Abstract: A readout circuit for an uncooled infrared focal plane array includes: a first biasing circuit for generating a detection output signal; a second biasing circuit for generating a first reference output signal; a first integration circuit; and an analog-to-digital circuit including: a ramp signal generating circuit for generating a ramp signal according to a second reference microbolometer of a third biasing circuit. In the readout circuit, subtracting and amplifying the detection output signal and the first reference output signal are provided by the integrator at an analog domain, while ratio counting is provided by an analog-to-digital converter during analog-to-digital conversion. Furthermore, a column level integrated readout channel utilizes only one reference microbolometer, and the chip level ramp signal generator also utilizes only one reference microbolometer. Therefore, a chip area is further saved, and noise sources are decreased.

Abstract: A readout circuit for an uncooled infrared focal plane array includes: a first biasing circuit for generating a detection output signal; a second biasing circuit for generating a first reference output signal; a first integration circuit; and an analog-to-digital circuit including: a ramp signal generating circuit for generating a ramp signal according to a second reference microbolometer of a third biasing circuit. In the readout circuit, subtracting and amplifying the detection output signal and the first reference output signal are provided by the integrator at an analog domain, while ratio counting is provided by an analog-to-digital converter during analog-to-digital conversion. Furthermore, a column level integrated readout channel utilizes only one reference microbolometer, and the chip level ramp signal generator also utilizes only one reference microbolometer. Therefore, a chip area is further saved, and noise sources are decreased.

Abstract: A double-sided diaphragm micro gas-preconcentrator has a micro-gas chamber which is formed by stacking an upper silicon substrate with a lower silicon substrate with a back-on-face configuration. One or more suspended membranes are provided on every silicon substrate. The silicon where the suspended membrane is provided is completely removed for forming a cavity. A thin-film heater is deposited on every suspended membrane. A sorptive film is coated on an inner wall of every suspended membrane. Thus, the upper and lower sides of the preconcentrator in the present invention are suspended membranes, which improve the area of the sorptive film on the diaphragm. As a result, the preconcentrating factor is improved while keeping the small heat capacity, fast heating rate, and low power consumption features of the planar diaphragm preconcentrator.

Abstract: A double-sided diaphragm micro gas-preconcentrator has a micro-gas chamber which is formed by bonding an upper silicon substrate with a lower silicon substrate. One or more suspended membranes are provided on every silicon substrate. The silicon where the suspended membrane is provided is completely removed for forming a cavity. A thin-film heater is deposited on every suspended membrane. A sorptive film is coated on an inner wall of every suspended membrane. Thus, the upper and lower sides of the preconcentrator in the present invention are suspended membranes, which improve the area of the sorptive film on the diaphragm. As a result, the preconcentrating factor is improved while keeping the small heat capacity, fast heating rate, and low power consumption features of the planar diaphragm preconcentrator.

Abstract: A double-sided diaphragm micro gas-preconcentrator has a micro-gas chamber which is formed by bonding an upper silicon substrate with a lower silicon substrate. One or more suspended membranes are provided on every silicon substrate. The silicon where the suspended membrane is provided is completely removed for forming a cavity. A thin-film heater is deposited on every suspended membrane. A sorptive film is coated on an inner wall of every suspended membrane. Thus, the upper and lower sides of the preconcentrator in the present invention are suspended membranes, which improve the area of the sorptive film on the diaphragm. As a result, the preconcentrating factor is improved while keeping the small heat capacity, fast heating rate, and low power consumption features of the planar diaphragm preconcentrator.

Abstract: An active matrix organic electroluminescent device includes a thin-film transistor, an organic electroluminescent device, and a spacer layer deposited between the thin-film transistor and the organic electroluminescent device, wherein the spacer layer is made of adhesive for a dual curing system selected from the group consisting of ultraviolet curing-thermal curing, ultraviolet curing-microwave curing, ultraviolet curing-anaerobic curing, and ultraviolet curing-electron beam curing system. The present invention solves the poor adhesiveness between the thin-film transistor and the organic electroluminescent device, and improves the moisture and oxygen proof ability. The preparation method is simple, effective, and able to lower the cost and difficulty, and greatly improve the yield rate of the device.

Abstract: The present invention provides a method of wet etching a silicon slice including a silicon substrate and a metal film layer thereon comprising steps of: performing lithographic process to the silicon slice forming a masked silicon slice comprising the silicon substrate and a partially masked metal film thereon; immersing the masked silicon slice into an etchant; rotating the masked silicon slice in the etchant; injecting high-purity nitrogen gas into the etchant for agitating the etchant; removing the masked silicon slice out of the etchant, upon completion of etching; and rinsing the masked silicon slice with deionized water.

