Abstract: Embodiments of a glass wafer for semiconductor fabrication processes are described herein. In some embodiments, a glass wafer includes: a glass substrate comprising: a top surface, a bottom surface opposing the top surface, and an edge surface between the top surface and the bottom surface; a first coating disposed atop the glass substrate, wherein the first coating is a doped crystalline silicon coating having a sheet-resistance of 100 to 1,000,000 ohm per square; and a second coating having one or more layers disposed atop the glass substrate, wherein the second coating comprises a silicon containing coating, wherein the glass wafer has an average transmittance (T) of less than 50% over an entire wavelength range of 400 nm to 1000 nm.

Abstract: A semiconductor device includes a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, a MTJ on the MRAM region, a metal interconnection on the MTJ, and a blocking layer on the metal interconnection. Preferably, the blocking layer includes a stripe pattern according to a top view and the blocking layer could include metal or a dielectric layer.

Abstract: A glass substrate with improved microLED transfer characteristics is disclosed, the glass substrate comprising a first major surface, a second major surface opposite the first major surface, and a thickness therebetween. An electrically functional layer may be disposed on the first major surface. The glass wafer exhibits a waviness with a magnitude less than or equal to about 1 ?m in a spatial wavelength range from about 0.25 mm to about 50 mm.

Abstract: Embodiments are related generally to display devices, and more particularly to displays or display tiles having electrodes that extend from a first surface to a second surface of a substrate.

Abstract: Embodiments of the disclosure relate to a method for fabricating semiconductor-on-insulator (SemOI) electronic components. In the method, a device wafer is bonded to a handling wafer. The device wafer includes a semiconductor device layer and a buried oxide layer. A substrate is adhered to the handling wafer. The substrate is a glass or a ceramic, and bonding occurs at an interface between the semiconductor device layer and the substrate. Material is removed from the device wafer to expose the buried oxide layer. The substrate is debonded from the handling wafer so as to provide an SemOI electronic component including the substrate, the semiconductor device layer, and the buried oxide layer.

Abstract: An article including a support unit, the support unit including a support substrate and a bonding layer such that the bonding layer is bonded to a surface of the support substrate. Furthermore, a total thickness variation TTV across a width of the support unit is about 2.0 microns or less.

Abstract: Embodiments of the disclosure relate to a method for fabricating semiconductor-on-insulator (SemOI) electronic components. In the method, a device wafer is bonded to a handling wafer. The device wafer includes a semiconductor device layer and a buried oxide layer. A substrate is adhered to the handling wafer. The substrate is a glass or a ceramic, and bonding occurs at an interface between the semiconductor device layer and the substrate. Material is removed from the device wafer to expose the buried oxide layer. The substrate is debonded from the handling wafer so as to provide an SemOI electronic component including the substrate, the semiconductor device layer, and the buried oxide layer.

Abstract: Embodiments of a glass wafer for semiconductor fabrication processes are described herein. In some embodiments, a glass wafer includes: a glass substrate comprising: a top surface, a bottom surface opposing the top surface, and an edge surface between the top surface and the bottom surface; a first coating disposed atop the glass substrate, wherein the first coating is a doped crystalline silicon coating having a sheet-resistance of 100 to 1,000,000 ohm per square; and a second coating having one or more layers disposed atop the glass substrate, wherein the second coating comprises a silicon containing coating, wherein the glass wafer has an average transmittance (T) of less than 50% over an entire wavelength range of 400 nm to 1000 nm.

Abstract: A one-pot synthesis of Nb5+-doped TiO2 nanoparticles (NPs) with low cost and high efficiency for dye sensitized solar cells (DSSCs) is disclosed in the present invention. The Nb5+-doped TiO2 NPs with Nb dopants of 0˜5 mol % are prepared by directly mixing TiO2 slurry with Nb2O5 gel obtained by UV treatment of a mixture of NbCl5 powder, ethanol and water in a certain ratio, following by heat treatment without using hydrothermal method. The as-prepared NPs exhibit well-crystallized pure anatase TiO2 phase with uniform particle distribution. The incorporation of Nb5+ leads to a stronger and broader light absorption in visible light range and a decrease of band gap with increasing Nb dopant content, which enhances the efficiencies of light-harvesting and electron injection and suppresses the charge recombination. The present method provides a simple and cost-effective mass-production route to synthesize n-type metallic ion doped TiO2 nanoparticles as excellent photoanode materials.

