Patents by Inventor Ya Tzu Chen

Ya Tzu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240139262
    Abstract: The present disclosure relates to a complex probiotic composition and a method for improving exercise performance of a subject with low intrinsic aerobic exercise capacity. The complex probiotic composition, which includes Lactobacillus rhamnosus GKLC1, Bifidobacterium lactis GKK24 and Clostridium butyricum GKB7, administered to the subject with the low intrinsic aerobic exercise capacity in a continuation period, can effectively reduce serum lactic acid and serum urea nitrogen after aerobic exercise, reduce proportion of offal fat and/or increase liver and muscle glycogen contents, thereby being as an effective ingredient for preparation of various compositions.
    Type: Application
    Filed: October 13, 2023
    Publication date: May 2, 2024
    Inventors: Chin-Chu CHEN, Yen-Lien CHEN, Shih-Wei LIN, Yen-Po CHEN, Ci-Sian WANG, Yu-Hsin HOU, Yang-Tzu SHIH, Ching-Wen LIN, Ya-Jyun CHEN, Jia-Lin JIANG, You-Shan TSAI, Zi-He WU
  • Patent number: 11959101
    Abstract: A cell activation reactor and a cell activation method are provided. The cell activation reactor includes a body, a rotating part, an upper cover, a microporous film, and multiple baffles. The body has an accommodating space, which is suitable for accommodating multiple cells and multiple magnetic beads. The rotating part is disposed in the accommodating space and includes multiple impellers. The microporous film is disposed in the accommodating space and covers multiple holes of the accommodating space. The baffles are disposed in the body. When the rotating part is driven to rotate, the interaction between the baffles and the impellers separates the cells and the magnetic beads.
    Type: Grant
    Filed: November 26, 2021
    Date of Patent: April 16, 2024
    Assignee: Industrial Technology Research Institute
    Inventors: Ting-Hsuan Chen, Kuo-Hsing Wen, Ya-Hui Chiu, Nien-Tzu Chou, Ching-Fang Lu, Cheng-Tai Chen, Ting-Shuo Chen, Pei-Shin Jiang
  • Publication number: 20240021431
    Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.
    Type: Application
    Filed: July 28, 2023
    Publication date: January 18, 2024
    Inventors: Wan Hsuan Hsu, Jao Sheng Huang, Yen-Chiu Kuo, Yu-Li Cheng, Ya Tzu Chen, Neng-Jye Yang, Chun-Li Chou
  • Patent number: 11776818
    Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.
    Type: Grant
    Filed: April 19, 2021
    Date of Patent: October 3, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wan Hsuan Hsu, Jao Sheng Huang, Yen-Chiu Kuo, Yu-Li Cheng, Ya Tzu Chen, Neng-Jye Yang, Chun-Li Chou
  • Publication number: 20210257218
    Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.
    Type: Application
    Filed: April 19, 2021
    Publication date: August 19, 2021
    Inventors: Wan Hsuan Hsu, Jao Sheng Huang, Yen-Chiu Kuo, Yu-Li Cheng, Ya Tzu Chen, Neng-Jye Yang, Chun-Li Chou
  • Publication number: 20210118689
    Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.
    Type: Application
    Filed: October 18, 2019
    Publication date: April 22, 2021
    Inventors: Wan Hsuan Hsu, Jao Sheng Huang, Yen-Chiu Kuo, Yu-Li Cheng, Ya Tzu Chen, Neng-Jye Yang, Chun-Li Chou
  • Patent number: 10985028
    Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.
    Type: Grant
    Filed: October 18, 2019
    Date of Patent: April 20, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wan Hsuan Hsu, Jao Sheng Huang, Yen-Chiu Kuo, Yu-Li Cheng, Ya Tzu Chen, Neng-Jye Yang, Chun-Li Chou