Abstract: A metal vanadium film is used as an extraction electrode contacting with a vanadium oxide or doped vanadium oxide film. The electrode material is adapted for a detector, sensor and optical switch based on a vanadium oxide or doped vanadium oxide film. The metal vanadium film is in favor of reducing the thermal conductivity of the support structure of the array unit. The preparation process of the vanadium film using the metal vanadium as the source material is more easily controlled than that of NiCr film using the NiCr alloy as the source material. The extraction electrode of the present invention easily obtains an excellent metal-semiconductor contact characteristic. The preparation process and patterning process of the metal vanadium film have an excellent technology compatibility with the IC and MEMS manufacturing processes.

Abstract: A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light.

Abstract: An active matrix organic electroluminescent device includes a thin-film transistor, an organic electroluminescent device, and a spacer layer deposited between the thin-film transistor and the organic electroluminescent device, wherein the spacer layer is made of adhesive for a dual curing system selected from the group consisting of ultraviolet curing-thermal curing, ultraviolet curing-microwave curing, ultraviolet curing-anaerobic curing, and ultraviolet curing-electron beam curing system. The present invention solves the poor adhesiveness between the thin-film transistor and the organic electroluminescent device, and improves the moisture and oxygen proof ability. The preparation method is simple, effective, and able to lower the cost and difficulty, and greatly improve the yield rate of the device.

Abstract: An active matrix organic electroluminescent device includes a thin-film transistor, an organic electroluminescent device, and a spacer layer deposited between the thin-film transistor and the organic electroluminescent device, wherein the spacer layer is made of adhesive for a dual curing system selected from the group consisting of ultraviolet curing-thermal curing, ultraviolet curing-microwave curing, ultraviolet curing-anaerobic curing, and ultraviolet curing-electron beam curing system. The present invention solves the poor adhesiveness between the thin-film transistor and the organic electroluminescent device, and improves the moisture and oxygen proof ability. The preparation method is simple, effective, and able to lower the cost and difficulty, and greatly improve the yield rate of the device.

Abstract: A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light.

Abstract: A metal vanadium film is used as an extraction electrode contacting with a vanadium oxide or doped vanadium oxide film. The electrode material is adapted for a detector, sensor and optical switch based on a vanadium oxide or doped vanadium oxide film. The metal vanadium film is in favor of reducing the thermal conductivity of the support structure of the array unit. The preparation process of the vanadium film using the metal vanadium as the source material is more easily controlled than that of NiCr film using the NiCr alloy as the source material. The extraction electrode of the present invention easily obtains an excellent metal-semiconductor contact characteristic. The preparation process and patterning process of the metal vanadium film have an excellent technology compatibility with the IC and MEMS manufacturing processes.

Abstract: A microbolometer includes a micro-bridge structure for uncooling infrared or terahertz detectors. The thermistor and light absorbing materials of the micro-bridge structure are the vanadium oxide-carbon nanotube composite film formed by one-dimensional carbon nanotubes and two-dimensional vanadium oxide film. The micro-bridge is a three-layer sandwich structure consisting of a layer of amorphous silicon nitride base film as the supporting and insulating layer of the micro-bridge, a layer or multi-layer of vanadium oxide-carbon nanotube composite film in the middle of the micro-bridge as the heat sensitive and light absorbing layer of the microbolometer, and a layer of amorphous silicon nitride top film as the stress control layer and passivation of the heat sensitive film. The microbolometer and method for manufacturing the same can overcome the shortcomings of the prior art, improve the performance of the device, reduce the cost of raw materials and is suitable for large-scale industrial production.

Abstract: The present invention discloses an active matrix organic electroluminescence device comprising a thin-film transistor, an organic electroluminescence device, and an interlayer deposited between the thin-film transistor and the organic electroluminescence device, wherein the interlayer is made of cationic ultraviolet-curing adhesive comprising epoxy resin or modified epoxy resin, diluting agent, cationic photo initiator. The interlayer solves poor adhesiveness between the driving circuit and the organic electroluminescence device, and improves the moisture and oxygen proof ability. The preparation method is simple, effective, and able to lower the cost and difficulty, and greatly improve the yield rate.

Abstract: The present invention provides a method of wet etching a silicon slice including a silicon substrate and a metal film layer thereon comprising steps of: performing lithographic process to the silicon slice forming a masked silicon slice comprising the silicon substrate and a partially masked metal film thereon; immersing the masked silicon slice into an etchant; rotating the masked silicon slice in the etchant; injecting high-purity nitrogen gas into the etchant for agitating the etchant; removing the masked silicon slice out of the etchant, upon completion of etching; and rinsing the masked silicon slice with deionized water.

Abstract: An active matrix organic electroluminescent device includes a thin-film transistor, an organic electroluminescent device, and a spacer layer deposited between the thin-film transistor and the organic electroluminescent device, wherein the spacer layer is made of adhesive for a dual curing system selected from the group consisting of ultraviolet curing-thermal curing, ultraviolet curing-microwave curing, ultraviolet curing-anaerobic curing, and ultraviolet curing-electron beam curing system. The present invention solves the poor adhesiveness between the thin-film transistor and the organic electroluminescent device, and improves the moisture and oxygen proof ability. The preparation method is simple, effective, and able to lower the cost and difficulty, and greatly improve the yield rate of the device.