Abstract: A device that may include a transmitter that is configured to transmit, per each sensing iteration, a radiation pulse; an array of pixels, each pixel comprises multiple subpixels, each subpixel comprises single photon avalanche diodes (SPADs) that are coupled to each other in parallel, and one or more quenching circuits, wherein each subpixel is configured to output a subpixel output signal indicative of a reflected radiation pulse sensed by one or more SPADs of the subpixel; wherein the reflected radiation pulse is reflected from an area of an object that was illuminated by the radiation pulse; and a processing circuit that is configured to: read, for each pixel, multiple subpixel output signals from the multiple subpixels of the pixel; receive, per each sensing iteration, transmission timing information indicative of a timing of transmission of the radiation pulse; and determine, per each sensing iteration and per each subpixel, a timing of a first detection of the reflected pulse detected by any of the SPA

Abstract: A method for sensing gas by a gas sensing device, the method may include generating, by a semiconductor temperature sensing element that is spaced apart from a gas reactive element and is thermally coupled to the gas reactive element, detection signals that are indicative of a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale; and processing, by a readout circuit of the gas sensing device, the detection signals to provide information about a gas that affected the temperature of the gas reactive element.

Abstract: A gas sensing device, comprising a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element; and (iii) multiple heating elements that are configured to heat the gas reactive element to at least one predefined temperature.

Abstract: There may be provided a radiation sensing device that includes a first TMOS with temperature dependent electrical parameters; wherein the first TMOS is exposed to radiation, and a second TMOS transistor that is sheltered from radiation. The radiation sensing device performs a differential measurement, and applied various measures for noise reduction, and maintaining the stability of the radiation sensing device.

Abstract: There may be provided a radiation sensing device that includes a first TMOS with temperature dependent electrical parameters; wherein the first TMOS is exposed to radiation, and a second TMOS transistor that is sheltered from radiation. The radiation sensing device performs a differential measurement, and applied various measures for noise reduction, and maintaining the stability of the radiation sensing device.

Abstract: There is provided a gas sensing device for sensing a certain gas that is associated with a certain spectral band, the gas sensing device may include a passive gas sensor that is configured to generate passive gas sensor detection signals that are responsive to the certain spectral band; a passive dummy sensor that is configured to generate passive dummy sensor detection signals that are indifferent to the certain spectral hand; and at least one circuit that is configured to detect a presence or absence of the certain gas within a certain volume that is located within the fields of view of the passive gas sensor and the passive dummy sensor based on a comparison between the passive gas sensor detection signals and the passive dummy sensor detection signals.

Abstract: A sensing device that may include a substrate; a single-ended SPAD; first electrical components; second electrical components; and capacitors. The SPAD, the first electrical components and the second electrical components are formed on the substrate. The SPAD and the first electrical components belong to a high voltage domain of the sensing device. The high voltage domain is configured to receive a high supply voltage that exceeds a breakdown voltage of the SPAD. The second electrical components belong to a low voltage domain of the sensing device. The capacitors are coupled between the low voltage domain and the high voltage domain. The first electrical components and the second electrical components belong to an electrical circuit that is configured to perform quenching of the SPAD.

Abstract: A gas sensing device, that may include a suspended gas sensing element, a frame that supports the suspended gas sensing element, and one or more traps for trapping at least one out of Siloxane and silicon dioxide. The suspended gas sensing element may include a gas reactive element that has a gas dependent temperature parameter, and a semiconductor temperature sensing element that is thermally coupled to the gas reactive element, and is configured to generate detection signals that are responsive to a temperature of the gas reactive element. The gas reactive element and the semiconductor temperature sensing element are of microscopic scale.

Abstract: A method for sensing gas by a gas sensing device, the method may include generating, by a semiconductor temperature sensing element that is spaced apart from a gas reactive element and is thermally coupled to the gas reactive element, detection signals that are indicative of a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale; and processing, by a readout circuit of the gas sensing device, the detection signals to provide information about a gas that affected the temperature of the gas reactive element.

Abstract: A method for manufacturing a thermal sensor, the method may include forming, using ion etching, one or more first holes that pass through (a) an initial layer, (a) a first oxide layer, (c) a first semiconductor substrate; filling the one or more first holes with oxide to form supporting elements; fabricating one or more thermal semiconductor sensing elements; forming one or more second holes in the one or more upper layers and the first oxide layer; applying an isotropic etching process to remove the first semiconductor substrate and expose the supporting elements to provide a suspended first oxide layer.

