Abstract: Provided is a method of chemical-mechanical planarization of copper multilayer interconnection structures and of controlling the dishing problem associated therewith comprising: (a) preparing a slurry by (i) diluting SiO2 hydrosol with deionized water; (ii) admixing a chelating agent and adjusting the pH to between 9.5 to 11.5; and (iii) admixing nonionic surfactant(s) and oxidant(s); (b) applying said slurry to said copper multilayer interconnection structures; and (c) polishing said copper multilayer interconnection structures with polishing pad(s). The flow speed is 200-5000 ml/min, the temperature is 20-40° C., the rotation speed is 60-120 rpm, the pressure is 100-250 g/cm2, and the polishing speed can be 200-1100 nm/min. The process involves 1-5 min for polishing the copper and then 30-60 sec for polishing the copper, the barrier layer, and the dielectric layer.