Abstract: A controller includes an interface and storage circuitry. The interface communicates with one or more memory devices, each of the memory devices includes multiple memory cells organized in memory blocks. The storage circuitry is configured to perform multiple storage operations to the memory cells in the one or more memory devices, and mark memory blocks in which one or more storage operations have failed as bad blocks. The controller is further configured to identify a pattern of multiple bad blocks occurring over a sequence of multiple consecutive storage operations, the pattern is indicative of a system-level malfunction in a memory system including the controller, and in response to identifying the pattern, to perform a corrective action to the memory system.

Abstract: A storage device includes storage circuitry and multiple memory blocks. The multiple memory blocks are arranged in an array, and each of the memory blocks includes multiple memory cells. A maximal number of programming cycles that a memory block of the multiple memory blocks sustains depends on a distance of the memory block from an edge of the array. The storage circuitry is configured to apply to the memory blocks programming cycles so that a number of programming cycles that can be applied to a respective memory block is based on a respective distance of the respective memory block from the edge of the array.

Abstract: A storage device includes storage circuitry and multiple memory blocks. The multiple memory blocks are arranged in an array, and each of the memory blocks includes multiple memory cells. A maximal number of programming cycles that a memory block of the multiple memory blocks sustains depends on a distance of the memory block from an edge of the array. The storage circuitry is configured to apply to the memory blocks programming cycles so that a number of programming cycles that can be applied to a respective memory block is based on a respective distance of the respective memory block from the edge of the array.

Abstract: A storage device includes storage circuitry and multiple memory blocks. The multiple memory blocks are arranged in an array, and each of the memory blocks includes multiple memory cells. A maximal number of programming cycles that a memory block of the multiple memory blocks sustains depends on a distance of the memory block from an edge of the array. The storage circuitry is configured to apply to the memory blocks programming cycles so that a number of programming cycles that can be applied to a respective memory block is based on a respective distance of the respective memory block from the edge of the array.

Abstract: A device includes a memory and a read/write (R/W) unit. The memory includes multiple gates coupled to a common charge-trap layer. The R/W unit is configured to program and read the memory by creating and reading a set of electrically-charged regions in the common charge-trap layer, wherein at least a given region in the set is not uniquely associated with any single one of the gates.

Abstract: A method for data storage includes reading from a memory device data that is stored in a group of memory cells as respective analog values, and classifying readout errors in the read data into at least first and second different types, depending on zones in which the analog values fall. A memory quality that emphasizes the readout errors of the second type is assigned to the group of the memory cells, based on evaluated numbers of the readout errors of the first and second types.

Abstract: A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells.

Abstract: A method includes defining a normal voltage configuration for application to word lines (WLs) and Bit lines (BLs) of a memory block, and a an abnormal voltage configuration, different from the normal voltage configuration, for application to the WLs and the BLs of the memory block when a word-line-to-word-line (WL-WL) short-circuit is found between at least two of the WLs in the memory block. If no WL-WL short-circuit is found in the memory block, a data storage operation is performed in the memory block by applying the normal voltage configuration. If a WL-WL short-circuit is found in the memory block, the data storage operation is performed in the memory block by applying the abnormal voltage configuration.

Abstract: A device includes a memory and a read/write (R/W) unit. The memory includes multiple gates coupled to a common charge-trap layer. The R/W unit is configured to program and read the memory by creating and reading a set of electrically-charged regions in the common charge-trap layer, wherein at least a given region in the set is not uniquely associated with any single one of the gates.

Abstract: An apparatus includes a memory and a memory controller. The memory includes a memory block that includes memory cells connected by word lines. The memory controller is configured to store data in the memory cells, and to identify a suspected short-circuit event in the memory block by recognizing a deviation of a performance characteristic of at least a given word line in the memory block relative to the performance characteristic of remaining word lines in the memory block.

Abstract: A device includes a memory and a read/write (R/W) unit. The memory includes multiple gates coupled to a common charge-trap layer. The R/W unit is configured to program and read the memory by creating and reading a set of electrically-charged regions in the common charge-trap layer, wherein at least a given region in the set is not uniquely associated with any single one of the gates.

Abstract: A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells.

Abstract: A method for data storage includes reading from a memory device data that is stored in a group of memory cells as respective analog values, and classifying readout errors in the read data into at least first and second different types, depending on zones in which the analog values fall. A memory quality that emphasizes the readout errors of the second type is assigned to the group of the memory cells, based on evaluated numbers of the readout errors of the first and second types.

Abstract: A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells.

Abstract: A method includes, in an array of analog memory cells that are arranged in rows associated with respective word lines, reading a first group of the memory cells in a selected word line, including one or more memory cells that store a status of at least one word line in the array other than the selected word line. A readout configuration for a second group of the memory cells is set responsively to the read status. The second group of the memory cells is read using the readout configuration.

Abstract: A method includes selecting a word line for programming in an array of analog memory cells that are arranged in rows associated with respective word lines and columns associated with respective bit lines. Word-line voltages, which program the memory cells in the selected word line, are applied to the respective word lines. Bit-line voltages, which cause one or more additional memory cells outside the selected word line to be programmed as a result of programming the selected word line, are applied to the respective bit lines. Using the applied word-line and bit-line voltages, data is stored in the memory cells in the selected word line and the additional memory cells are simultaneously programmed.

Abstract: A device includes a memory and a read/write (R/W) unit. The memory includes multiple gates coupled to a common charge-trap layer. The R/W unit is configured to program and read the memory by creating and reading a set of electrically-charged regions in the common charge-trap layer, wherein at least a given region in the set is not uniquely associated with any single one of the gates.

Abstract: A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells.

Abstract: A method includes, in an array of analog memory cells that are arranged in rows associated with respective word lines, reading a first group of the memory cells in a selected word line, including one or more memory cells that store a status of at least one word line in the array other than the selected word line. A readout configuration for a second group of the memory cells is set responsively to the read status. The second group of the memory cells is read using the readout configuration.

Abstract: A method includes selecting a word line for programming in an array of analog memory cells that are arranged in rows associated with respective word lines and columns associated with respective bit lines. Word-line voltages, which program the memory cells in the selected word line, are applied to the respective word lines. Bit-line voltages, which cause one or more additional memory cells outside the selected word line to be programmed as a result of programming the selected word line, are applied to the respective bit lines. Using the applied word-line and bit-line voltages, data is stored in the memory cells in the selected word line and the additional memory cells are simultaneously programmed.