Abstract: Imaging sensor and imaging module are provided. The imaging sensor includes: a substrate; multiple pixel units disposed on the substrate, configured to acquire an optical signal carrying imaging information and convert the optical signal into an electric pixel signal, and arranged in array to form a pixel array; multiple bias voltage pseudo pixel units disposed around the pixel array, connected with the pixel units, and configured to provide a bias voltage to the pixel units; and at least one touch sensing pseudo pixel unit disposed at one side of the bias voltage pseudo pixel units which is away from the pixel units, and configured to form a capacitor structure to sense a touch to form an electric touch signal. Color aberration between the bias voltage pseudo pixel units and the touch sensing pseudo pixel unit and the pixel units is reduced, and appearance of the imaging sensor is improved.

Abstract: Imaging sensor and imaging module are provided. The imaging sensor includes: a substrate; multiple pixel units disposed on the substrate, configured to acquire an optical signal carrying imaging information and convert the optical signal into an electric pixel signal, and arranged in array to form a pixel array; multiple bias voltage pseudo pixel units disposed around the pixel array, connected with the pixel units, and configured to provide a bias voltage to the pixel units; and at least one touch sensing pseudo pixel unit disposed at one side of the bias voltage pseudo pixel units which is away from the pixel units, and configured to form a capacitor structure to sense a touch to form an electric touch signal. Color aberration between the bias voltage pseudo pixel units and the touch sensing pseudo pixel unit and the pixel units is reduced, and appearance of the imaging sensor is improved.

Abstract: A fingerprint imaging system and a method for forming the same. The system includes: a backlight system; a sensor array on the backlight system, wherein the sensor array comprises a plurality of photodiodes and a plurality of light transmission regions between adjacent photodiodes; and an anti-light-scattering layer formed on the sensor array, wherein the anti-light-scattering layer comprises a plurality of first portions and a plurality of second portions disposed between adjacent first portions, wherein the plurality of first portions cover at least the plurality of photodiodes respectively, and refractivity of the plurality of first portions is greater than refractivity of the plurality of second portions.

Abstract: A fingerprint imaging system and a method for forming the same. The system includes: a backlight system; a sensor array on the backlight system, wherein the sensor array comprises a plurality of photodiodes and a plurality of light transmission regions between adjacent photodiodes; and an anti-light-scattering layer formed on the sensor array, wherein the anti-light-scattering layer comprises a plurality of first portions and a plurality of second portions disposed between adjacent first portions, wherein the plurality of first portions cover at least the plurality of photodiodes respectively, and refractivity of the plurality of first portions is greater than refractivity of the plurality of second portions.

Abstract: An amorphous silicon gate driving circuit includes multiple cascaded shift registers. Each of the shift registers includes a shift register unit, which contains multiple TFTs and multiple capacitors, an N-th output terminal GN, an (N+1)-th output terminal GN+1, a high voltage signal terminal Vgh and a low voltage signal terminal Vgl; and an output control unit having an N-th additional output terminal. The output control unit is configured to control a time period during which the N-th additional output terminal outputs a high voltage level to be within a time period during which the N-th output terminal outputs the high voltage level, where a signal falling edge for turning off TFTs at a former one of two adjacent rows of pixel units is completely separated from a signal rising edge for turning on TFTs at a latter one.

Abstract: An amorphous silicon gate driving circuit includes multiple cascaded shift registers. Each of the shift registers includes a shift register unit, which contains multiple TFTs and multiple capacitors, an N-th output terminal GN, an (N+1)-th output terminal GN+1, a high voltage signal terminal Vgh and a low voltage signal terminal Vgl; and an output control unit having an N-th additional output terminal. The output control unit is configured to control a time period during which the N-th additional output terminal outputs a high voltage level to be within a time period during which the N-th output terminal outputs the high voltage level, where a signal falling edge for turning off TFTs at a former one of two adjacent rows of pixel units is completely separated from a signal rising edge for turning on TFTs at a latter one.