Patents by Inventor Ya-Tung Cherng

Ya-Tung Cherng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride based semiconductor laser diode device with a bar mask
    Patent number: 7233610
    Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.
    Type: Grant
    Filed: May 27, 2005
    Date of Patent: June 19, 2007
    Assignee: Chung-Shan Institute of Science and Technology
    Inventors: Wen-How Lan, Yuh-Der Shiang, Jia-Ching Lin, Ker-Jun Lin, Kai-Fung Perng, Ya-Tung Cherng
  • Nitride based semiconductor laser diode device with a bar mask
    Patent number: 7126972
    Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.
    Type: Grant
    Filed: June 12, 2003
    Date of Patent: October 24, 2006
    Assignee: Chung-Shan Institute of Science and Technology
    Inventors: Wen-How Lan, Yuh-Der Shiang, Jia-Ching Lin, Ker-Jun Lin, Kai-Fung Perng, Ya-Tung Cherng
  • NITRIDE BASED SEMICONDUCTOR LASER DIODE DEVICE WITH A BAR MASK
    Publication number: 20050199893
    Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.
    Type: Application
    Filed: May 27, 2005
    Publication date: September 15, 2005
    Inventors: Wen-How Lan, Yuh-Der Shiang, Jia-Ching Lin, Ker-Jun Lin, Kai-Fung Perng, Ya-Tung Cherng
  • Structure of quantum dot light emitting diode and method of fabricating the same
    Patent number: 6909108
    Abstract: An InAs/GaAs quantum dot light emitting diode and a method of fabricating the same are disclosed. The InAs/GaAs quantum dot light emitting diode which is formed by turning off an As shutter and using As background concentration for epitaxy, comprises a Si-doped GaAs substrate, a N-type structure, an undoped quantum well, aseries of quantum dot layers, spacer layers, a barrier layer and a P-type structure.
    Type: Grant
    Filed: November 26, 2003
    Date of Patent: June 21, 2005
    Assignee: Chung-Shan Institute of Science and Technology
    Inventors: Shiang-Feng Tang, Shih-Yen Lin, Si-Chen Lee, Ya-Tung Cherng
  • [STRUCTURE OF QUANTUM DOT LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME]
    Publication number: 20040183062
    Abstract: An InAs/GaAs quantum dot light emitting diode and a method of fabricating the same are disclosed. The InAs/GaAs quantum dot light emitting diode which is formed by turning off an As shutter and using As background concentration for epitaxy, comprises a Si-doped GaAs substrate, a N-type structure, an undoped quantum well, aseries of quantum dot layers, spacer layers, a barrier layer and a P-type structure.
    Type: Application
    Filed: November 26, 2003
    Publication date: September 23, 2004
    Inventors: SHIANG-FENG TANG, SHIH-YEN LIN, SI-CHEN LEE, YA-TUNG CHERNG
  • [NITRIDE BASED SEMICONDUCTOR LASER DIODE DEVICE WITH A BAR MASK]
    Publication number: 20040057481
    Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.
    Type: Application
    Filed: June 12, 2003
    Publication date: March 25, 2004
    Inventors: WEN-HOW LAN, YUH-DER SHIANG, JIA-CHING LIN, KER-JUN LIN, KAI-FUNG PERNG, YA-TUNG CHERNG