Abstract: A hard X-ray grating phase-contrast imaging apparatus with large field-of-view, high contrast and low dose and the method thereof. The apparatus includes a source emitter (31), a source grating (G0), a beam splitting grating (G1), an analyzer grating (G2) and a detector (32) arranged in sequence on a transmission path of the source emitter (31). The beam splitting grating (G1) has a period of 30 to 50 ?m and a depth to width ratio not greater than 20. The apparatus can provide a high image contrast and a low radiation dose and realize a phase-contrast imaging with high energy and a large field-of-view by increasing the grating period, increasing a duty cycle of the beam splitting grating while increasing the distance between an object and the analyzer grating. The apparatus can also utilize the conventional polychromatic X-ray sources and available process for manufacturing gratings, and be suitable for clinical use.

Abstract: A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling.

Abstract: A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling.

Abstract: A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling.

Abstract: The present invention provides an electro-optic ceramic material including lead, magnesium, niobium and titanium having a propagation loss of less than about 3 dB/cm and a quadratic electro-optic coefficient of greater than about 2×10?16 m2/V2 at 20° C. at a wavelength of 1550 nm. The present invention also provides electro-optic devices including an electro-optic ceramic material including lead, magnesium, niobium and titanium having a propagation loss of less than about 3 dB/cm and a quadratic electro-optic coefficient of greater than about 2×10?16 m2/V2 at 20° C. at a wavelength of 1550 nm. The materials and devices of the present invention are useful in optical communications applications such as intensity and phase modulation, switching, and polarization control.

Abstract: The present invention provides an electro-optic ceramic material including lead, magnesium, niobium and titanium having a propagation loss of less than about 3 dB/cm and a quadratic electro-optic coefficient of greater than about 2×10?16 m2/V2 at 20° C. at a wavelength of 1550 nm. The present invention also provides electro-optic devices including an electro-optic ceramic material including lead, magnesium, niobium and titanium having a propagation loss of less than about 3 dB/cm and a quadratic electro-optic coefficient of greater than about 2×10?16 m2/V2 at 20° C. at a wavelength of 1550 nm. The materials and devices of the present invention are useful in optical communications applications such as intensity and phase modulation, switching, and polarization control.