Abstract: A method of manufacturing a positive electrode material has the steps of synthesizing an iron metal in a phosphoric acid solution to form an iron phosphate dispersion solution; adding a vanadium pentoxide (V2O5), a non-ionic surfactant and a carbon source to the iron phosphate dispersion solution; and adding a lithium salt to the iron phosphate dispersion solution and then grinding and dispersing it to produce a positive electrode material. By regulating the timing of the addition of vanadium pentoxide (V2O5), the present invention enables the battery made of the positive electrode material to have the advantage of higher battery performance.

Abstract: Provided is an anti-fuse memory including a anti-fuse memory cell including an isolation structure, a select gate, first and second gate insulating layers, an anti-fuse gate, and first, second and third doped regions. The isolation structure is disposed in a substrate. The select gate is disposed on the substrate. The first gate insulating layer is disposed between the select gate and the substrate. The anti-fuse gate is disposed on the substrate and partially overlapped with the isolation structure. The second gate insulating layer is disposed between the anti-fuse gate and the substrate. The first doped region and the second doped region are disposed in the substrate at opposite sides of the select gate, respectively, wherein the first doped region is located between the select gate and the anti-fuse gate. The third doped region is disposed in the substrate and located between the first doped region and the isolation structure.

Abstract: A radio frequency (RF) circuit includes a first microchip for transmitting RF signal, a second microchip, two resistors and at least two signal lines. Each signal line has opposite first and second ends, and each first end of each signal line is connected to the first microchip and each second end of each signal line is connected to the second microchip. Each signal line defines first and second gaps, the first gaps are adjacent to the first microchip and the second gaps are adjacent to the second microchip. The two resistors are selectively located at the gaps of any one signal line, whereby the first microchip and the second microchip are connected to each other through the signal line and the resistors to form a connection path.

Abstract: A radio frequency (RF) circuit includes a first microchip for transmitting RF signal, a second microchip, two resistors and at least two signal lines. Each signal line has opposite first and second ends, and each first end of each signal line is connected to the first microchip and each second end of each signal line is connected to the second microchip. Each signal line defines first and second gaps, the first gaps are adjacent to the first microchip and the second gaps are adjacent to the second microchip. The two resistors are selectively located at the gaps of any one signal line, whereby the first microchip and the second microchip are connected to each other through the signal line and the resistors to form a connection path.