Patents by Inventor Y.C. KUO

Y.C. KUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220059556
    Abstract: A MOSFET device and method of making, the device including a floating gate layer formed within a trench in a substrate, a tunnel dielectric layer located on sidewalls and a bottom of the trench, a control gate dielectric layer located on a top surface of the floating gate layer, a control gate layer located on a top surface of the control gate dielectric layer and sidewall spacers located on sidewalls of the control gate dielectric layer and the control gate layer.
    Type: Application
    Filed: August 24, 2020
    Publication date: February 24, 2022
    Inventors: Chi-Chung JEN, Yu-Chu LIN, Y.C. KUO, Wen-Chih CHIANG, Keng-Ying LIAO, Huai-Jen TUNG