Patents by Inventor Ya-Ping Tseng

Ya-Ping Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for exposure of a phase shift mask
    Patent number: 8563227
    Abstract: The present disclosure provides a method of making a mask. The method includes providing a substrate having a first attenuating layer on the substrate and a first imaging layer on the first attenuating layer; performing a first exposure to the first imaging layer using a first radiation energy in writing mode; performing a first etching to the first attenuating layer; performing a second etching to the substrate; forming a second imaging layer on the first attenuating layer and the substrate; performing a second exposure to the second imaging layer using a light energy and another mask; and performing a third etching to the first attenuating layer after the second exposure.
    Type: Grant
    Filed: October 15, 2012
    Date of Patent: October 22, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Ming Chen, Ya-Ping Tseng, Ming-Tao Ho
  • Method and system for exposure of a phase shift mask
    Patent number: 8288081
    Abstract: The present disclosure provides a method of making a mask. The method includes providing a substrate having a first attenuating layer on the substrate and a first imaging layer on the first attenuating layer; performing a first exposure to the first imaging layer using a first radiation energy in writing mode; performing a first etching to the first attenuating layer; performing a second etching to the substrate; forming a second imaging layer on the first attenuating layer and the substrate; performing a second exposure to the second imaging layer using a light energy and another mask; and performing a third etching to the first attenuating layer after the second exposure.
    Type: Grant
    Filed: April 2, 2007
    Date of Patent: October 16, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Ming Chen, Ya-Ping Tseng, Ming-Tao Ho
  • METHOD AND SYSTEM FOR EXPOSURE OF A PHASE SHIFT MASK
    Publication number: 20080241707
    Abstract: The present disclosure provides a method of making a mask. The method includes providing a substrate having a first attenuating layer on the substrate and a first imaging layer on the first attenuating layer; performing a first exposure to the first imaging layer using a first radiation energy in writing mode; performing a first etching to the first attenuating layer; performing a second etching to the substrate; forming a second imaging layer on the first attenuating layer and the substrate; performing a second exposure to the second imaging layer using a light energy and another mask; and performing a third etching to the first attenuating layer after the second exposure.
    Type: Application
    Filed: April 2, 2007
    Publication date: October 2, 2008
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Ming Chen, Ya-Ping Tseng, Ming-Tao Ho