Patents by Inventor Ya-Ling Cheng
Ya-Ling Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240113234Abstract: An integrated chip including a gate layer. An insulator layer is over the gate layer. A channel structure is over the insulator layer. A pair of source/drains are over the channel structure and laterally spaced apart by a dielectric layer. The channel structure includes a first channel layer between the insulator layer and the pair of source/drains, a second channel layer between the insulator layer and the dielectric layer, and a third channel layer between the second channel layer and the dielectric layer. The first channel layer, the second channel layer, and the third channel layer include different semiconductors.Type: ApplicationFiled: January 4, 2023Publication date: April 4, 2024Inventors: Ya-Yun Cheng, Wen-Ling Lu, Yu-Chien Chiu, Chung-Wei Wu, Zhiqiang Wu
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Publication number: 20240090230Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.Type: ApplicationFiled: January 9, 2023Publication date: March 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Ling Lu, Chen-Jun Wu, Ya-Yun Cheng, Sheng-Chih Lai, Yi-Ching Liu, Yu-Ming Lin, Feng-Cheng Yang, Chung-Te Lin
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Patent number: 11930663Abstract: A display panel includes a first substrate, pixel structures, a first common pad, a second substrate, a second common electrode, a display medium and a conductive particle. The pixel structures are disposed on an active area of the first substrate. The first common pad is disposed on a peripheral area of the first substrate, and is electrically connected to first common electrodes of the pixel structures. The second common electrode is disposed on the second substrate. The conductive particle is disposed on the first common pad, and is electrically connected to the first common pad and the second common electrode. The conductive particle includes a core and a conductive film disposed on a surface of the core, where the conductive film has a main portion and raised portions, and a film thickness of each of the raised portions is greater than a film thickness of the main portion.Type: GrantFiled: April 9, 2021Date of Patent: March 12, 2024Assignee: Au Optronics CorporationInventors: Bo-Chen Chen, Yun-Ru Cheng, Ya-Ling Hsu, Chia-Hsuan Pai, Cheng-Wei Huang, Wei-Shan Chao
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Patent number: 10655019Abstract: A coating technique and a priming material are provided. In an exemplary embodiment, the coating technique includes receiving a substrate and applying a priming material to the substrate. The applying of the priming material may include rotating the substrate to disperse the priming material radially on the substrate. In the embodiment, the priming material includes a solvent with at least six carbon atoms per molecule. A film-forming material is applied to the substrate on the priming material, and the application includes rotating the substrate to disperse the film-forming material radially on the substrate. The priming material and the film-forming material are evaporated to leave a component of the film-forming material in a solid form. In various embodiments, the priming material is selected based on at least one of an evaporation rate, a viscosity, or an intermolecular force between the priming material and the film-forming material.Type: GrantFiled: June 30, 2015Date of Patent: May 19, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ya-Ling Cheng, Ching-Yu Chang
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Patent number: 10394126Abstract: One of the broader forms of the present disclosure relates to a method of making a semiconductor device. The method includes exposing a photoresist layer to a radiation source and applying a hardening agent to the photoresist layer. Therefore after applying the hardening agent a first portion of the photoresist layer has a higher glass transition temperature, higher mechanical strength, than a second portion of the photoresist layer.Type: GrantFiled: July 17, 2015Date of Patent: August 27, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ya-Ling Cheng, Ching-Yu Chang, Chien-Wei Wang, Yen-Hao Chen
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Patent number: 10114291Abstract: A method includes forming a first layer over a substrate; forming a patterned photoresist layer over the first layer; applying a solution over the patterned photoresist layer to form a conformal layer over the pattern photoresist layer, wherein the conformal layer further includes a first portion over a top surface of the patterned photoresist layer and second portion extending along sidewalls of the patterned photoresist layer; selectively removing the first portion of the conformal layer formed over the top surface of the patterned photoresist layer; and selectively removing the patterned photoresist layer thereby leaving the second portion of the conformal layer.Type: GrantFiled: March 4, 2016Date of Patent: October 30, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ya-Ling Cheng, Ching-Yu Chang, Chien-Chih Chen, Chun-Kuang Chen, Siao-Shan Wang, Wei-Liang Lin
