Patents by Inventor Y.F. Huang

Y.F. Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HIGH VOLTAGE SEMICONDUCTOR DEVICE
    Publication number: 20120146139
    Abstract: A semiconductor device for a high voltage application includes a doped source base region, an N+ source region, a P+ source region and a gate structure. The doped source base region has P-type. The N+ source region extends downwards into the doped source base region. The P+ source region is close to the N+ source region, extends downwards into the doped source base region, and is doped heavier than the doped source base region. The gate structure is coupled to the N+ source region and is near to the P+ source region.
    Type: Application
    Filed: December 8, 2010
    Publication date: June 14, 2012
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Hsuehi Huang, Y.F. Huang, Shih-Chin Lien