Abstract: A method for assessing acute kidney injury of inpatient includes the following steps. An electronic medical record data of an inpatient is captured by a processor, and the electronic medical record data includes a baseline basic serum creatinine concentration data. A target serum creatinine concentration data and a minimum post-admission serum creatinine concentration data of the inpatient are captured by the processor. A dynamic-increasing value of serum creatinine concentration is calculated to obtain by the processor based on the target serum creatinine concentration data, the baseline basic serum creatinine concentration data and the minimum post-admission serum creatinine concentration data. The dynamic-increasing value of serum creatinine concentration is analyzed by the processor to assess whether the inpatient is an inpatient suffering the acute kidney injury or not.

Abstract: A method for assessing occurrence of heart failure includes the following steps. A heart failure assessment program established is provided. A target ECG signal data of the subject is provided, wherein the target ECG signal data includes a plurality of target heartbeat waveform data and a plurality of target heart rate data. A data pre-processing step is performed, wherein the target ECG signal data is pre-processed by the data processing module so as to obtain a processed target ECG signal data. An analyzing step is performed, wherein the processed target ECG signal data is analyzed by the heart failure assessment program so as to obtain a heart failure occurrence assessing result, and the heart failure occurrence assessing result presents a heart failure occurring condition and the severity of the heart failure of the subject.

Abstract: The embodiments of the present disclosure provide a method of moving an icon. The method includes: displaying a first page of a home screen in the main display area under an icon management mode; when receiving a first operation on the icon in the first page, displaying the icon in the subsidiary display area in response to a first operation; switching the first page to a second page of the home screen and displaying the second page; and displaying the icon in the second page in response to a second operation, when the second operation is received. The embodiments of the present disclosure solve the problems of high operation difficulty and low operation efficiency when moving icons in the related art.

Abstract: The embodiments of the present disclosure provide a method of moving an icon. The method includes: displaying a first page of a home screen in the main display area under an icon management mode; when receiving a first operation on the icon in the first page, displaying the icon in the subsidiary display area in response to a first operation; switching the first page to a second page of the home screen and displaying the second page; and displaying the icon in the second page in response to a second operation, when the second operation is received. The embodiments of the present disclosure solve the problems of high operation difficulty and low operation efficiency when moving icons in the related art.

Abstract: A three-dimensional (3D) depth sensor may include: a plurality of light sources configured to irradiate light to an object, the light having different center wavelengths; an optical shutter configured to allow reflected light reflected from the object to pass through; and an image sensor configured to filter the reflected light having passed through the optical shutter and detect the filtered light.

Abstract: A wireless communication device and an antenna control method thereof are disclosed. The wireless communication device has a plurality of antennas, a received signal strength indicator detecting module and a control module. The wireless communication device signally communicates with an AP-router via the plurality of antennas. The received signal strength indicator detecting module individually detects a received signal strength indicator of each antenna and the AP-router. The control module assigns the antenna with the strongest received signal strength indicator among the plurality of antennas to be the main data transmission antenna and switches off at least one of the others of the plurality of antennas.

Abstract: A wireless communication device and an antenna control method thereof are disclosed. The wireless communication device has a plurality of antennas, a received signal strength indicator detecting module and a control module. The wireless communication device signally communicates with an AP-router via the plurality of antennas. The received signal strength indicator detecting module individually detects a received signal strength indicator of each antenna and the AP-router. The control module assigns the antenna with the strongest received signal strength indicator among the plurality of antennas to be the main data transmission antenna and switches off at least one of the others of the plurality of antennas.

Abstract: A method and corresponding apparatus include extracting a movement trajectory feature of an object from an input video. The method and corresponding apparatus also include coding the extracted movement trajectory feature, and determining a type of a movement of the object based on the coded movement trajectory feature.

Abstract: An image capturing apparatus and an image capturing method are provided. The image capturing apparatus includes an image capturing unit configured to capture an image; and a controller connected to the image capturing unit, wherein the controller is configured to obtain a background image with depth information, position a three-dimensional (3D) virtual image representing a target object in the background image based on the depth information, and control the image capturing unit to capture the target object based on a difference between the target object viewed from the image capturing apparatus and the 3D virtual image in the background image.

