Abstract: To obtain a high intensity, high definition and sophisticated electrooptic display device unit such as transmissive type LCD, a semi-transmissive type LCD, a reflective type LCD, a surface emitter type organic EL, or an underside emitter type organic EL, etc. which has high electron and positive hole mobility and low leak electric current qualities. A porous semiconductor layer (low porous Si layer 11a/high porous Si layer 11b/low porous Si layer 11c), a monocrystalline Si layer12a, and the Si O2 layer 13a are formed on a monocrystalline Si substrate 10. The Si O2 layer 13a of the peripheral circuit area is removed, leaving the Si O2 layer 13a in the display area. The poly Si layer 14a is formed in the display area by semiconductor epitaxial growth, and a monocrystalline Si layer 12b is formed in the peripheral circuit area.

Abstract: To obtain a high intensity, high definition and sophisticated electrooptic display device unit such as LCD or EL, which has high electron and positive hole mobility and low leak electric current qualities. A porous semiconductor layer, a monocrystalline Si layer, and a SiO2 layer are formed on a monocrystalline Si substrate. The SiO2 layer of the peripheral circuit area is removed, leaving the SiO2 layer in the display area. A poly Si layer is formed in the display area by epitaxial growth, and a monocrystalline Si layer is formed in the peripheral circuit area. Then, the display element section is formed in the display area and the peripheral circuitry section is formed in the peripheral circuit area. The assembly is then divided and packaged into ultra slim electrooptic display device units.

Abstract: To obtain a high intensity, high definition and sophisticated electrooptic display device unit such as transmissive type LCD, a semi-transmissive type LCD, a reflective type LCD, a surface emitter type organic EL, or an underside emitter type organic EL, etc. which has high electron and positive hole mobility and low leak electric current qualities.