Abstract: An excitonic device includes a substrate and nanowires coupled to the substrate. Electrons and holes are spatially confined within an active region of each nanowire. The nanowires are operable for electroluminescent emission originating from excitons comprising bound states of electrons and holes in the active region of each nanowire.

Abstract: Light emitting nanowire devices, in accordance with aspects of the present technology, can include a short period superlattice (SPSL) region underlaying an N-polar multiple quantum well (MQW) region. The short period superlattice (SPSL) region can relax strain in the multiple quantum well (MQW) region. The nanowires can be submicron scale and characterized by red electroluminescence.

Abstract: A method for fabricating a light emitting diode (LED) device includes forming a nitrogen-polar (N-polar) template on a substrate, growing a first N-polar, III-nitride semiconductor segment of a nanostructure, growing a N-polar active region of the nanostructure, the N-polar active region being supported by the first N-polar, III-nitride semiconductor segment, the N-polar active region including a ternary or quaternary III-nitride semiconductor material, and growing a second N-polar, III-nitride semiconductor segment of the nanostructure, the second N-polar segment being supported by the N-polar active region.

Abstract: In accordance with aspects of the present technology, a unique charge carrier transfer process from c-plane InGaN to semipolar-plane InGaN formed spontaneously in nanowire heterostructures can effectively reduce the instantaneous charge carrier density in the active region, thereby leading to significantly enhanced emission efficiency in the deep red wavelength. Furthermore, the total built-in electric field can be reduced to a few kV/cm by cancelling the piezoelectric polarization with spontaneous polarization in strain-relaxed high indium composition InGaN/GaN heterostructures. An ultra-stable red emission color can be achieved in InGaN over four orders of magnitude of excitation power range. Accordingly, aspects of the present technology advantageously provide a method for addressing some of the fundamental issues in light-emitting devices and advantageously enables the design of high efficiency and high stability optoelectronic devices.

Abstract: Monolithic integration of multicolor light-emitting diodes with highly spatially uniform emission wavelength are realized in a single selective area epitaxy process. Pronounced emission peaks with very narrow spectral linewidths are also achieved. The indium contents and emission colors are tuned by precisely controlling the nanowire emitter diameter and lattice constant. The emission wavelengths exhibit small variations of only a few nanometers among individual nanowire emitters over an areal region.

Abstract: Nanowire light emitting diodes (LEDs) are operable for spontaneous emission of light at significantly reduced current densities and with very narrow linewidths relative to conventional LEDs.

Abstract: In various embodiments, the present disclosure includes a nitrogen-polar (N-polar) nanowire that includes an indium gallium nitride (InGaN) quantum well formed by selective area growth. It is noted that the N-polar nanowire is operable for emitting light.