Patents by Inventor YA YA SUN

YA YA SUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating semiconductor device with mini SONOS cell
    Patent number: 8936981
    Abstract: A method for fabricating a semiconductor device with mini-SONOS cell is disclosed. The method includes: providing a semiconductor substrate having a first MOS region and a second MOS region; forming a first trench in the semiconductor substrate between the first MOS region and the second MOS region; depositing a oxide liner and a nitride liner in the first trench; forming a STI in the first trench; removing a portion of the nitride liner for forming a second trench between the first MOS region of the semiconductor substrate and the STI and a third trench between the STI and the second MOS region of the semiconductor substrate; and forming a first conductive type nitride layer in the second trench.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: January 20, 2015
    Assignee: United Microelectronics Corp.
    Inventor: Ya Ya Sun
  • METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH MINI SONOS CELL
    Publication number: 20140099775
    Abstract: A method for fabricating a semiconductor device with mini-SONOS cell is disclosed. The method includes: providing a semiconductor substrate having a first MOS region and a second MOS region; forming a first trench in the semiconductor substrate between the first MOS region and the second MOS region; depositing a oxide liner and a nitride liner in the first trench; forming a STI in the first trench; removing a portion of the nitride liner for forming a second trench between the first MOS region of the semiconductor substrate and the STI and a third trench between the STI and the second MOS region of the semiconductor substrate; and forming a first conductive type nitride layer in the second trench.
    Type: Application
    Filed: December 16, 2013
    Publication date: April 10, 2014
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventor: YA YA SUN
  • Semiconductor device with mini SONOS cell
    Patent number: 8637916
    Abstract: A semiconductor device with mini silicon-oxide-nitride-oxide-silicon (mini-SONOS) cell is disclosed. The semiconductor device includes: a semiconductor substrate; a shallow trench isolation (STI) embedded in the semiconductor substrate; a logic device partially overlapping the STI; and a SONOS cell formed in the overlapped region of the logic device and the STI.
    Type: Grant
    Filed: April 12, 2010
    Date of Patent: January 28, 2014
    Assignee: United Microelectronics Corp.
    Inventor: Ya Ya Sun
  • SEMICONDUCTOR DEVICE WITH MINI SONOS CELL AND METHOD FOR FABRICATING THE SAME
    Publication number: 20110248331
    Abstract: A semiconductor device with mini silicon-oxide-nitride-oxide-silicon (mini-SONOS) cell is disclosed. The semiconductor device includes: a semiconductor substrate; a shallow trench isolation (STI) embedded in the semiconductor substrate; a logic device partially overlapping the STI; and a SONOS cell formed in the overlapped region of the logic device and the STI.
    Type: Application
    Filed: April 12, 2010
    Publication date: October 13, 2011
    Inventor: YA YA SUN