Abstract: A webbing adjusting buckle is provided. The webbing adjusting buckle includes a shell, a roller, and at least one limit locking member. The roller is arranged in the shell and is capable of rotating around an axis of the roller, as well as moving back and forth relative to the shell. The at least one limit locking member is movably assembled in the shell, and the limit locking member includes a limit column and an elastic member. The elastic member is arranged in a length direction of the limit column. A rotation limit structure is formed between the outer wall of the roller and the limit column, to allow the roller to rotate in one direction and prevent the roller from rotating reversely. The elastic member is used to provide the limit column with an elastic force towards the roller.

Abstract: The present invention discloses a webbing adjusting buckle. The technical solution of the present invention can achieve a self-locking function to avoid the situation that the webbing is drawn back and even deviates from the roller, and effectively improve the safety and reliability of the webbing adjusting buckle.

Abstract: The present invention provides a manufacture method of an AMOLED pixel driving circuit. The method utilizes the oxide semiconductor thin film transistor to be the switch thin film transistor of the AMOLED pixel driving circuit to reduce the leakage current of the switch thin film transistor, and the P type polysilicon thin film transistor manufactured by utilizing the Solid Phase Crystallization is employed to be the drive thin film transistor of the AMOLED pixel driving circuit to promote the mobility, the equality and the reliability of the drive thin film transistor, and utilizing the P type thin film transistor to be the drive thin film transistor can form the constant current type OLED element, which is more stable than the source follower type OLED formed by the N type thin film transistor, and meanwhile, the parasitic capacitance is decreased with the top gate structure.

Abstract: The present invention provides a manufacture method of an AMOLED pixel driving circuit. The method utilizes the oxide semiconductor thin film transistor to be the switch thin film transistor of the AMOLED pixel driving circuit to reduce the leakage current of the switch thin film transistor, and the P type polysilicon thin film transistor manufactured by utilizing the Solid Phase Crystallization is employed to be the drive thin film transistor of the AMOLED pixel driving circuit to promote the mobility, the equality and the reliability of the drive thin film transistor, and utilizing the P type thin film transistor to be the drive thin film transistor can form the constant current type OLED element, which is more stable than the source follower type OLED formed by the N type thin film transistor, and meanwhile, the parasitic capacitance is decreased with the top gate structure.