Patents by Inventor Ya-Hsi Hwang

Ya-Hsi Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tungsten Fluoride Soak And Treatment For Tungsten Oxide Removal
    Publication number: 20230187204
    Abstract: Provided are methods for pre-cleaning a substrate. A substrate having tungsten oxide (WOx) thereon is soaked in tungsten fluoride (WF6), which reduces the tungsten oxide (WOx) to tungsten (W). Subsequently, the substrate is treated with hydrogen, e.g., plasma treatment or thermal treatment, to reduce the amount of fluorine present so that fluorine does not invade the underlying insulating layer.
    Type: Application
    Filed: June 20, 2022
    Publication date: June 15, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Xiaodong Wang, Kevin Kashefi, Rongjun Wang, Shi You, Keith T. Wong, Yuchen Liu, Ya-Hsi Hwang, Jean Lu
  • High electron mobility transistors with improved heat dissipation
    Patent number: 10312358
    Abstract: III-nitride based high electron mobility transistors (HEMTs), such as AlGaN/GaN HEMTs on Silicon substrates, with improved heat dissipation are described herein. A semiconductor device having improved heat dissipation may include a substrate having a top surface and a bottom surface, a nucleation layer on the top surface of the substrate, a transition layer on the nucleation layer, a buffer layer on the transition layer, a barrier layer on the buffer layer, and a metal layer filling a via hole that extends from the bottom surface of the substrate to a bottom surface of the transition layer.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: June 4, 2019
    Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INCORPORATED
    Inventors: Fan Ren, Stephen John Pearton, Mark E. Law, Ya-Hsi Hwang
  • HIGH ELECTRON MOBILITY TRANSISTORS WITH IMPROVED HEAT DISSIPATION
    Publication number: 20170294528
    Abstract: III-nitride based high electron mobility transistors (HEMTs), such as AlGaN/GaN HEMTs on Silicon substrates, with improved heat dissipation are described herein. A semiconductor device having improved heat dissipation may include a substrate having a top surface and a bottom surface, a nucleation layer on the top surface of the substrate, a transition layer on the nucleation layer, a buffer layer on the transition layer, a barrier layer on the buffer layer, and a metal layer filling a via hole that extends from the bottom surface of the substrate to a bottom surface of the transition layer.
    Type: Application
    Filed: October 2, 2015
    Publication date: October 12, 2017
    Inventors: Fan Ren, Stephen John Pearton, Mark E. Law, Ya-Hsi Hwang