Abstract: A crucible structure is adapted for manufacturing a silicon crystal structure. The crucible structure includes a crucible body and a release coating layer. A material of the crucible body includes silicon dioxide. The release coating layer directly covers the crucible body, and a material of the release coating layer includes barium silicate. The barium silicate is a continuous film to contact the silicon crystal structure, and a thickness of the release coating layer is between 35 ?m and 350 ?m.

Abstract: A three-dimensional (3D) depth sensor may include: a plurality of light sources configured to irradiate light to an object, the light having different center wavelengths; an optical shutter configured to allow reflected light reflected from the object to pass through; and an image sensor configured to filter the reflected light having passed through the optical shutter and detect the filtered light.

Abstract: A method for manufacturing a polycrystalline silicon ingot includes steps of: a) melting a silicon material in a container disposed in a thermal field to form a molten silicon; b) controlling the thermal field to provide heat to the molten silicon from above the container and to solidify a portion of the molten silicon contacting a base part and at least a portion of a wall part proximate to the base part of the container to form a solid silicon crystalline isolation layer; and c) controlling the thermal field to continuously provide heat to the rest of the molten silicon from above the container and to solidify the rest of the molten silicon gradually from a bottom to a top of the rest of the molten silicon to form a polycrystalline silicon ingot.

Abstract: A method for manufacturing a polycrystalline silicon ingot includes steps of: a) melting a silicon material in a container disposed in a thermal field to form a molten silicon; b) controlling the thermal field to provide heat to the molten silicon from above the container and to solidify a portion of the molten silicon contacting a base part and at least a portion of a wall part proximate to the base part of the container to form a solid silicon crystalline isolation layer; and c) controlling the thermal field to continuously provide heat to the rest of the molten silicon from above the container and to solidify the rest of the molten silicon gradually from a bottom to a top of the rest of the molten silicon to form a polycrystalline silicon ingot.

Abstract: An image capturing apparatus and an image capturing method are provided. The image capturing apparatus includes an image capturing unit configured to capture an image; and a controller connected to the image capturing unit, wherein the controller is configured to obtain a background image with depth information, position a three-dimensional (3D) virtual image representing a target object in the background image based on the depth information, and control the image capturing unit to capture the target object based on a difference between the target object viewed from the image capturing apparatus and the 3D virtual image in the background image.

Abstract: A method and corresponding apparatus include extracting a movement trajectory feature of an object from an input video. The method and corresponding apparatus also include coding the extracted movement trajectory feature, and determining a type of a movement of the object based on the coded movement trajectory feature.

Abstract: A method for manufacturing a polycrystalline silicon ingot includes steps of: a) melting a silicon material in a container disposed in a thermal field to form a molten silicon; b) controlling the thermal field to provide heat to the molten silicon from above the container and to solidify a portion of the molten silicon contacting a base part and at least a portion of a wall part proximate to the base part of the container to form a solid silicon crystalline isolation layer; and c) controlling the thermal field to continuously provide heat to the rest of the molten silicon from above the container and to solidify the rest of the molten silicon gradually from a bottom to a top of the rest of the molten silicon to form a polycrystalline silicon ingot.

Abstract: In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.

Abstract: An approach is provided for a method to manufacture a crystalline silicon ingot. The method comprises providing a mold formed for melting and cooling a silicon feedstock by using a directional solidification process, disposing a barrier layer inside the mold, disposing one or more silicon crystal seeds on the barrier layer, loading the silicon feedstock on the silicon crystal seeds, heating the mold to obtain a silicon melt, and cooling the mold by the directional solidification process to solidify the silicon melt into a silicon ingot. The mold is heated until the silicon feedstock is fully melted and the silicon crystal seeds are at least partially melted.

Abstract: An approach is provided for a method to manufacture a crystalline silicon ingot. The method comprises providing a mold formed for melting and cooling a silicon feedstock by using a directional solidification process, disposing a barrier layer inside the mold, disposing one or more silicon crystal seeds on the barrier layer, loading the silicon feedstock on the silicon crystal seeds, heating the mold to obtain a silicon melt, and cooling the mold by the directional solidification process to solidify the silicon melt into a silicon ingot. The mold is heated until the silicon feedstock is fully melted and the silicon crystal seeds are at least partially melted.

Abstract: In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.