Abstract: There is provided a gas sensing device for sensing a certain gas that is associated with a certain spectral band, the gas sensing device may include a passive gas sensor that is configured to generate passive gas sensor detection signals that are responsive to the certain spectral band; a passive dummy sensor that is configured to generate passive dummy sensor detection signals that are indifferent to the certain spectral band; and at least one circuit that is configured to detect a presence or absence of the certain gas within a certain volume that is located within the fields of view of the passive gas sensor and the passive dummy sensor based on a comparison between the passive gas sensor detection signals and the passive dummy sensor detection signals.

Abstract: A sensing device that may include a substrate; a single-ended SPAD; first electrical components; second electrical components; and capacitors. The SPAD, the first electrical components and the second electrical components are formed on the substrate. The SPAD and the first electrical components belong to a high voltage domain of the sensing device. The high voltage domain is configured to receive a high supply voltage that exceeds a breakdown voltage of the SPAD. The second electrical components belong to a low voltage domain of the sensing device. The capacitors are coupled between the low voltage domain and the high voltage domain. The first electrical components and the second electrical components belong to an electrical circuit that is configured to perform quenching of the SPAD.

Abstract: A gas sensing device that includes a (a) gas reactive element that has a gas dependent temperature parameter; and (b) a semiconductor temperature sensing element that is spaced apart from the gas reactive element and is configured to sense radiation emitted from the gas reactive element and generate detection signals that are responsive to a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale.

Abstract: A pressure sensing device that includes a pressure sensing element that is of microscopic scale and has a pressure level dependent thermal parameter; a signal source that is configured to supply an input electrical signal to the pressure sensing element; and a monitor that is configured to (a) measure electrical output signals generated by the pressure sensing element as a result of the supply of the input electrical signal and (b) estimate a pressure level applied on the pressure sensing element based on the electrical output signals.

Abstract: A gas sensing device, comprising a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element; and (iii) multiple heating elements that are configured to heat the gas reactive element to at least one predefined temperature.

Abstract: A method and a sensing device are provided. The sensing device may include a readout circuit, a bulk, a holding element and a heterojunction bipolar transistor; wherein heterojunction bipolar transistor is configured to generate detection signals responsive to a temperature of at least a portion of the heterojunction bipolar transistor; wherein the holding element is configured to support the heterojunction bipolar transistor; wherein the heterojunction bipolar transistor is thermally isolated from the bulk; wherein the readout circuit is electrically coupled to the heterojunction bipolar transistor; and wherein the readout circuit is configured to receive the detection signals and to process the detection signals to provide information about electromagnetic radiation that affected the temperature of the at least portion of the heterojunction bipolar transistor.

Abstract: A method for manufacturing a thermal sensor, the method may include forming, using ion etching, one or more first holes that pass through (a) an initial layer, (a) a first oxide layer, (c) a first semiconductor substrate; filling the one or more first holes with oxide to form supporting elements; fabricating one or more thermal semiconductor sensing elements; forming one or more second holes in the one or more upper layers and the first oxide layer; applying an isotropic etching process to remove the first semiconductor substrate and expose the supporting elements to provide a suspended first oxide layer.

Abstract: A gas sensing device that includes a (a) gas reactive element that has a gas dependent temperature parameter; and (b) a semiconductor temperature sensing element that is spaced apart from the gas reactive element and is configured to sense radiation emitted from the gas reactive element and generate detection signals that are responsive to a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale.

Abstract: A pressure sensing device that includes a pressure sensing element that is of microscopic scale and has a pressure level dependent thermal parameter; a signal source that is configured to supply an input electrical signal to the pressure sensing element; and a monitor that is configured to (a) measure electrical output signals generated by the pressure sensing element as a result of the supply of the input electrical signal and (b) estimate a pressure level applied on the pressure sensing element based on the electrical output signals.

Abstract: A device that may include a narrowband filter that is arranged to pass radiation within a main signal waveband in which a muzzle flash is expected to include energy above a first energy threshold; a first single photon avalanche diode (SPAD) arranged to detect photons of the main signal waveband during different points in time and to output first digital detection signals representative of the photons of the main signal waveband; and a signal processor that is arranged to receive the first digital detection signals and to detect, in response to at least the first digital detection signals, the muzzle flash.