Abstract: A method for removing dry film resist (DFR) from a fine pitch solder bump array on a semiconductor wafer provides for pre-soaking the wafer in a chemical bath then turbulently exposing the wafer to a chemical solution, both steps taking place in batch processing with the wafers processed in a vertical position. The wafers are then individually processed through a chemical spinning operation in which a chemical solution is dispensed from a spray nozzle while motion such as spinning is imparted the horizontally disposed wafer. The spin speed of the chemical spraying process may then be increased to accelerate physical removal of residue. Deionized water rinsing and spin-drying provide a solder bump array void of any DFR or other residuals.