Abstract: An LCD display device and a series connected quantum dot light-emitting device are disclosed. Using N-type charge generation layer and a P-type charge generation layer disposed in a stacked manner, only one pair of electrodes are required to realize a series connection of QLED device and OLED device. The combination of the two types of diode light-emitting devices can overcome their own weakness to form a light-emitting device having narrow full width at half maximum, high color saturation and high luminous efficiency.

Abstract: The present disclosure provides a packaging method and a package structure of a QLED device. The packaging method of the QLED device forming a thin film encapsulation layer in which a plurality of inorganic barrier layers and at least one organic buffer layer are arranged alternately on a QLED device to seal the QLED device against water and oxygen, and the organic buffer layer is further doped with a thermal conducting material, so that the heat generated by the QLED device can be promptly transmitted through the thin film encapsulation layer to improve the heat dissipation of the thin film encapsulation layer, thereby improving the light extraction efficiency and the service life of the QLED device.

Abstract: The present invention provides an inverted QD-LED and a manufacturing method thereof. The manufacturing method of an inverted QD-LED according to the present invention adopts a hydrothermal synthesis process to form a monocrystalline TiO2 nanorod array film for serving as an electron transport layer, wherein a plurality of monocrystalline TiO2 nanorods contained in the monocrystalline TiO2 nanorod array film are arranged in an array so as not to readily get aggregated thereby overcoming the deficiencies of inhomogeneous film formation resulting from aggregation of TiO2 nanometer particles, lowered electron transport efficiency, and low light extraction efficiency, and thus ensuring high-efficiency electron transport rate of the electron transport layer, increasing scattering of light to heighten light extraction efficiency, and improve luminous efficiency and stability of a device.

Abstract: The present disclosure provides a packaging method and a package structure of a QLED device. The packaging method of the QLED device forming a thin film encapsulation layer in which a plurality of inorganic barrier layers and at least one organic buffer layer are arranged alternately on a QLED device to seal the QLED device against water and oxygen, and the organic buffer layer is further doped with a thermal conducting material, so that the heat generated by the QLED device can be promptly transmitted through the thin film encapsulation layer to improve the heat dissipation of the thin film encapsulation layer, thereby improving the light extraction efficiency and the service life of the QLED device.

Abstract: The present invention provides an inverted QD-LED and a manufacturing method thereof. The manufacturing method of an inverted QD-LED according to the present invention adopts a hydrothermal synthesis process to form a monocrystalline TiO2 nanorod array film for serving as an electron transport layer, wherein a plurality of monocrystalline TiO2 nanorods contained in the monocrystalline TiO2 nanorod array film are arranged in an array so as not to readily get aggregated thereby overcoming the deficiencies of inhomogeneous film formation resulting from aggregation of TiO2 nanometer particles, lowered electron transport efficiency, and low light extraction efficiency, and thus ensuring high-efficiency electron transport rate of the electron transport layer, increasing scattering of light to heighten light extraction efficiency, and improve luminous efficiency and stability of a device.

Abstract: An LCD display device and a series connected quantum dot light-emitting device are disclosed. Using N-type charge generation layer and a P-type charge generation layer disposed in a stacked manner, only one pair of electrodes are required to realize a series connection of QLED device and OLED device. The combination of the two types of diode light-emitting devices can overcome their own weakness to form a light-emitting device having narrow full width at half maximum, high color saturation and high luminous efficiency.