including a floating gate layer formed within a trench in a substrate, a tunnel dielectric layer located on sidewalls and a bottom of the trench, a control gate dielectric layer located on a top surface of the floating gate layer, a control gate layer located on a top surface of the control gate dielectric layer and sidewall spacers located on sidewalls of the control gate dielectric layer and the control gate layer.
    Type: Application
    Filed: August 24, 2020
    Publication date: February 24, 2022
    Inventors: Chi-Chung JEN, Yu-Chu LIN, Y.C. KUO, Wen-Chih CHIANG, Keng-Ying LIAO, Huai-Jen TUNG
  • Patent number: 6106443
    Abstract: A punching bag includes a base, a punch body and an outside bag. The base includes a base envelope and a weighing member filled in the base envelope. The punch body is disposed above the base, and includes a punch envelope and a fluid filled in the punch envelope. The punch body is lighter than the base. The bag includes a lower enclosing portion filled by the base and having a first joint end with stitching holes, an upper enclosing portion filled by the punch body and having a second joint end with stitching holes, and a cord threading through the stitching holes and fastening together the first and second joint ends.
    Type: Grant
    Filed: May 27, 1999
    Date of Patent: August 22, 2000
    Inventor: James Y. C. Kuo
  • Patent number: RE39372
    Type: Grant
    Filed: August 3, 2004
    Date of Patent: November 7, 2006
    Assignee: Minatsu Taiwan Corp.
    Inventor: James Y. C. Kuo
  • Patent number: D409670
    Type: Grant
    Filed: April 2, 1997
    Date of Patent: May 11, 1999
    Assignee: Nimatsu Taiwan Corporation
    Inventor: James Y. C. Kuo