Patents by Inventor Ya-Tang Chiang

Ya-Tang Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FINFET DEVICE WITH STACKED GERMANIUM AND SILICON CHANNEL
    Publication number: 20180366546
    Abstract: A semiconductor device includes a fin-like structure. The fin-like structure includes a bottom layer formed of silicon and at least a top layer formed of germanium. The semiconductor device further includes a gate stack feature overlaying a central upper portion of the fin-like structure, wherein the gate stack is in contact with a top surface and sidewalls of the top layer, and at least part of sidewalls of the bottom layer.
    Type: Application
    Filed: June 20, 2017
    Publication date: December 20, 2018
    Inventors: Cheng-Han SUNG, Ya-Tang Chiang