Patents by Inventor Yajing YUAN

Yajing YUAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radiation-hardened memory storage unit
    Patent number: 8995162
    Abstract: A radiation-hardened memory storage unit that is resistant to total ionizing done effects, the unit including PMOS transistors.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: March 31, 2015
    Assignee: Huazhong University of Science and Technology
    Inventors: Hongshi Sang, Wen Wang, Tianxu Zhang, Chaobing Liang, Jing Zhang, Yang Xie, Yajing Yuan
  • Radiation-hardened storage unit
    Patent number: 8988922
    Abstract: A radiation-hardened storage unit, including a basic storage unit, a redundant storage unit, and a two-way feedback unit. The basic storage unit includes a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, and a fourth PMOS transistor. The first PMOS transistor and the second PMOS transistor are read-out access transistors. The third PMOS transistor and the fourth PMOS transistor are write-in access transistors. The redundant storage unit includes a fifth PMOS transistor, a sixth PMOS transistor, a seventh PMOS transistor, and an eighth PMOS transistor. The fifth PMOS transistor and the sixth PMOS transistor are read-out access transistors. The seventh PMOS transistor and the eighth PMOS transistor are write-in access transistors. The two-way feedback unit is configured to form a feedback path between the storage node and the redundant storage node.
    Type: Grant
    Filed: December 30, 2013
    Date of Patent: March 24, 2015
    Assignee: Huazhong University of Science and Technology
    Inventors: Hongshi Sang, Wen Wang, Tianxu Zhang, Chaobing Liang, Jing Zhang, Yang Xie, Yajing Yuan
  • RADIATION-HARDENED STORAGE UNIT
    Publication number: 20150062995
    Abstract: A radiation-hardened storage unit, including a basic storage unit, a redundant storage unit, and a two-way feedback unit. The basic storage unit includes a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, and a fourth PMOS transistor. The first PMOS transistor and the second PMOS transistor are read-out access transistors. The third PMOS transistor and the fourth PMOS transistor are write-in access transistors. The redundant storage unit includes a fifth PMOS transistor, a sixth PMOS transistor, a seventh PMOS transistor, and an eighth PMOS transistor. The fifth PMOS transistor and the sixth PMOS transistor are read-out access transistors. The seventh PMOS transistor and the eighth PMOS transistor are write-in access transistors. The two-way feedback unit is configured to form a feedback path between the storage node and the redundant storage node.
    Type: Application
    Filed: December 30, 2013
    Publication date: March 5, 2015
    Applicant: Huazhong University of Science and Technology
    Inventors: Hongshi SANG, Wen WANG, Tianxu ZHANG, Chaobing LIANG, Jing ZHANG, Yang XIE, Yajing YUAN
  • RADIATION-HARDENED MEMORY STORAGE UNIT
    Publication number: 20150062994
    Abstract: A radiation-hardened memory storage unit that is resistant to total ionizing done effects, the unit including PMOS transistors.
    Type: Application
    Filed: December 20, 2013
    Publication date: March 5, 2015
    Applicant: Huazhong University of Science and Technology
    Inventors: Hongshi SANG, Wen WANG, Tianxu ZHANG, Chaobing LIANG, Jing ZHANG, Yang XIE, Yajing YUAN