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Patent number: 9891522Abstract: The present disclosure provides a sensitive material. The sensitive material comprises a copolymer that includes polymer units including a hydrophobic unit; a hydrophilic unit comprising an acid generator; and a connection unit bonded between the hydrophobic unit and the hydrophilic unit, the connection unit comprising an acid-labile group.Type: GrantFiled: July 29, 2015Date of Patent: February 13, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ya-Ling Cheng, Ching-Yu Chang
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Patent number: 9772559Abstract: Methods for performing a photolithographic process are disclosed. The methods facilitate the removal of photosensitive from a wafer after the photosensitive has been used as an etch mask. The photosensitive may be a negative tone photosensitive that undergoes a cross-linking process on exposure to electromagnetic energy. By limiting the cross-linking through a reduced post-exposure bake temperature and/or through reduced cross-linker loading, the photoresist, or at least a portion thereof, may have a reduced solvent strip resistance. Because of the reduced solvent strip resistance, a portion of the photosensitive may be removed using a solvent strip. After the solvent strip, a dry etch may be performed to remove remaining portions of the photoresist.Type: GrantFiled: May 18, 2015Date of Patent: September 26, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ya-Ling Cheng, Ching-Yu Chang, Chien-Chih Chen
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Publication number: 20170256396Abstract: A method includes forming a first layer over a substrate; forming a patterned photoresist layer over the first layer; applying a solution over the patterned photoresist layer to form a conformal layer over the pattern photoresist layer, wherein the conformal layer further includes a first portion over a top surface of the patterned photoresist layer and second portion extending along sidewalls of the patterned photoresist layer; selectively removing the first portion of the conformal layer formed over the top surface of the patterned photoresist layer; andselectively removing the patterned photoresist layer thereby leaving the second portion of the conformal layer.Type: ApplicationFiled: March 4, 2016Publication date: September 7, 2017Inventors: Ya-Ling Cheng, Ching-Yu Chang, Chien-Chih Chen, Chun-Kuang Chen, Siao-Shan Wang, Wei-Liang Lin
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Patent number: 9731231Abstract: A filtering unit is provided which may include a filter cap, a filter basin, a filter or membrane within the filter basin and an enclosed fluid intake channel, which may dispense fluid into the filter basin. The enclosed fluid intake channel may be coupled to the inlet port of the filtering unit and may slope in a downward manner to the bottom of the filter basin. The intake channel may have an open end at the bottom of the filter basin. The open end may be substantially parallel with the filter basin bottom and may dispense fluid into the filter basin. The fluid may flow from the intake channel and into the filter basin in a laminar manner. The fluid may fill the filter basin and flow from the filtering unit through an outlet port of the filtering unit.Type: GrantFiled: March 7, 2013Date of Patent: August 15, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ya-Ling Cheng, Ching-Yu Chang
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Patent number: 9589785Abstract: The present disclosure provides one embodiment of a method. The method includes applying a first cleaning fluid to a substrate, thereby cleaning the substrate and forming a protection layer on the substrate; and applying a removing process to the substrate, thereby removing the protection layer from the substrate. The first cleaning fluid includes a cleaning chemical, a protection additive and a solvent.Type: GrantFiled: August 28, 2014Date of Patent: March 7, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ya-Ling Cheng, Chien-Wei Wang
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Publication number: 20170017158Abstract: One of the broader forms of the present disclosure relates to a method of making a semiconductor device. The method includes exposing a photoresist layer to a radiation source and applying a hardening agent to the photoresist layer. Therefore after applying the hardening agent a first portion of the photoresist layer has a higher glass transition temperature, higher mechanical strength, than a second portion of the photoresist layer.Type: ApplicationFiled: July 17, 2015Publication date: January 19, 2017Inventors: Ya-Ling Cheng, Ching-Yu Chang, Chien-Wei Wang, Yen-Hao Chen
