Abstract: A semiconductor device includes a conductive pattern, and a capacitor electrically connected to the conductive pattern. The capacitor includes a first electrode structure electrically connected to the conductive pattern, a dielectric layer disposed on the first electrode structure, a second electrode structure disposed on the dielectric layer, and a plate electrode disposed on the second electrode structure. The second electrode structure includes a first electrode material layer including a first metal element and a nitrogen element, and a first protective material layer including a second metal element, a Group 14 element, and an oxygen element.

Abstract: A semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate, a dielectric layer covering the lower electrodes and including a halogen element, and an upper electrode covering the dielectric layer. Each of the plurality of lower electrodes includes a first electrode layer, an insertion layer disposed on the first electrode layer, and a second electrode layer disposed on the first electrode layer and the insertion layer. The insertion layer includes an insertion material including a halogen element.

Abstract: A semiconductor device includes a substrate, lower electrodes on the substrate, a dielectric layer covering the lower electrodes, and an upper electrode covering the dielectric layer. Each of the lower electrodes includes a first electrode layer having a cylindrical shape, a first insertion layer disposed on the first electrode layer and having a cylindrical shape, a second electrode layer disposed on the first insertion layer and extending to cover an upper end of the first electrode layer and an upper end of the first insertion layer. At least one of the first electrode layer and the second electrode layer has a first stress, and the first insertion layer has a second stress, different from the first stress. The first stress is one of tensile stress and compressive stress, and the second stress is the other of the tensile stress and the compressive stress.