Abstract: Perovskite-polymer composites including perovskite nanocrystals dispersed in a polymer matrix, wherein the perovskite nanocrystals have an average size of from about nm to about 20 nm. Methods for producing a perovskite-polymer composites that may include contacting a solid material comprising a polymer matrix with a solution comprising a perovskite precursor; allowing the solution to penetrate the solid material to yield a swollen solid material comprising the perovskite precursor dispersed within the polymer matrix; optionally contacting the swollen solid material with an antisolvent; and annealing the swollen solid material to crystallize the perovskite precursor and to yield the perovskite-polymer composite comprising perovskite nanocrystals dispersed in the polymer matrix.

Abstract: Perovskite-polymer composites including perovskite nanocrystals dispersed in a polymer matrix, wherein the perovskite nanocrystals have an average size of from about 5 nm to about 20 nm. Methods for producing a perovskite-polymer composites that may include contacting a solid material comprising a polymer matrix with a solution comprising a perovskite precursor; allowing the solution to penetrate the solid material to yield a swollen solid material comprising the perovskite precursor dispersed within the polymer matrix; optionally contacting the swollen solid material with an antisolvent; and annealing the swollen solid material to crystallize the perovskite precursor and to yield the perovskite-polymer composite comprising perovskite nanocrystals dispersed in the polymer matrix.

Abstract: Methods of making luminescent perovskite-polymer composites are provided and structures using the same. Perovskite-polymer composites made by the method described herein are provided. The perovskite-polymer composite is useful in many applications including downconverters for backlight units (BLU) of liquid crystal displays (LCDs), as well as for and could be used for light emitting devices, lasers or as active absorber or passive luminescent concentrators for solar photovoltaic applications.

Abstract: An ultrabright bright quantum dot light-emitting diode (QLED) device and associated method of manufacture. The QLED device includes quantum dots (QD) as emitters and a mixture of metal oxide nanoparticles and alkali metal compounds for simultaneous electron injection and hole blocking to achieve charging balance at high driving current conditions. The ultrabright QLEDs are useful for many light source applications including, but not limited to display, solid state lighting, optical sensor, phototherapy, photomedicine and photobiomedicine.

Abstract: An ultrabright bright quantum dot light-emitting diode (QLED) device and associated method of manufacture. The QLED device includes quantum dots (QD) as emitters and a mixture of metal oxide nanoparticles and alkali metal compounds for simultaneous electron injection and hole blocking to achieve charging balance at high driving current conditions. The ultrabright QLEDs are useful for many light source applications including, but not limited to display, solid state lighting, optical sensor, phototherapy, photomedicine and photobiomedicine.

Abstract: Methods of making luminescent perovskite-polymer composites are provided and structures using the same. Perovskite-polymer composites made by the method described herein are provided. The perovskite-polymer composite is useful in many applications including downconverters for backlight units (BLU) of liquid crystal displays (LCDs), as well as for and could be used for light emitting devices, lasers or as active absorber or passive luminescent concentrators for solar photovoltaic applications.

Abstract: The present invention generally relates to nanotechnology and sub-microelectronic devices that can be used in circuitry, and, in particular, to nanoscale wires and other nanostructures able to encode data. One aspect of the present invention is directed to a device comprising an electrical crossbar array comprising at least two crossed wires at a cross point. In some cases, at least one of the crossed wires is a nanoscale wire, and in certain instances, at least one of the crossed wires is a nanoscale wire comprising a core and at least one shell surrounding the core. For instance, the core may comprise a crystal (e.g., crystalline silicon) and the shell may be at least partially amorphous (e.g., amorphous silicon). In certain embodiments, the cross point may exhibit intrinsic current rectification, or other electrical behaviors, and the cross point can be used as a memory device.