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Publication number: 20170002208Abstract: A coating technique and a priming material are provided. In an exemplary embodiment, the coating technique includes receiving a substrate and applying a priming material to the substrate. The applying of the priming material may include rotating the substrate to disperse the priming material radially on the substrate. In the embodiment, the priming material includes a solvent with at least six carbon atoms per molecule. A film-forming material is applied to the substrate on the priming material, and the application includes rotating the substrate to disperse the film-forming material radially on the substrate. The priming material and the film-forming material are evaporated to leave a component of the film-forming material in a solid form. In various embodiments, the priming material is selected based on at least one of an evaporation rate, a viscosity, or an intermolecular force between the priming material and the film-forming material.Type: ApplicationFiled: June 30, 2015Publication date: January 5, 2017Inventors: Ya-Ling Cheng, Ching-Yu Chang
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Publication number: 20160342087Abstract: The present disclosure provides a sensitive material. The sensitive material comprises a copolymer that includes polymer units including a hydrophobic unit; a hydrophilic unit comprising an acid generator; and a connection unit bonded between the hydrophobic unit and the hydrophilic unit, the connection unit comprising an acid-labile group.Type: ApplicationFiled: July 29, 2015Publication date: November 24, 2016Inventors: Ya-Ling Cheng, Ching-Yu Chang
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Publication number: 20160342092Abstract: Methods for performing a photolithographic process are disclosed. The methods facilitate the removal of photosensitive from a wafer after the photosensitive has been used as an etch mask. The photosensitive may be a negative tone photosensitive that undergoes a cross-linking process on exposure to electromagnetic energy. By limiting the cross-linking through a reduced post-exposure bake temperature and/or through reduced cross-linker loading, the photoresist, or at least a portion thereof, may have a reduced solvent strip resistance. Because of the reduced solvent strip resistance, a portion of the photosensitive may be removed using a solvent strip. After the solvent strip, a dry etch may be performed to remove remaining portions of the photoresist.Type: ApplicationFiled: May 18, 2015Publication date: November 24, 2016Inventors: Ya-Ling Cheng, Ching-Yu Chang, Chien-Chih Chen
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Publication number: 20160059272Abstract: The present disclosure provides one embodiment of a method. The method includes applying a first cleaning fluid to a substrate, thereby cleaning the substrate and forming a protection layer on the substrate; and applying a removing process to the substrate, thereby removing the protection layer from the substrate. The first cleaning fluid includes a cleaning chemical, a protection additive and a solvent.Type: ApplicationFiled: August 28, 2014Publication date: March 3, 2016Inventors: Ya-Ling Cheng, Chien-Wei Wang
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Patent number: 9162188Abstract: A method includes performing a first cleaning step to clean a membrane, wherein during the first cleaning step, a first solvent passes through the membrane. After the first cleaning step, a second cleaning step is performed to clean the membrane. During the second cleaning step, a second solvent passes through the membrane. The first solvent and the second solvent are in different groups among three solvent groups, wherein the three solvent groups include a non-polar solvent group, a polar aprotic solvent group, and a polar protic solvent group.Type: GrantFiled: August 14, 2013Date of Patent: October 20, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ya-Ling Cheng, Ching-Yu Chang
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Publication number: 20150050598Abstract: A method includes performing a first cleaning step to clean a membrane, wherein during the first cleaning step, a first solvent passes through the membrane. After the first cleaning step, a second cleaning step is performed to clean the membrane. During the second cleaning step, a second solvent passes through the membrane. The first solvent and the second solvent are in different groups among three solvent groups, wherein the three solvent groups include a non-polar solvent group, a polar aprotic solvent group, and a polar protic solvent group.Type: ApplicationFiled: August 14, 2013Publication date: February 19, 2015Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ya-Ling Cheng, Ching-Yu Chang
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Publication number: 20140251926Abstract: A filtering unit is provided which may include a filter cap, a filter basin, a filter or membrane within the filter basin and an enclosed fluid intake channel, which may dispense fluid into the filter basin. The enclosed fluid intake channel may be coupled to the inlet port of the filtering unit and may slope in a downward manner to the bottom of the filter basin. The intake channel may have an open end at the bottom of the filter basin. The open end may be substantially parallel with the filter basin bottom and may dispense fluid into the filter basin. The fluid may flow from the intake channel and into the filter basin in a laminar manner. The fluid may fill the filter basin and flow from the filtering unit through an outlet port of the filtering unit.Type: ApplicationFiled: March 7, 2013Publication date: September 11, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ya-Ling Cheng, Ching-Yu Chang