Abstract: Metal gate cutting techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes receiving an integrated circuit (IC) device structure that includes a substrate, one or more fins disposed over the substrate, a plurality of gate structures disposed over the fins, a dielectric layer disposed between and adjacent to the gate structures, and a patterning layer disposed over the gate structures. The gate structures traverses the fins and includes first and second gate structures. The method further includes: forming an opening in the patterning layer to expose a portion of the first gate structure, a portion of the second gate structure, and a portion of the dielectric layer; and removing the exposed portion of the first gate structure, the exposed portion of the second gate structure, and the exposed portion of the dielectric layer.

Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Abstract: A transmission device includes an input shaft, a first transmission mechanism, a speed changing mechanism, and an output shaft. The first transmission mechanism includes a transmission shaft, an inner magnetic member received in the transmission shaft, a mounting housing coupled to the input shaft, and an outer magnetic member. The input shaft is configured to rotate the mounting housing. The outer magnetic member is received in the mounting housing and positioned adjacent to the inner magnetic member. A magnetic pole of the inner magnetic member is opposite to a magnetic pole of the outer magnetic member. The speed changing mechanism is coupled to the transmission shaft. The output shaft is coupled to the speed changing mechanism.

Abstract: A transmission device includes an input shaft, a first transmission mechanism, a speed changing mechanism, and an output shaft. The first transmission mechanism includes a transmission shaft, an inner magnetic member received in the transmission shaft, a mounting housing coupled to the input shaft, and an outer magnetic member. The input shaft is configured to rotate the mounting housing. The outer magnetic member is received in the mounting housing and positioned adjacent to the inner magnetic member. A magnetic pole of the inner magnetic member is opposite to a magnetic pole of the outer magnetic member. The speed changing mechanism is coupled to the transmission shaft. The output shaft is coupled to the speed changing mechanism.