Abstract: A semiconductor device includes a substrate including an active area and a well region, a bitcell including a first gate structure and a second gate structure extending in a first direction across the active area and spaced apart in a second direction; a first conductive structure at a first side of the first gate structure; a second conductive structure between a second side of the first gate structure and a first side of the second gate structure; and a third conductive structure at a second side of the second gate structure; a fourth conductive structure vertically overlapping the well region; a first conductor connected to the first conductive structure and the third conductive structure; a second conductor connected to the fourth conductive structure; and a third conductor connected to the first and second gate structures. The second and fourth conductive structures are electrically connected to the well region.

Abstract: A memory device includes a first memory array including: a plurality of memory strings spaced from each other along a first lateral direction and a second lateral direction, each of the plurality of memory strings including a plurality of memory cells arranged along a vertical direction; and a plurality of first conductive structures extending along the vertical direction; wherein each of the plurality of first conductive structures includes a first portion and a second portion; wherein the first portion extends across the plurality of memory cells of a corresponding pair of the plurality of memory strings along the vertical direction, and the second portion is disposed over the first portion along the vertical direction; and wherein the second portion extends farther than the first portion along at least one of the first or second lateral direction.

Abstract: A memory device includes a first memory array including: a plurality of memory strings spaced from each other along a first lateral direction and a second lateral direction, each of the plurality of memory strings including a plurality of memory cells arranged along a vertical direction; and a plurality of first conductive structures extending along the vertical direction; wherein each of the plurality of first conductive structures includes a first portion and a second portion; wherein the first portion extends across the plurality of memory cells of a corresponding pair of the plurality of memory strings along the vertical direction, and the second portion is disposed over the first portion along the vertical direction; and wherein the second portion extends farther than the first portion along at least one of the first or second lateral direction.

Abstract: A memory device includes a first memory array including: a plurality of memory strings spaced from each other along a first lateral direction and a second lateral direction, each of the plurality of memory strings including a plurality of memory cells arranged along a vertical direction; and a plurality of first conductive structures extending along the vertical direction; wherein each of the plurality of first conductive structures includes a first portion and a second portion; wherein the first portion extends across the plurality of memory cells of a corresponding pair of the plurality of memory strings along the vertical direction, and the second portion is disposed over the first portion along the vertical direction; and wherein the second portion extends farther than the first portion along at least one of the first or second lateral direction.

Abstract: In some aspects of the present disclosure, a memory device includes a first memory array including: a plurality of memory strings spaced from each other along a first lateral direction and a second lateral direction, each of the plurality of memory strings including a plurality of memory cells arranged along a vertical direction; and a plurality of first conductive structures extending along the vertical direction; wherein each of the plurality of first conductive structures includes a first portion and a second portion; wherein the first portion extends across the plurality of memory cells of a corresponding pair of the plurality of memory strings along the vertical direction, and the second portion is disposed over the first portion along the vertical direction; and wherein the second portion extends farther than the first portion along at least one of the first or second lateral direction.

Abstract: In some aspects of the present disclosure, a memory device includes a first memory array including: a plurality of memory strings spaced from each other along a first lateral direction and a second lateral direction, each of the plurality of memory strings including a plurality of memory cells arranged along a vertical direction; and a plurality of first conductive structures extending along the vertical direction; wherein each of the plurality of first conductive structures includes a first portion and a second portion; wherein the first portion extends across the plurality of memory cells of a corresponding pair of the plurality of memory strings along the vertical direction, and the second portion is disposed over the first portion along the vertical direction; and wherein the second portion extends farther than the first portion along at least one of the first or second lateral direction.

Abstract: The present invention provides a compound of Formula (I) and a salt thereof, wherein, m is an integer of 2 to 7, and R is independently at least one selected from the group consisting of hydrogen and C1-C20 alkyl. The compound promotes apoptosis in cancer cell and inhibits its growth. The present invention also provides a pharmaceutical composition which comprises the compound of Formula (I), a salt thereof and a pharmaceutically acceptable carrier. The present invention further provides a method for production of the pharmaceutical composition used for treating cancer.

Abstract: The present invention provides a compound of Formula (I) and a salt thereof, wherein, m is an integer of 2 to 7, and R is independently at least one selected from the group consisting of hydrogen and C1-C20 alkyl. The compound promotes apoptosis in cancer cell and inhibits its growth. The present invention also provides a pharmaceutical composition which comprises the compound of Formula (I), a salt thereof and a pharmaceutically acceptable carrier. The present invention further provides a method for production of the pharmaceutical composition used for treating cancer.

Abstract: The present invention is a printed circuit board having cooling means incorporated therein, which is coordinated with a fan. The fan comprises a frame, a stator, a rotator and a circuit board. The circuit board comprises at least one electronic component, a control IC and a heat discharge region. The heat discharge region comprises two heat dissipation areas with a plurality of holes; and the control IC is at a position corresponding to the heat discharge region. Accordingly, the circuit board can be ventilated and its heat-transfer structure can be destroyed to further obtain a better heat discharge so that the work efficiency of the control IC can be improved.

Abstract: The present invention is a printed circuit board having cooling means incorporated therein, which is coordinated with a fan. The fan comprises a frame, a stator, a rotator and a circuit board. The circuit board comprises at least one electronic component, a control IC and a heat discharge region. The heat discharge region comprises two heat dissipation areas with a plurality of holes; and the control IC is at a position corresponding to the heat discharge region. Accordingly, the circuit board can be ventilated and its heat-transfer structure can be destroyed to further obtain a better heat discharge so that the work efficiency of the control IC can be improved.