Patents by Inventor Ya-Lin TSAI

Ya-Lin TSAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetoresistive random access memory structure
    Patent number: 11917923
    Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.
    Type: Grant
    Filed: April 28, 2021
    Date of Patent: February 27, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Ching-Hua Hsu, Si-Han Tsai, Shun-Yu Huang, Chen-Yi Weng, Ju-Chun Fan, Che-Wei Chang, Yi-Yu Lin, Po-Kai Hsu, Jing-Yin Jhang, Ya-Jyuan Hung
  • ALL-SPEED-RANGE PROPELLER HAVING STERN FINS
    Publication number: 20140273673
    Abstract: An all-speed-range propeller having stern fins comprises an all-speed-range propeller installed on a propelling shaft of a boat, and a plurality of stern fins installed between the all-speed-range propeller and a hull of the boat. When the all-speed-range propeller having stern fins is applied to the oblique boat on which the propelling shaft is disposed obliquely, the stern fins directly guide the water flow toward the all-speed-range propeller, so that the uneven inflow caused by the obliquely-designed propelling shaft can be conquered to promote the operating efficiency of the all-speed-range propeller.
    Type: Application
    Filed: March 18, 2013
    Publication date: September 18, 2014
    Applicant: Ship and Ocean Industries R&D Center
    Inventors: Ya-Lin TSAI, Ching-Yeh Hsing, Shang-Sheng Chin, Kuan-Kai Chang