Abstract: A method for CMP is provided. The method includes the following operations. A semiconductor wafer is received. The semiconductor wafer is polished. In some embodiments, a residue is generated during polishing the semiconductor wafer and the residue attaches to a surface of a conditioning disk disposed on a dresser head. The dresser head and the conditioning disk are moved back and forth between a refuge position and a working region by the dresser arm during polishing the semiconductor wafer. The surface of the conditioning disk is scanned to remove the residue using a laser scanner when the dresser head and the conditioning disk are in refuge position.

Abstract: A method for CMP is provided. The method includes the following operations. A semiconductor wafer is received. The semiconductor wafer is polished. In some embodiments, a residue is generated during polishing the semiconductor wafer and the residue attaches to a surface of a conditioning disk disposed on a dresser head. The dresser head and the conditioning disk are moved back and forth between a refuge position and a working region by the dresser arm during polishing the semiconductor wafer. The surface of the conditioning disk is scanned to remove the residue using a laser scanner when the dresser head and the conditioning disk are in refuge position.

Abstract: A method and system for formation of vertical microvias in an opaque ceramic thin-plate by femtosecond laser pulses are introduced. The method includes (a) thin an opaque ceramic substrate and reduce its thickness to a range of 20-100 ?m to provide the ceramic thin-plate; (b) place the ceramic thin-plate on a carrier; and (c) drill the ceramic thin-plate by the femtosecond laser pulses, wherein the femtosecond laser pulses have the following parameters, including a pulse width <100 fs, a pulse frequency of 1,000˜10,000 Hz, a laser with a central wavelength of 800 nm, and a movable stage with a speed of 20-200 ?m/s. Hence, vertical mirovias with high aspect ratio can be fabricated in an opaque ceramic thin-plate.

Abstract: A fabrication method for solder bump pattern of rear section wafer package is disclosed and the method includes the steps of: (a) pattern-etching the wafer at a passivation layer for the positioning of the solder bump; (b) depositing the entire under bump metal layer,

Abstract: A method of wire bonding of a semiconductor device for resolving oxidation of copper bonding pad is disclosed. The method comprises the steps of exposing the copper bonding pad of a wafer which has been completed with semiconductor circuit fabrication; covering the copper bonding pad of the wafer with a protective anti-oxidization film which will be vaporized when heated; performing wire bonding directly without requiring the removal of the protective film, employing ultrasonic vibration energy, pressurizing deformation energy and heat energy in the course of bonding to vaporize the protective film so that the metal wire and the copper pad form a large area intermetallic compound layer for bonding.