Patents by Inventor Yafeng QIAN

Yafeng QIAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and fabrication method thereof
    Patent number: 11189495
    Abstract: A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes: providing a to-be-etched layer including a first region; forming a first pattern material layer on the to-be-etched layer; forming a sacrificial layer on the first pattern material layer; forming a first opening in the sacrificial layer over the first region, where the first opening exposes a first portion of the first pattern material layer; forming a first doped region in the first pattern material layer using the sacrificial layer as a mask; forming a second opening in the sacrificial layer over the first region, where the second opening exposes a second portion of the first pattern material layer; and forming a second doped region in the first pattern material layer using the sacrificial layer as a mask, where the second doped region is connected with the first doped region.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: November 30, 2021
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Yafeng Qian, Ying Li, Lihua Ding, Jiaxi Li, Wendong Liu
  • SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
    Publication number: 20210210351
    Abstract: A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes: providing a to-be-etched layer including a first region; forming a first pattern material layer on the to-be-etched layer; forming a sacrificial layer on the first pattern material layer; forming a first opening in the sacrificial layer over the first region, where the first opening exposes a first portion of the first pattern material layer; forming a first doped region in the first pattern material layer using the sacrificial layer as a mask; forming a second opening in the sacrificial layer over the first region, where the second opening exposes a second portion of the first pattern material layer; and forming a second doped region in the first pattern material layer using the sacrificial layer as a mask, where the second doped region is connected with the first doped region.
    Type: Application
    Filed: September 29, 2020
    Publication date: July 8, 2021
    Inventors: Yafeng QIAN, Ying LI, Lihua DING, Jiaxi LI, Wendong LIU