Abstract: A one-pot synthesis of Nb5+-doped TiO2 nanoparticles (NPs) with low cost and high efficiency for dye sensitized solar cells (DSSCs) is disclosed in the present invention. The Nb5+-doped TiO2 NPs with Nb dopants of 0˜5 mol % are prepared by directly mixing TiO2 slurry with Nb2O5 gel obtained by UV treatment of a mixture of NbCl5 powder, ethanol and water in a certain ratio, following by heat treatment without using hydrothermal method. The as-prepared NPs exhibit well-crystallized pure anatase TiO2 phase with uniform particle distribution. The incorporation of Nb5+ leads to a stronger and broader light absorption in visible light range and a decrease of band gap with increasing Nb dopant content, which enhances the efficiencies of light-harvesting and electron injection and suppresses the charge recombination. The present method provides a simple and cost-effective mass-production route to synthesize n-type metallic ion doped TiO2 nanoparticles as excellent photoanode materials.

Abstract: A method of forming an electrode having an electrochemical catalyst layer is disclosed, which comprises providing a substrate with a conductive layer formed on the surface of a substrate, conditioning the surface of the substrate, immersing the substrate in a solution containing polymer-capped noble metal nanoclusters dispersed therein to form a polymer-protected electrochemical catalyst layer on the conditioned surface of the substrate, and thermally treating the polymer-protected electrochemical catalyst layer at a temperature approximately below 300° C.

Abstract: A method of forming an electrode having an electrochemical catalyst layer is disclosed. The method includes etching a surface of a substrate, followed by immersing the substrate in a solution containing surfactants to form a conditioner layer on the surface of the substrate, and immersing the substrate in a solution containing polymer-capped noble metal nanoclusters dispersed therein to form a polymer-protected electrochemical catalyst layer on the conditioner layer.

Abstract: A method of forming an electrode including an electrochemical catalyst layer is disclosed, which comprises forming a graphitized porous conductive fabric layer, optionally conditioning the graphitized porous conductive fabric layer, and dipping the graphitized porous conductive fabric layer into a solution containing a plurality of polymer-capped noble metal nanoclusters dispersed therein. The polymer-capped noble metal nanoclusters as an electrochemical catalyst layer are adsorbed onto the graphitized porous conductive fabric layer. An electrochemical device with the electrode made thereby is also contemplated.

Abstract: A method of forming an electrode having an electrochemical catalyst layer is disclosed. The method includes etching a surface of a substrate, followed by immersing the substrate in a solution containing surfactants to form a conditioner layer on the surface of the substrate, and immersing the substrate in a solution containing polymer-capped noble metal nanoclusters dispersed therein to form a polymer-protected electrochemical catalyst layer on the conditioner layer.

Abstract: A packaging structure with a box for containing at least a portable electronic device is provided. The box has plates, which are connected to one another and surrounded to form an opening for the portable electronic device passing through, and a lid selectively covering or exposing the opening. First solar cells each fastened on an inner surface of each plate in the box. At least a cable electrically connects the first solar cells and is operated for electrically connecting the portable electronic device.

Abstract: Disclosed herein is a dye-sensitized solar cell. The dye-sensitized solar cell includes a semiconductor electrode with a dye adsorbed thereon; a counter electrode; and an electrolyte composition provided between the semiconductor electrode and the counter electrode; wherein the electrolyte composition comprises an oxidation-reduction mediator and a eutectic ionic liquid including a choline halide or derivatives thereof mixed with alcohols or urea.

Abstract: A method of forming an electrode including an electrochemical catalyst layer is disclosed, which comprises forming a graphitized porous conductive fabric layer, optionally conditioning the graphitized porous conductive fabric layer, and dipping the graphitized porous conductive fabric layer into a solution containing a plurality of polymer-capped noble metal nanoclusters dispersed therein. The polymer-capped noble metal nanoclusters as an electrochemical catalyst layer are adsorbed onto the graphitized porous conductive fabric layer. An electrochemical device with the electrode made thereby is also contemplated.

Abstract: A method of forming an electrode including an electrochemical catalyst layer is disclosed, which comprises forming a graphitized porous conductive fabric layer, optionally conditioning the graphitized porous conductive fabric layer, and dipping the graphitized porous conductive fabric layer into a solution containing polymer-capped noble metal nanoclusters dispersed therein. The polymer-capped noble metal nanoclusters as an electrochemical catalyst layer are adsorbed onto the graphitized porous conductive fabric layer. An electrochemical device with the electrode made thereby is also contemplated.

Abstract: A method of forming an electrode having an electrochemical catalyst layer is disclosed, which comprises providing a substrate with a conductive layer formed on the surface of a substrate, conditioning the surface of the substrate, immersing the substrate in a solution containing polymer-capped noble metal nanoclusters dispersed therein to form a polymer-protected electrochemical catalyst layer on the conditioned surface of the substrate, and thermally treating the polymer-protected electrochemical catalyst layer at a temperature approximately below 300° C.