Patents by Inventor Ya-Hsi Hwung

Ya-Hsi Hwung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Copper bump structures having sidewall protection layers
    Patent number: 9093314
    Abstract: A work piece includes a copper bump having a top surface and sidewalls. A protection layer is formed on the sidewalls, and not on the top surface, of the copper bump. The protection layer includes a compound of copper and a polymer, and is a dielectric layer.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: July 28, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jing-Cheng Lin, Ya-Hsi Hwung, Hsin-Yu Chen, Po-Hao Tsai, Yan-Fu Lin, Cheng-Lin Huang, Fang Wen Tsai, Wen-Chih Chiou
  • Copper Bump Structures Having Sidewall Protection Layers
    Publication number: 20150111342
    Abstract: A work piece includes a copper bump having a top surface and sidewalls. A protection layer is formed on the sidewalls, and not on the top surface, of the copper bump.
    Type: Application
    Filed: December 22, 2014
    Publication date: April 23, 2015
    Inventors: Jing-Cheng Lin, Ya-Hsi Hwung, Hsin-Yu Chen, Po-Hao Tsai, Yan-Fu Lin, Cheng-Lin Huang, Fang Wen Tsai, Wen-Chih Chiou
  • Copper bump structures having sidewall protection layers
    Patent number: 8922004
    Abstract: A work piece includes a copper bump having a top surface and sidewalls. A protection layer is formed on the sidewalls, and not on the top surface, of the copper bump. The protection layer includes a compound of copper and a polymer, and is a dielectric layer.
    Type: Grant
    Filed: July 29, 2010
    Date of Patent: December 30, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jing-Cheng Lin, Ya-Hsi Hwung, Hsin-Yu Chen, Po-Hao Tsai, Yan-Fu Lin, Cheng-Lin Huang, Fang Wen Tsai, Wen-Chih Chiou
  • Copper Bump Structures Having Sidewall Protection Layers
    Publication number: 20110304042
    Abstract: A work piece includes a copper bump having a top surface and sidewalls. A protection layer is formed on the sidewalls, and not on the top surface, of the copper bump. The protection layer includes a compound of copper and a polymer, and is a dielectric layer.
    Type: Application
    Filed: July 29, 2010
    Publication date: December 15, 2011
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jing-Cheng Lin, Ya-Hsi Hwung, Hsin-Yu Chen, Po-Hao Tsai, Yan-Fu Lin, Cheng-Lin Huang, Fang Wen Tsai, Wen-Chih Chiou