Abstract: A semiconductor device including a FET includes an isolation insulating layer disposed in a trench of the substrate, a gate dielectric layer disposed over a channel region of the substrate, a gate electrode disposed over the gate dielectric layer, a source and a drain disposed adjacent to the channel region, and an embedded insulating layer disposed below the source, the drain and the gate electrode and both ends of the embedded insulating layer are connected to the isolation insulating layer.

Abstract: A method of setting a designee for a user (designator) in instant messaging is proposed. In the instant messaging, the designator operates a designator-side device to select a contact to be a messaging object corresponding to an object-side device, and select another contact to be a messaging designee corresponding to a designee-side device, causing an instant messaging server to activate a deputy mode. In the deputy mode, when the designee-side device is operated to send a message to the object-side device through the instant messaging server, the instant messaging server transmits the message to the object-side device in the name of the designator-side device, and also transmits the message to the designator-side device.