Patents by Inventor Ya-Lun Tsai

Ya-Lun Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11578749
    Abstract: A self-tapping screw for use in securing at least two materials together. The self-tapping screw may include a screw cap that receives a screw body to reinforce the strength of the screw head. The screw cap is composed of a zinc-aluminum alloy that may be die casted and provides additional strength and hardness to the attached screw body. The screw cap has a rolled flange that helps to securely retain the flat rim of the attached screw body.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: February 14, 2023
    Assignee: Clarcorp Industrial Sales, Inc.
    Inventors: Hsin-Te Tsai, Ya-Lun Tsai
  • Publication number: 20210079945
    Abstract: A self-tapping screw for use in securing at least two materials together. The self-tapping screw may include a screw cap that receives a screw body to reinforce the strength of the screw head. The screw cap is composed of a zinc-aluminum alloy that may be die casted and provides additional strength and hardness to the attached screw body. The screw cap has a rolled flange that helps to securely retain the flat rim of the attached screw body.
    Type: Application
    Filed: September 17, 2020
    Publication date: March 18, 2021
    Inventors: Hsin-Te Tsai, Ya-Lun Tsai
  • Patent number: 7780863
    Abstract: A waveguide has a hollow center. The waveguide has dielectric tubes which have a geometric arrangement, like a triangle-lattice arrangement. A laser transmitted in the waveguide is confined and is emitted out with a narrow expending angle. Hence, the laser is emitted straightly forwarded and has a low power loss. The present invention is suitable for using in a high-power laser and obtaining a directive microwave.
    Type: Grant
    Filed: June 6, 2007
    Date of Patent: August 24, 2010
    Assignee: National Central University
    Inventors: Chii-Chang Chen, Ya-Lun Tsai, Ching-Yi Chen, Jenq-Yang Chang
  • Publication number: 20080251497
    Abstract: A waveguide has a hollow center. The waveguide has dielectric tubes which have a geometric arrangement, like a triangle-lattice arrangement. A laser transmitted in the waveguide is confined and is emitted out with a narrow expending angle. Hence, the laser is emitted straightly forwarded and has a low power loss. The present invention is suitable for using in a high-power laser and obtaining a directive microwave.
    Type: Application
    Filed: June 6, 2007
    Publication date: October 16, 2008
    Applicant: National Central University
    Inventors: Chii-Chang Chen, Ya-Lun Tsai, Ching-Yi Chen, Jenq-Yang Chang
  • Publication number: 20080080814
    Abstract: A silicon bulk-micromachining technology is used to fabricate a GMR filter by exploiting the structure of a suspended silicon nitride (SiNx) membrane on the silicon substrate. A first silicon nitride (SiNx) thin film and a second silicon nitride (SiNx) thin film are formed on opposite sides of the silicon substrate. A first opening is defined in the first silicon nitride (SiNx) thin film, and a grating structure is defined in the second silicon nitride (SiNx) thin film. By etching off a portion of the silicon substrate exposed from the first opening until a portion of the second silicon nitride (SiNx) thin film is exposed from the first opening, a light path space is defined.
    Type: Application
    Filed: April 27, 2007
    Publication date: April 3, 2008
    Applicant: NATIONAL CENTRAL UNIVERSITY
    Inventors: Jenq-Yang Chang, Mount-Learn Wu, Che-Lung Hsu, Chih-Ming Wang, Yung-Chih Liu, Yue-Hong Chou, Ya-Lun Tsai, Chien-Chieh Lee
  • Patent number: 7352932
    Abstract: A silicon bulk-micromachining technology is used to fabricate a GMR filter by exploiting the structure of a suspended silicon nitride (SiNx) membrane on the silicon substrate. A first silicon nitride (SiNx) thin film and a second silicon nitride (SiNx) thin film are formed on opposite sides of the silicon substrate. A first opening is defined in the first silicon nitride (SiNx) thin film, and a grating structure is defined in the second silicon nitride (SiNx) thin film. By etching off a portion of the silicon substrate exposed from the first opening until a portion of the second silicon nitride (SiNx) thin film is exposed from the first opening, a light path space is defined.
    Type: Grant
    Filed: April 27, 2007
    Date of Patent: April 1, 2008
    Assignee: National Central University
    Inventors: Jenq-Yang Chang, Mount-Learn Wu, Che-Lung Hsu, Chih-Ming Wang, Yung-Chih Liu, Yue-Hong Chou, Ya-Lun Tsai, Chien-Chieh Lee